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DSA00477442.pdf
Manufacturer
Central Semiconductor
Partial File Text
PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area
Type
Original
Part Details
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DIODE CHIP 1N4148
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