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    DSAEDA00068497.pdf

    • Fujitsu
    • FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm (Typ.) High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliabilit
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