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    Scans-009427.pdf

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    • 711GÖ2b DDb7S31 Ö33 «RHIN BF960 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for use in
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    BF-960 BF960 transistor BF960 transistor BG 20
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