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    DSAIHSC00045888.pdf

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    • P-CHANNEL POWER MOSFETS IRF9530/9531 FEATURES TO-220 • Lower R d s < ) on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lo
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    • IRF9530N IRF9530N IRF9530NPBF IRF9530PBF IRF9530NPBF

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