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    DSA00187192.pdf

    • Chino-Excel Technology
    • CEM4410A March 1998 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 10A , RDS(ON)=11m RDS(ON)=20m @VGS=10V. @VGS=4.5V. D Super high dense cell design for extrem
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