DSA2IH00126019.pdf

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Partial File Text PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, V ce = 2 V, Ic = 3 mA HIGH GAIN: IS21 EI2 = 8.5 dB TYP at f = 2 GHz, Vce = 2 V,
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