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    DSAZIHA100017431.pdf

    • American Microsemiconductor
    • 2N1104 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)35 V(BR)CBO (V)45 I(C) Max. (A)20m Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)1.0u
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