DSA00763706.pdf
-
Toshiba
-
CUS08F30
Schottky Barrier Diode Silicon Epitaxial
CUS08F30
1. Applications
ยท High-Speed Switching
2. Features
(1) (2) Low forward voltage: VF(3) = 0.40 V (typ.) General-purpose USC package,
-
Original
-
Part pricing, stock, data attributes from Findchips.com
Findchips