DSA2IH00214261.pdf

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Partial File Text TYPE 3N161 P-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT TRANSISTOR B U L L E T IN N O . O L -S 7 31 1298. F E B R U A R Y 19 7 0 - R E V IS E D M A R C H 1973 D IO D E -P R O T E C T E D
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