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    DSA2IH00202641.pdf

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    • TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE GT20D101 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage : Vc e s =250V (MIN.) 20.5MAX ¿3.3 ¿0.2 . Hi
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    DSA2IH00202641.pdf preview Download Datasheet

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    2-21F1C GT20D101
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