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    DSA2IH00180732.pdf

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    • SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fm jn = 1.4 dB @ 4 G H z) * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted pla
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