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LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LTC1177CSW Linear Technology IC BUF OR INV BASED MOSFET DRIVER, PDSO18, 0.300 INCH, PLASTIC, SO-18, MOSFET Driver
LTC4444-5IMS8E#PBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver

paralleling mosfet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - Not Available

Abstract: No abstract text available
Text: (NPC) inverter topology. Finally a special topology for paralleling MOSFET with IGBT is introduced to , circuit  Parallel Switch: This is the paralleling of a fast component (e.g. MOSFET ) and a , original idea of paralleling MOSFET with IGBT maintained (see Figure 13). The MOSFET and the IGBT are , .  Three level topology  Paralleling of fast MOSFET or IGBT´s with components having low , paralleling of fast switching components with components with low forward voltage drop. 1 Introduction The


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2013 - Not Available

Abstract: No abstract text available
Text: paralleling MOSFET with IGBT is presented here to show how promising the prospects of this advanced new module , MOSFETs. This advanced paralleled NPC topology puts the inceptive idea of paralleling a MOSFET with an , the benefits of advanced paralleling . 2.1. Why a Three-Level Topology? (Step 1) Three-level , . Advanced Paralleling (Step 4) The goal is to bring together the benefits of standard NPC (lowest switching , component (e.g. a MOSFET ) and a component with low voltage drop (e.g. an IGBT) to create an advanced


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PDF 100kW, 100kW.
2013 - DT25N

Abstract: No abstract text available
Text: paralleling MOSFET with IGBT is presented here to show how promising the prospects of this advanced new module , idea of paralleling a MOSFET with an IGBT into action. Both the MOSFET and the IGBT are turned on , 4: Capitalized on the benefits of advanced paralleling . 2.1. Why a Three-Level Topology? (Step 1 , turn-off (RBSOA). 2.4. Advanced Paralleling (Step 4) The goal is to bring together the benefits of , ) topologies with a paralleled fast component (e.g. a MOSFET ) and a component with low voltage drop (e.g. an


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PDF 100kW, 100kW. DT25N
1998 - SKM100GB063D

Abstract: paralleling mosfet din 7985 SEMIKRON type designation the calculation of the power dissipation for the igbt and the inverse diode in circuits SKM151 mosfet base induction heat circuit high frequency welder circuit diagram semikron IGBT skm100gb063d SKM 200 CIRCUIT
Text: as the thermal compound spreads out under the mounting pressure. When paralleling MOSFET modules , Section 5. SEMITRANS® M Power MOSFET Modules Features Typical Applications Power MOSFET , charge on the gate which would destroy the MOSFET , the module in case SEMITRANS M1 is delivered with a , System 1) Power MOSFET Modules SK M 1 5 1 A 3 F R C SEMIKRON component , System New Mosfet Module Development2) SK M 120 B 020 SEMIKRON component MOS technology


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2001 - schematic diagram welding inverter

Abstract: Three phase inverter mosfet Diagram mosfet based power inverter project schematic diagram for welding inverter mosfet base induction heat circuit schematic diagram induction heating schematic diagram welding inverter control common schematic diagram welding inverter full bridge schematic diagram welding inverter control Power MosFet inverter schematic diagram
Text: ­ Paralleling Mosfets Reduction of mosfet RDSON has generated electronic applications which were , 25°C was selected. This necessitated paralleling eight 100A 100V mosfet chips for each switch , mosfet also has a six ohm gate resistor. The discrete solution is created by paralleling 6 TO3P packages , paralleling several hybrid modules. Each of the hybrid modules contained six 40A mosfet chips and 6 high , 240A circuit. Summary Mosfet characteristics are well suited to paralleling several devices to


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1999 - IBJT

Abstract: General Electric SCR Manual 6th edition AN9319 "General Electric SCR Manual" 6th Rudy Severns TA84-5 d50026 AN918 MOTOROLA AN-918 AN918 Paralleling Power MOSFETs in Switching Applications
Text: ] Paralleling Power MOSFET 's in Switching Applications, by Kim Gauen, Motorola, Application Note AN-918, 1984 , general considerations of paralleling semiconIn Application Note C + VBE IMOS RMOD g , e AN9319 We also know from measurements, the MOSFET 's temperature coefficient in the , , the MOSFET and epi-resistance voltage drop will increase with temperature, tending to increase , Powertechnics, the general considerations of paralleling semiconductor switches were presented. Some of the


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PDF AN9319 IBJT General Electric SCR Manual 6th edition AN9319 "General Electric SCR Manual" 6th Rudy Severns TA84-5 d50026 AN918 MOTOROLA AN-918 AN918 Paralleling Power MOSFETs in Switching Applications
2002 - IBJT

Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition gto 5A 500V Rudy Severns TA84-5 D50026 AN918 Paralleling Power MOSFETs in Switching Applications
Text: Magazine, December1985. [6] Paralleling Power MOSFET 's in Switching Applications, by Kim Gauen, Motorola , conduction path as two separated devices. The IGT's on-state voltage drop is composed of the MOSFET voltage , the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but , AN-7512 We also know from measurements, the MOSFET 's temperature coefficient in the epi-resistance , MOSFET and epi-resistance voltage drop will increase with temperature, tending to increase on-voltage


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2001 - transistor bt 808

Abstract: "General Electric SCR Manual" 6th General Electric SCR Manual 6th edition BT thyristor 808 IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA AN-7512 ta84
Text: Magazine, December1985. [6] Paralleling Power MOSFET 's in Switching Applications, by Kim Gauen, Motorola , composed of the MOSFET voltage drop plus the bipolar VBE drop apparently parallel by a pnp-transistor. Note that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the , Semiconductor Corporation AN-7512 We also know from measurements, the MOSFET 's temperature coefficient in , hand, the MOSFET and epi-resistance voltage drop will increase with temperature, tending to increase


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1993 - IBJT

Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA TA84-5 14v 10A mosfet
Text: , December1985. R2 [6] Paralleling Power MOSFET 's in Switching Applications, by Kim Gauen, Motorola , the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but the base-emitter junction is common to both branches. We also know from measurements, the MOSFET , on-voltage drop. On the other hand, the MOSFET and epi-resistance voltage drop will increase with , considerations of paralleling semiconductor switches were presented. Some of the important factors include the


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PDF AN9319 IBJT SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA TA84-5 14v 10A mosfet
2007 - SCHEMATIC 10kw POWER SUPPLY WITH IGBTS

Abstract: atx 500w schematic Solar Charge Controller smps MOSFET IGBT DRIVERS THEORY AND APPLICATIONS Solar Charge Controller PWM smps 500W 24V SMPS 200w circuit single output ATX SMPS ATX SMPS schematics schematic SMPS 24V
Text: .19 Use Symmetrical Layout for Paralleling MOSFETs, and Good Isolation of Gate Drive between FETs .19 , dynamic losses, which is the signature of super junction MOSFET technology where the so-called "silicon , are indicated. SJ technology may lower the on-state resistance of a power MOSFET virtually towards zero. The basic idea is to allow the current to flow from top to bottom of the MOSFET in very high , conduction compared to what is the case in a standard MOSFET structure. In the blocking state of the SJ


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PDF ED-29, SCHEMATIC 10kw POWER SUPPLY WITH IGBTS atx 500w schematic Solar Charge Controller smps MOSFET IGBT DRIVERS THEORY AND APPLICATIONS Solar Charge Controller PWM smps 500W 24V SMPS 200w circuit single output ATX SMPS ATX SMPS schematics schematic SMPS 24V
AN-941

Abstract: forsythe INT-936 IRFP150 an941
Text: unbalance between devices. Paralleling helps to reduce conduction losses and junction to case thermal resistance. AN- 941 (v.Int) PARALLELING HEXFET POWER MOSFETs (HEXFET Power MOSFET is the trademark , Application Note AN-941 Paralleling HEXFET Power MOSFETs Table of Contents Page 1. General , unbalance between devices. Paralleling helps to reduce conduction losses and junction to case thermal , , only a thermal resistance improvement will be achieved by paralleling . Paralleling to take advantage


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PDF AN-941 AN-941 forsythe INT-936 IRFP150 an941
1999 - AN918 MOTOROLA

Abstract: General Electric SCR Manual 6th edition AN-918 AN9320 AN918 Paralleling Power MOSFETs in Switching Applications Rudy Severns SCR Handbook, General electric TA84-5 1/AN918 MOTOROLA scr manual
Text: , Motorola, Phoenix, Arizona, Powertechnics Magazine, December 1985. [6] Paralleling Power MOSFET 's in , capability of the largest semiconductor device type considered and paralleling may become an attractive , 407-727-9207 | Copyright © Intersil Corporation 1999 Application Note 9320 The ease of paralleling of , by the unit cell cross section of Figure 7. Like the MOSFET , the IGT consists of many individual , MOSFET . The MOSFET supplies base current to the pnp thus the MOSFETs gate voltage controls the total


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2002 - General Electric SCR Manual 6th edition

Abstract: Siliconix Handbook "General Electric SCR Manual" 6th AN918 MOTOROLA Rudy Severns TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications Severns paralleling mosfet SCR Manual
Text: , Phoenix, Arizona, Powertechnics Magazine, December 1985. [6] Paralleling Power MOSFET 's in Switching , paralleling may become an attractive alternative. All switching power semiconductors starting with SCR's [1 , Semiconductor Corporation Application Note 7513 Rev. A1 Application Note 7513 The ease of paralleling of , section of Figure 7. Like the MOSFET , the IGT consists of many individual cells connected in parallel , n-channel IGT may be modeled as a bipolar pnp driven by an n-channel MOSFET . The MOSFET supplies base


