The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

pdf of bel 187 transistor Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TD BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS LED 2 11 YELLOW , 'PROPRIETARY1 TD BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED OR DISCLDSED VITHDUT THE WRITTEN APPROVAL OF , WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS SUGGESTED PANEL OPENING 2 0 D2 /9 5 /EC. THE , PAGE : 2 & bel cotrauam^A FLANETÌ CONNECTED This document is electronically generated. This is


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PDF 350fj 65MHz 100MHz 125MHz 5MHz-40MHz 40MHzOTTOM) 0875-1K2T-B2 08751K2TB2PA
Thyristor pulse transformer

Abstract: S3-6V GR-1089-CORE P0080SC P0640SC PE-65968
Text: has all the information necessary for a designer to build a network interface circuit for a piece of , interface is the part of the system that connects to other telecommunications equipment through coaxial , line cross events. The application note begins with a general overview of the protected network interface and a listing of the various specification test procedures. This is followed by an example circuit for metallic protection along with the component selection guide. Because the outer conductor of


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PDF com/an398 DS3150: DS3151: DS3152: DS3153: DS3154: AN398, APP398, Appnote398, Thyristor pulse transformer S3-6V GR-1089-CORE P0080SC P0640SC PE-65968
t3047

Abstract: TG83-S006NU "coev magnetics" APP351 DS21348 DS32502 SM01-T304M TX1320 DS2149 DS2148
Text: , secondary winding, isolation voltage, Pulse Engineering, Halo Electronics, Bel Fuse, Coev Magnetics, Tyco , the integrity of the PCB design and other termination circuitry and should be verified by the , Table 3. Transformer Part Information Vendor Part Turns Ratio No. of Ports Package Type No. of Pins Temp Range Hierarchy Maxim Device Pulse PE-65388 PE-65586 1:1.15CT , 1:2CT TD070206NE Surface Mount Bel S553-3855- 1:1.15CT and 02 1CT:2CT S553-0013- 1


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PDF DS3150: DS3151: DS3152: DS3153: DS3154: DS3181: DS3182: DS3183: DS3184: AN351, t3047 TG83-S006NU "coev magnetics" APP351 DS21348 DS32502 SM01-T304M TX1320 DS2149 DS2148
2003 - a1757

Abstract: A1797
Text: 2 − 4.5 V ∆VGS gate-source voltage difference of both transistor sections ID , = 10 V 5 7.5 − S gfs1/gfs2 forward transconductance ratio of both transistor , power MOS transistor BLF368 List of components class-AB test circuit (see Figs 12 and 13 , DISCRETE SEMICONDUCTORS DAT M3D091 BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of 1998 Jul 29 2003 Sep 26 Philips Semiconductors Product specification


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PDF M3D091 BLF368 OT262A1 SCA75 613524/04/pp18 a1757 A1797
2003 - BLF368

Abstract: MGP231 a 1757 transistor
Text: specification VHF push-pull power MOS transistor BLF368 List of components class-AB test circuit (see , DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of 1998 Jul 29 2003 Sep 26 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF368 PIN CONFIGURATION · High power , silicon N-channel enhancement mode vertical D-MOS transistor , designed for broadcast transmitter


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PDF M3D091 BLF368 OT262A1 SCA75 613524/04/pp18 BLF368 MGP231 a 1757 transistor
Not Available

Abstract: No abstract text available
Text: PAGE : 3 THE! [NFORMftTXÜN IIN M JIE JI HEREIN JS CENTERED 'PRDPRJETARli' TO BEL FUSE INC, AND SHALL NÜT BE cnpjEp, r e p r o d u c e or u js c l o s p w m -Q /r the: WRITTEN APPROVAL OF BEL , THE WRITTEN APPROVAL DF BEL FUSE INC, MECHANICAL SPECIFICATION RECOMMENDED PCB FD0TPRINT , "to STANDARD PDf . TOL. IN INCH X ■XX «,0 0 4 XXX a controlled ooçy Ff used Internally


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PDF C0-70 65MHz 100MHz 125MHz DC002( 0323QS L8e9-1GX1-91 L8291GX191A
2001 - transistor bel 187

