DSAZIHA100025070.pdf
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American Microsemiconductor
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2SD1906 Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)80
V(BR)CBO (V)90
I(C) Max. (A)5.0
Absolute Max. Power Diss. (W)30
Maximum Operating Temp (øC)150õ
I(CBO) Max. (A)100uÃ
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Original
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