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    DSA00484541.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET TIM1414-10LA-252 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=5.5dB at 13.75G
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