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2001 - "General Electric SCR Manual" 6th

Abstract: motorola 7513 General Electric SCR Manual 6th edition SCR Handbook, General electric AN918 MOTOROLA AN918 Paralleling Power MOSFETs in Switching Applications Analog/NTP 7513 TA84-5 Severns Parallel operation mosfet
Text: , Motorola, Phoenix, Arizona, Powertechnics Magazine, December 1985. [6] Paralleling Power MOSFET 's in , the capability of the largest semiconductor device type considered and paralleling may become an , Semiconductor Corporation Application Note 7513 Rev. A Application Note 7513 The ease of paralleling of , section of Figure 7. Like the MOSFET , the IGT consists of many individual cells connected in parallel , n-channel IGT may be modeled as a bipolar pnp driven by an n-channel MOSFET . The MOSFET supplies base


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1200 volt mosfet

Abstract: 2028 mosfet 3532 D1D40L ic 7698 IGBT SSR transistor 2028 d2d40 0-12 v input and 12 v output 18534
Text: DC output relays feature MOSFET technology for low on-state resistance, assuring easy paralleling and , °C. Features DC Output, Low On-State Resistance Paralleling Capability for Higher Currents Surge Current 1 , Control Voltage Range (VDC) 4-32 4-32 4-32 4-32 4-32 4-32 ENCLOSURES MOSFET DC Output Relay Low , Series 1-DC 7-40 Amp; 0-500 VDC; DC Output DC output relays feature MOSFET technology for low on-state resistance, assuring easy paralleling and switching capabilities to 40 A at 100 VDC. Lower current models are


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PDF LVD75A40 LVD75A80 LVD75B40 LVD75B80 LVD75D40 LVD75C60 LVD75D80 1200 volt mosfet 2028 mosfet 3532 D1D40L ic 7698 IGBT SSR transistor 2028 d2d40 0-12 v input and 12 v output 18534
1993 - "General Electric SCR Manual" 6th

Abstract: General Electric SCR Manual 6th edition SCR Applications Handbook TA84-5 SCR Handbook, General electric AN918 MOTOROLA Rudy Severns HEXFET Power MOSFET designer manual "scr manual" AN-918
Text: , Motorola, Phoenix, Arizona, Powertechnics Magazine, December 1985. [6] Paralleling Power MOSFET 's in , considered and paralleling may become an attractive alternative. All switching power semiconductors starting , ) and operating point. The ease of paralleling of power FETs has been pointed out by many authors [6-9 , unit cell cross section of Figure 7. Like the MOSFET , the IGT consists of many individual cells , . In the steady state, the n-channel IGT may be modeled as a bipolar pnp driven by an n-channel MOSFET


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PDF AN9320 AN-918, TA84-5) "General Electric SCR Manual" 6th General Electric SCR Manual 6th edition SCR Applications Handbook TA84-5 SCR Handbook, General electric AN918 MOTOROLA Rudy Severns HEXFET Power MOSFET designer manual "scr manual" AN-918
part numbering system ic master

Abstract: PI2001 paralleling mosfet Parallel operation mosfet PI2001-EVAL1 oring mosfet controllers
Text: allows the paralleling of IC/ MOSFET chipsets for high current Active ORing. The gate drive output turns the MOSFET on in normal steady state operation, while achieving high-speed turn-off during input , discharge current Accurate MOSFET drain-to-source voltage sensing to indicate system level fault , V transients in low-side applications Master/Slave I/O for paralleling (TDFN package only) Active , . The MOSFET drain-to-source voltage is monitored to detect normal forward, excessive forward, light


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PDF PI2001 PI2001 10-Lead 160ns part numbering system ic master paralleling mosfet Parallel operation mosfet PI2001-EVAL1 oring mosfet controllers
IGBT 500V 35A

Abstract: 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit IGBT structure dodge Current tail time of IGBT
Text: MOSFET and a bipolar junction transistor combined: MOSFET ­ A voltage-controlled gate that turns the device both on and off Bipolar Transistor ­ Bipolar current ­ much lower resistance than a MOSFET ­ , p- n+ Gate n- drift region N-channel MOSFET structure Simple model: MOSFET drives , Tradeoff: Conduction vs. Switching Loss 600V, 30A IGBT 500V, 35A MOSFET APT30GT60BR APT5014B2LL , with temperature Paralleling Difficult Easy Easy Must sort on VCE(on) Optional


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PDF APT0408 IGBT 500V 35A 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit IGBT structure dodge Current tail time of IGBT
1996 - forsythe

