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DSA0065180.pdf
Manufacturer
Cree
Partial File Text
CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general pu
Type
Original
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cgh40006p
CGH40006P-TB
Cree Microwave
RO5880
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