DSAZIHA100059994.pdf
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American Microsemiconductor
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1N3490 Thyristors
Four-Layer (Shockley) Diode
V(BO) Min. (V)16
V(BO) Max. (V)24
I(S) Max. (A)125u
I(TRM) Max. (A)10
@ t(w) (s) (Test Condition)10u
I(TSM) Max. (A)10
V(R) Max. (V)12
I(H) Max.
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Original
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