DSAZIHA100024012.pdf
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American Microsemiconductor
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1814-3001 Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)300ö
V(BR)CBO (V)325
I(C) Max. (A)10
Absolute Max. Power Diss. (W)44
Maximum Operating Temp (øC)140õ
I(CBO) Max. (A)
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Original
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