Abstract: of bel 187 transistor bel 187 transistor configuration bel 187 transistor BEL 187 transistor current gain 2N3906BU fairchild 2N3906BU 2N3906 2N3906RA pnp transistor 2n 3906
Text: TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON , TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and , general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Absolute , *These ratings are limiting values above which the serviceability of any semiconductor device may be


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PDF 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 O-92-3 transistor bel 187 of bel 187 transistor bel 187 transistor configuration bel 187 transistor BEL 187 transistor current gain 2N3906BU fairchild 2N3906BU 2N3906RA pnp transistor 2n 3906
Telefuse

Abstract: GR-1089-CORE GR-1089 F1251T DS2148 DS21354 DS21352 DS21348 B1250T AN405
Text: from Bel Fuse (SMP 1.25) or the Bourns Telefuse B1250T. Both of these fuses are surface mount, have , either of two scenarios for second level GR-1089/UL 60950: fuse opens quickly, or fuse doesn't open at , of T1/E1 products do not want a technician dispatched, it may be necessary to modify the circuit , minimum trace width of at least 25 mils (assuming minimum trace thickness of 1oz/ft²), and traces should , be taken when routing ground planes since 4.4A must be conducted when one ground trace of 2.2 A is


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PDF GR-1089, GR-1089/UL DS2148: DS2152: DS2154: DS2155: DS21552: DS21554: DS2156: DS21Q348: Telefuse GR-1089-CORE GR-1089 F1251T DS2148 DS21354 DS21352 DS21348 B1250T AN405
2001 - 2N5088 Cross Reference

Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Text: : Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER , BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data , Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of


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PDF 2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 2N5088 Cross Reference 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
2001 - SOT-23 MARK 2Q

Abstract: BF254 sot-23 transistor p2 marking
Text: : Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER , BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data , *These ratings are limiting values above which the serviceability of any semiconductor device may be


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PDF 2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 2N5087BU SOT-23 MARK 2Q BF254 sot-23 transistor p2 marking
2001 - MC79M12

Abstract: No abstract text available
Text: Internal short circuit current limiting Output transistor safe area compensation Output voltages of -5V,-6V , of 0.5A Internal thermal overload Internal short circuit current limiting Output transistor safe area , Output transistor safe area compensation Output voltages of -5V, -6V, -8V, -12V, -15V,-18V and -24V , circuit current limiting Output transistor safe area compensation Output voltages of -5V, -6V, -8V, -12V , of 0.5A Internal thermal overload Internal short circuit current limiting Output transistor safe area


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PDF MC79MXX -18Vand MC79MXX O-220 MC79M24CTBU MC79M24CT O-220 MC79M24 MC79M12
2004 - AN-067

Abstract: capacitor 47pf 200v ECJ1VB1H102K thermistor 100k ohm thermistor 100k AN067 NOTE-AN067 EAN-103965 EVM7-JSX30BY2 30w amplifier
Text: supplied to the transistor is required. See Figure 2 for a generalized block diagram of an LDMOS Class AB , across temperature. An Excel spreadsheet with a model of this bias circuit is included within this PDF , (IDQ) of a Class AB LDMOS amplifier is primarily a function of gate to source voltage (VGS) and , Figure 1. Amplifier IDQ as a Function of Baseplate Temperature Amplifier gain and efficiency tend to , responsibility for the use of this information, and all such information shall be entirely at the user's own risk


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PDF NOTE--AN067 LM3480 EAN-103965 AN-067 capacitor 47pf 200v ECJ1VB1H102K thermistor 100k ohm thermistor 100k AN067 NOTE-AN067 EVM7-JSX30BY2 30w amplifier
World transistors

Abstract: World transistors and ic DATA ACQUISITION SEMINAR Data Acquisition "Data Acquisition" SCHEMATIC circuit scr oscillator world products snr INTEL 1980 Crystal Applications Seminar Tour
Text: 's Law - Transistor density increases 4X every 3 years - Most (95 %) of the added transistors are , areas of technology and design, so too are we FIRST is our innovative approach to Technical Product , design. And we are set the standard for providing Schematic and Layout review of our customers end products. The process is simple and easy to use. Just call us and talk to one of our helpful Applications Engineers, fax or send us your documentation, and receive a quick and useful analysis of your design. It


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PDF
2000 - SCADA complete notes