Abstract: AN941 INT-936 how mosfets connect parallel IRFP150 IRFP150 equivalent
Text: AN- 941 (v.Int) PARALLELING HEXFET POWER MOSFETs (HEXFET Power MOSFET is the trademark for , devices. Paralleling helps to reduce conduction losses and junction to case thermal resistance. However , resistance improvement will be achieved by paralleling . Paralleling to take advantage of lower price of , paralleling guidelines on Generally speaking, voltage equality is ensured by the fact that the , inductances have to be matched. However, if the overshoot does not violate the ratings of the MOSFET , the


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1996 - forsythe

Abstract: INT-936 IRFP150 AN-941
Text: Index AN- 941 (v.Int) PARALLELING HEXFET POWER MOSFETs (HEXFET Power MOSFET is the trademark , unbalance between devices. Paralleling helps to reduce conduction losses and junction to case thermal , , only a thermal resistance improvement will be achieved by paralleling . Paralleling to take advantage , . 1. General paralleling guidelines on Generally speaking, voltage equality is ensured by , the MOSFET , the differential in the turn-off losses is negligible The impact of the common emitter


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Severns

Abstract: Oscillation mosfet zener diode capacitance POWER MOSFET APPLICATION NOTE ED31 diode parallel connection of MOSFETs R. Severns "Controlling Oscillation in APT9901 Zener Diode frequency Zener Diode high frequency applications
Text: Power Electronics Technology 2003 conference titled "Issues with Paralleling MOSFETs and IGBTs" by , paralleling MOSFETs. Parasitic oscillation can however be effectively eliminated with the use of a ferrite bead combined with a resistor on the gate of each MOSFET . This application note describes the nature , from Advanced Power Technology, rated at 500 Volts, 22 Amps. Each MOSFET has a 10 gate resistor , MOSFET has plenty of gain, and there is 180° phase shift. Also the dramatically varying


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PDF APT9901, ED-31, Severns Oscillation mosfet zener diode capacitance POWER MOSFET APPLICATION NOTE ED31 diode parallel connection of MOSFETs R. Severns "Controlling Oscillation in APT9901 Zener Diode frequency Zener Diode high frequency applications
CRY30M

Abstract: D1D40
Text: output relays feature MOSFET technology for low on-state resis tance, assuring easy paralleling and , 17 36 19 29 7-40Amp DC OUTPUT 0-500 VDC Series 1-DC · MOSFET Output · Low On-State Resistance · Paralleling Capability for Higher Currents GENNÀI SPECifriCATlff« See above. Operating


OCR Scan
PDF CRY30M DC60S3 DC60S5 DC60S7 D1D07 D1D12 D1D20 D1D40 D2D07 D2D12 CRY30M
2008 - atx 500w schematic

Abstract: 24V SMPS 200w circuit single output 500W flyback converter smps 500W mosfet igbt drivers theory flyback 200w ATX SMPS schematics smps new Solar Charge Controller Solar Charge Controller smps
Text: .18 Use Symmetrical Layout for Paralleling MOSFETs, and Good Isolation of Gate Drive between FETs .18 , dynamic losses, which is the signature of super junction MOSFET technology where the so-called "silicon , are indicated. SJ technology may lower the on-state resistance of a power MOSFET virtually towards zero. The basic idea is to allow the current to flow from top to bottom of the MOSFET in very high , conduction compared to what is the case in a standard MOSFET structure. In the blocking state of the SJ


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PDF ED-29, atx 500w schematic 24V SMPS 200w circuit single output 500W flyback converter smps 500W mosfet igbt drivers theory flyback 200w ATX SMPS schematics smps new Solar Charge Controller Solar Charge Controller smps
2011 - static characteristics of mosfet and igbt

Abstract: P969F
Text: With the paralleling of MOSFET and IGBT, it is possible to achieve a nearly constant efficiency at , utilization economical. This article describes power module topologies with paralleled MOSFET – IGBT switch, dedicated for new high efficient solar applications. Parallel Switched MOSFET with IGBT The combination , rendering the static losses of the switch to the IGBT and the dynamic losses to the MOSFET . 2. Boosting of efficiency at light load range by rendering both the static and the switching losses to the MOSFET . 3


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PDF H-2060 static characteristics of mosfet and igbt P969F
2010 - Dose

Abstract: No abstract text available
Text: PRELIMINARY SE M SC ICO F9 A 550 MOSFET Radiation Hardness Assurance 450 Volt 11 Amp 0.45 SCF 9550 N-Channel Power MOSFET DESCRIPTION Semicoa's Radiation Hardened MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven , switching, ease of paralleling and temperature stability of electrical parameters. FEATURES Total , Ease of Paralleling Simple Drive Requirements Hermetically Sealed Available in Die or Special Packages


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PDF MIL-STD-750, MIL-PRF-19500 Dose
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