DSAZIHA100017431.pdf
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American Microsemiconductor
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2N1104 Transistors
Si NPN Lo-Pwr BJT
Military/High-RelN
V(BR)CEO (V)35
V(BR)CBO (V)45
I(C) Max. (A)20m
Absolute Max. Power Diss. (W)125m
Maximum Operating Temp (øC)150þ
I(CBO) Max. (A)1.0u
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Original
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