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    DSA00361130.pdf

    • Toshiba
    • 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Rati
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    DSA00361130.pdf preview Download Datasheet

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