DSA2IH00206529.pdf

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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz · High gain - G-|dB = 6.0 dB at 10.7 GHz to 11.7 GHz
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