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    DSAZIHA100020370.pdf

    • American Microsemiconductor
    • GME0404-2 Transistors Si PNP LP HF BJT Military/High-RelN V(BR)CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50nØ×
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