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    DSAISS00092699.pdf

    • Toshiba
    • MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT (Insulated-Gate Bipolar Transistor) power devices for power transformers and variable-speed motor
    • Original
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    DSAISS00092699.pdf preview Download Datasheet

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