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    DSAZIHA100059995.pdf

    • American Microsemiconductor
    • 1N3832 Thyristors Four-Layer (Shockley) Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max.
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