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    DASF0045414.pdf

    • Renesas Technology
    • RQA0010VXDQS Silicon N-Channel MOS FET REJ03G1692-0200 Rev.2.00 Oct 29, 2008 Features ยท High output power, High gain, High efficiency Pout = +31.8 dBm, Linear Gain = 20 dB, PAE = 60% (f = 45
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