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    DSA00501060.pdf

    • Toshiba
    • 1SS406 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5µA (max)
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    DSA00501060.pdf preview Download Datasheet

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