DSAZIHA100053847.pdf
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American Microsemiconductor
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410 Thyristors
Four-Layer (Shockley) Diode
V(BO) Min. (V)80
V(BO) Max. (V)120
I(S) Max. (A)500u
I(TRM) Max. (A)
@ t(w) (s) (Test Condition)
I(TSM) Max. (A)50
V(R) Max. (V)60
I(H) Max. (A) Hol
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Original
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