Abstract: 3 wire pt100 sensor wiring diagram Voltage-to-Current 4-20mA rtd pt100 4-20ma wiring diagram pt100 amplifier circuit diagram pt100 active bridge IC 324 so14 PT100 temperature sensor datasheet
Text: "OverScale Current vs Temperature." EXTERNAL TRANSISTOR Transistor Q1 conducts the majority of the signal-dependent 4-20mA loop current. Using an external transistor isolates the majority of the power dissipation , be configured for a wide range of temperature or pressure measurements. Total unadjusted error of the , transistor , unless otherwise noted. XTR105P, U PARAMETER OUTPUT Output Current Equation Output Current , Specification same as XTR105P, XTR105U. NOTES: (1) Describes accuracy of the 4mA low-scale offset current. Does


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PDF XTR105 com/databook/XTR105 4-20mA 30nAp-p 110dB Pt100 14-PIN SO-14 XTR105P SCADA complete notes 3 wire pt100 sensor wiring diagram Voltage-to-Current 4-20mA rtd pt100 4-20ma wiring diagram pt100 amplifier circuit diagram pt100 active bridge IC 324 so14 PT100 temperature sensor datasheet
2001 - LM7805 TO252

Abstract: MC7815 TO-220 MC7812 lm7805 dpak TRANSISTOR MC7812CT LM7805 DPAK 2 mc7805 TO-252 MC78XX mc7806 regulator mc7808
Text: Features · · · · · Output Current up to 1A Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24V Thermal Overload Protection Short Circuit Protection Output Transistor Safe Operating Area Protection Description The MC78XX/LM78XX/MC78XXA series of three terminal positive regulators are available in the TO-220/D-PAK package and with several fixed output voltages, making them useful in a wide range of applications , . 17.3 17.1 53 =+25 oC Typ. Max. 18 18 15 5 15 5.0 5.2 -1 110 69 2 22 250 2.2 18.7 18.9 360 180 360 180


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PDF MC78XX/LM78XX/MC78XXA MC78XX/LM78XX/MC78XXA O-220/D-PAK MC7815A MC7815ACT MC7815ACTBU O-220 O-220 LM7805 TO252 MC7815 TO-220 MC7812 lm7805 dpak TRANSISTOR MC7812CT LM7805 DPAK 2 mc7805 TO-252 MC78XX mc7806 regulator mc7808
2007 - B048F240M30

Abstract: D496 D505
Text: as an independent 19.0 ­ 26.5 V source. Due to the fast response time and low noise of the BCM, the , eliminated-resulting in savings of board area, materials and total system cost. The BCM achieves a power density of , 125 B048F240T30 Rev. 2.1 Page 1 of 12 Specifications V·I Chip Bus Converter Module , Module B048F240T30 Rev. 2.1 Page 2 of 12 Specifications (continued) V·I Chip Bus , Input turn-on PC enable Output turn-on delay From application of power From release of PC pin 5


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PDF B048F240T30 B048F240M30 B048F240M30 D496 D505
2007 - Not Available

Abstract: No abstract text available
Text: response time and low noise of the BCM, the need for limited life aluminum electrolytic or tantalum capacitors at the load is reduced-or eliminated-resulting in savings of board area, materials and total system cost. The BCM achieves a current density of 311 A/in3 in a V·I Chip package compatible with , 800-735-6200 V·I Chip Bus Converter Module B048F015T14 Rev. 1.4 Page 1 of 12 PRELIMINARY , Rev. 1.4 Page 2 of 12 PRELIMINARY Specifications (continued) V·I Chip Bus Converter Module


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PDF B048F015T14
2008 - Not Available

Abstract: No abstract text available
Text: response time and low noise of the BCM, the need for limited life aluminum electrolytic or tantalum capacitors at the load is reduced-or eliminated-resulting in savings of board area, materials and total system cost. The BCM achieves a power density of 1036 W/in3 in a V·I Chip package compatible with , Bus Converter Module B048F120T30 Rev. 2.4 Page 1 of 12 Specifications Input (Conditions , vicorpower.com 800-735-6200 V·I Chip Bus Converter Module B048F120T30 Rev. 2.4 Page 2 of 12


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PDF B048F120T30 B048F120M30 B048F120T30
2008 - Not Available

