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    DSA00477442.pdf

    • Central Semiconductor
    • PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area
    • Original
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    DSA00477442.pdf preview Download Datasheet

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