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    DSA00257177.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET TIM8596-15 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=42.0dBm at 8.5GHz to 9.6GHz n HIG
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    DSA00257177.pdf preview Download Datasheet

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