The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LTC1177CSW Linear Technology IC BUF OR INV BASED MOSFET DRIVER, PDSO18, 0.300 INCH, PLASTIC, SO-18, MOSFET Driver
LTC4444-5IMS8E#PBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver

parallel mosfet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - AN1750

Abstract: 24v active clamp forward converter Si3458DV LM3406 led driver SOT23 6pin led driver mosfet SOT23 6pin ERJ6RQFR56V CMSH2-60M C4532X7R1H685M VLF10045T-330M2R3
Text: method for PWM dimming by connecting to the gate of MOSFET Q1. Q1 provides a parallel path for the LED current. Shunting the output current through a parallel MOSFET reduces the PWM dimming delays because the , output capacitor is that it causes significant delays when using parallel MOSFET dimming. The output capacitor should be removed to take full advantage of parallel MOSFET dimming. The logic of DIM2 is active , higher LED currents are set when the program jumper puts resistors R.7, R1 or R1.5 in parallel with R


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PDF LM3406 AN-1750 AN1750 24v active clamp forward converter Si3458DV led driver SOT23 6pin led driver mosfet SOT23 6pin ERJ6RQFR56V CMSH2-60M C4532X7R1H685M VLF10045T-330M2R3
2010 - GRM188R71C104K01D

Abstract: parallel mosfet SI4464DY-E3 AN1993 24v active clamp forward converter GENERAL SEMICONDUCTOR DIODE SMA 15A CRCW06031R00FNEA GRM188R71C223K01D FDC6333C MSS1038
Text: dimming by connecting to the gate of MOSFET Q1 through the driver U5. Q1 provides a parallel path for the LED current. Shunting the output current through a parallel MOSFET reduces the PWM dimming delays , significant delays when using parallel MOSFET dimming. The output capacitor should be removed to take full advantage of parallel MOSFET dimming. The logic of DIM2 is active low, hence the regulated output current , jumper puts resistors R4, R5 or R7 in parallel with R6. For users that wish to program a current other


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PDF LM3406HV AN-1993 GRM188R71C104K01D parallel mosfet SI4464DY-E3 AN1993 24v active clamp forward converter GENERAL SEMICONDUCTOR DIODE SMA 15A CRCW06031R00FNEA GRM188R71C223K01D FDC6333C MSS1038
single phase inverter mosfet

Abstract: half bridge inverter schematic single phase inverter Power INVERTER schematic circuit difference between IGBT and MOSFET IN inverter brush DC Motor control single phase half bridge inverter schematic 3 phase inverter circuits THREE PHASE INVERTER with protection circuit three phase motor inverter schematic
Text: Inverter Single Phase Inverter with Parallel MOSFET 's High Frequency Half Bridge Converter Brush DC , circuit board layout phase of the design. Circuit Example 3: Single Phase Inverter with Parallel MOSFET , for bridges that might parallel 10 or 12 transistors per switch group. It also works effectively with


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1997 - Appnote61

Abstract: mosfet switches ac ssr LH1500 Parallel operation mosfet siemens appnote 36
Text: Solid State Relay Parallel and DC Operation Appnote 61 Description Siemens Solid State Relay (SSR) outputs can be wired in parallel enabling the user to benefit from lower ON-resistance and , so that internal MOSFET switches can be paralleled for dc only switching applications. Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Siemens SSRs supply ample gate bias to the MOSFET switches to ensure positive


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PDF LH1500 Appnote61 mosfet switches ac ssr Parallel operation mosfet siemens appnote 36
LH1500

Abstract: Parallel operation mosfet g19k
Text: . Therefore, with parallel MOSFET operation, if one MOSFET switch draws more than average current, its , Appnote 61 VISHAY Vishay Semiconductors Solid State Relay Parallel and DC Operation Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Vishay SSRs supply ample gate bias to the MOSFET switches to , paralleled SSRs; and Rt is the parallel combination of all RONs for a given operating temperature.· Note


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PDF 02-Jun-03 LH1500 Parallel operation mosfet g19k
Parallel operation mosfet

Abstract: ac ssr LH1500
Text: VISHAY Vishay Semiconductors Solid State Relay Parallel and DC Operation (Appnote 61) Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Vishay SSRs supply ample gate bias to the MOSFET switches to ensure positive temperature coefficient RDSon operation even with LED input currents as low as 2 mA. Therefore, with parallel MOSFET operation, if one MOSFET switch draws more than average current, its resistance will increase


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PDF 02-Jun-03 Parallel operation mosfet ac ssr LH1500
2001 - ac ssr

Abstract: LH1500
Text: Solid State Relay Parallel and DC Operation Appnote 61 Description Infineon Solid State Relay (SSR) outputs can be wired in parallel enabling the user to benefit from lower ON-resistance and , so that internal MOSFET switches can be paralleled for dc only switching applications. Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Infineon SSRs supply ample gate bias to the MOSFET switches to ensure positive


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PDF LH1500 1-888-Infineon ac ssr
ac ssr

Abstract: MOSFET SSR parallel mosfet paralleling mosfet LH1500
Text: VISHAY Vishay Semiconductors Solid State Relay Parallel and DC Operation (Appnote 61) Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Vishay SSRs supply ample gate bias to the MOSFET switches to ensure positive temperature coefficient RDSon operation even with LED input currents as low as 2 mA. Therefore, with parallel MOSFET operation, if one MOSFET switch draws more than average current, its resistance will increase


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PDF 02-Jun-03 ac ssr MOSFET SSR parallel mosfet paralleling mosfet LH1500
2012 - Application Note 61