Abstract: No abstract text available
Text: response time and low noise of the BCM, the need for limited life aluminum electrolytic or tantalum capacitors at the load is reduced-or eliminated-resulting in savings of board area, materials and total system cost. The BCM achieves a power density of 829 W/in3 in a V·I Chip package compatible with standard , Module B048F096T24 Rev. 4.4 Page 1 of 12 Specifications Input (Conditions are at 48 Vin, full , V·I Chip Bus Converter Module B048F096T24 Rev. 4.4 Page 2 of 12 Specifications


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PDF B048F096T24 B048F096M24 B048F096T24
2008 - Not Available

Abstract: No abstract text available
Text: response time and low noise of the BCM, the need for limited life aluminum electrolytic or tantalum capacitors at the load is reduced-or eliminated-resulting in savings of board area, materials and total system cost. The BCM achieves a current density of 173 A/in3 in a V·I Chip package compatible with , Module B048F040T20 Rev. 2.4 Page 1 of 12 Specifications Input (Conditions are at 48 Vin, full , V·I Chip Bus Converter Module B048F040T20 Rev. 2.4 Page 2 of 12 Specifications


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PDF B048F040T20 B048F040M20 B048F040T20
2008 - Not Available

Abstract: No abstract text available
Text: . Due to the fast response time and low noise of the BCM, the need for limited life aluminum electrolytic or tantalum capacitors at the input of POL converters is reduced-or eliminated-resulting in savings of board area, materials and total system cost. The BCM achieves a power density of 1036 W/in3 in , Rev. 2.0 Page 1 of 12 Specifications Input (Conditions are at 384 Vin, full load, and 25 , Bus Converter Module B384F120T30 Rev. 2.0 Page 2 of 12 Specifications (continued) V·I


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PDF B384F120T30
2008 - Not Available

Abstract: No abstract text available
Text: fast response time and low noise of the BCM, the need for limited life aluminum electrolytic or tantalum capacitors at the load is reduced-or eliminated-resulting in savings of board area, materials and total system cost. The BCM achieves a power density of 1036 W/in3 in a V·I Chip package compatible , V·I Chip Bus Converter Module B048F480T30 Rev. 2.8 Page 1 of 12 Specifications Input , vicorpower.com 800-735-6200 V·I Chip Bus Converter Module B048F480T30 Rev. 2.8 Page 2 of 12


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PDF B048F480T30 B048F480M30 B048F480T30
2008 - Not Available

Abstract: No abstract text available
Text: response time and low noise of the BCM, the need for limited life aluminum electrolytic or tantalum capacitors at the load is reduced-or eliminated-resulting in savings of board area, materials and total system cost. The BCM achieves a power density of 829 W/in3 in a V·I Chip package compatible with standard , Module B048F080T24 Rev. 2.0 Page 1 of 12 Specifications Input (Conditions are at 48 Vin, full , V·I Chip Bus Converter Module B048F080T24 Rev. 2.0 Page 2 of 12 Specifications


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PDF B048F080T24 B048F080M24 B048F080T24
2008 - Not Available

Abstract: No abstract text available
Text: fast response time and low noise of the BCM, the need for limited life aluminum electrolytic or tantalum capacitors at the load is reduced—or eliminated—resulting in savings of board area, materials and total system cost. The BCM achieves a current density of 242 A/in3 in a V•I Chip package , B048F030T21 Rev. 2.5 Page 1 of 12 Specifications V•I Chip Bus Converter Module Input , Rev. 2.5 Page 2 of 12 Specifications (continued) V•I Chip Bus Converter Module Output


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PDF B048F030T21 B048F030M21
2007 - 710 opto coupler

Abstract: D496 D505 W1696
Text: low noise of the BCM, the need for limited life aluminum electrolytic or tantalum capacitors at the input of POL converters is reduced-or eliminated-resulting in savings of board area, materials and total system cost. The BCM achieves a power density of 1036 W/in3 in a V·I Chip package compatible , B352F110T30 Rev. 1.9 Page 1 of 12 Specifications V·I Chip Bus Converter Module Input (Conditions , Converter Module B352F110T30 Rev. 1.9 Page 2 of 12 Specifications (continued) V·I Chip Bus


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PDF B352F110T30 710 opto coupler D496 D505 W1696
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