DSAZIHA100022307.pdf
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American Microsemiconductor
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IRFN250 Transistors
N-Channel Enhancement MOSFET
Military/High-RelN
V(BR)DSS (V)200
V(BR)GSS (V)20
I(D) Max. (A)22
I(DM) Max. (A) Pulsed I(D)14
@Temp (øC)100#
IDM Max (@25øC Amb)88
@Pulse W
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Original
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