Abstract: Parallel operation mosfet
Text: Solid State Relay Parallel and DC Operation DESCRIPTION Vishay solid state relay (SSR) outputs can be wired in parallel enabling the user to benefit from lower on-resistance and higher load currents for AC , redundancy. Also, many of Vishay SPST SSRs provide a center tap so that internal MOSFET switches can be , two SSRs in two different packages with identical RON electrical specifications are placed in parallel , proximity of one MOSFET switch to another. The single-die construction also provides excellent thermal


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PDF 02-Jul-12 Application Note 61 Parallel operation mosfet
2001 - LH1500

Abstract: No abstract text available
Text: Solid State Relay Parallel and DC Operation Appnote 61 Description Vishay Solid State Relay (SSR) outputs can be wired in parallel enabling the user to benefit from lower ON-resistance and , that internal MOSFET switches can be paralleled for dc only switching applications. Static Current Sharing MOSFET switches operate as positive temperature coefficient resistors when VGS is large. The control circuit of Vishay SSRs supply ample gate bias to the MOSFET switches to ensure positive


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PDF 17-August-01 LH1500
2008 - Not Available

Abstract: No abstract text available
Text: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal C OLMOS O Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated G • Dual die ( parallel ) • Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is


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PDF APT94N65B2C3 APT94N65B2C3G* APT94N65B2C3S Continuo50 O-247
Not Available

Abstract: No abstract text available
Text: APT106N60B2C6 600V 106A 0.035 C OLMOS O Super Junction MOSFET Power Semiconductors • Ultra Low R DS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Q g • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die ( parallel ) G • Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode


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PDF APT106N60B2C6 O-247
2009 - diode 748 36A

Abstract: APT36N90BC3G apt30df60
Text: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C OLMOS O Super Junction MOSFET Power Semiconductors TO -24 7 D3 · Ultra Low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated D · Extreme dv/dt Rated G · Dual die ( parallel ) · Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for


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PDF APT36N90BC3G* APT36N90BC3G diode 748 36A APT36N90BC3G apt30df60
2009 - mosfet 600V 60A

Abstract: No abstract text available
Text: 900V 60A APT60N90JC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET G S D S · Ultra Low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated · Extreme dv/dt Rated · Dual die ( parallel ) · Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable


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PDF APT60N90JC3G* E145592 mosfet 600V 60A
AN941

Abstract: IRF1404 FET IRF1404 Analysis of Avalanche Behaviour for Paralleled MOSFETs FET model Measurement of stray inductance parallel connection of MOSFETs parallel MOSFET Transistors
Text: power devices. II: Introduction: Parallel MOSFET devices are now commonly used in both module and , quasi-thermal avalanche characteristic is then added in parallel with the MOSFET model as shown in Figure 2 , variation and package parasitics. Previously, most concerns related to parallel MOSFETs focused on load , MOSFET 's Rds(on) is proportional to its break down voltage, a MOSFET optimised for higher V(BR)DSS will , clamp. When parallel devices are operated into avalanche, the statistical normal distribution of V(BR


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PDF AN941 Asssure2000 AN941 IRF1404 FET IRF1404 Analysis of Avalanche Behaviour for Paralleled MOSFETs FET model Measurement of stray inductance parallel connection of MOSFETs parallel MOSFET Transistors
2006 - APT10043JVR

Abstract: No abstract text available
Text: stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation


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PDF APT10043JVR OT-227 RATIN57) E145592 APT10043JVR
2006 - APT8028JVR

Abstract: No abstract text available
Text: stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation


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PDF APT8028JVR OT-227 E145592 APT8028JVR
2006 - APT77N60JC3

Abstract: No abstract text available
Text: APT77N60JC3 600V 77A 0.035 Super Junction MOSFET S S C OLMOS O 27 2 T- D G SO Power Semiconductors · Ultra low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated · Popular SOT-227 Package · N-Channel Enhancement Mode "UL Recongnized" file # 145592 ISOTOP fi D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is


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PDF APT77N60JC3 OT-227 APT77N60JC3
2006 - Not Available

Abstract: No abstract text available
Text: APT34N80B2C3(G) APT34N80LC3(G) 800V 34A 0.145 *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET C O OLMOS Power Semiconductors T-MAXTM TO-264 · Ultra low RDS(ON) · Low Miller Capacitance · Ultra Low Gate Charge, Qg · Avalanche Energy Rated · Popular T-MAXTM or TO-264 Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not


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PDF APT34N80B2C3 APT34N80LC3 O-264 O-264 O-247
Not Available

Abstract: No abstract text available
Text: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET S S D G C OLMOS O SO Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular SOT-227 Package 27 -2 T • N-Channel Enhancement Mode "UL Recognized" ISOTOP ® D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for


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PDF APT31N80JC3 OT-227
Not Available

Abstract: No abstract text available
Text: -227 Package D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not


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PDF APT8028JVR OT-227 E145592
Not Available

Abstract: No abstract text available
Text: ISOTOP ® D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not


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PDF APT6013JVR OT-227 E145592
2006 - APT20M19JVR

Abstract: No abstract text available
Text: Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode


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PDF APT20M19JVR OT-227 E145592 APT20M19JVR
Not Available

Abstract: No abstract text available
Text: -227 Package D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not


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PDF APT10043JVR OT-227 E145592
Not Available

Abstract: No abstract text available
Text: SOT-227 Package D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It


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PDF APT50M85JVR OT-227
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