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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LTC1177CSW Linear Technology IC BUF OR INV BASED MOSFET DRIVER, PDSO18, 0.300 INCH, PLASTIC, SO-18, MOSFET Driver
LTC4444-5IMS8E#PBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver

parallel MOSFET Transistors Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - MOSFET Application Hints

Abstract: AVALANCHE TRANSISTOR Mosfet application
Text: transistors , are easy to parallel enhances this development. The main advantages of paralleled MOS , operating states may occur, particularly when n transistors are connected in parallel and one transistor , interesting for the user to know whether n transistors connected in parallel can absorb n times the avalanche , connected in parallel . Semiconductor Group 9 MOSFET Application Hints Example: Case 1 VDS = , investigates the avalanche action of power MOSFETs connected in parallel . A disadvantage of this


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2002 - IBJT

Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition gto 5A 500V Rudy Severns TA84-5 D50026 AN918 Paralleling Power MOSFETs in Switching Applications
Text: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE , the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but , devices must be handled differently when operated in parallel . Power bipolar transistors , SCRs, MOSFETs , All the conventional wisdom applied in the past to parallel bipolar type devices and MOSFET type devices can be applied to parallel operation of IGT Transistors . 1. 2. Note that 15 paralleled


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2001 - transistor bt 808

Abstract: "General Electric SCR Manual" 6th General Electric SCR Manual 6th edition BT thyristor 808 IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA AN-7512 ta84
Text: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te , composed of the MOSFET voltage drop plus the bipolar VBE drop apparently parallel by a pnp-transistor. Note that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the , All the conventional wisdom applied in the past to parallel bipolar type devices and MOSFET type devices can be applied to parallel operation of IGT Transistors . 1. 2. Note that 15 paralleled


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1999 - IBJT

Abstract: General Electric SCR Manual 6th edition AN9319 "General Electric SCR Manual" 6th Rudy Severns TA84-5 d50026 AN918 MOTOROLA AN-918 AN918 Paralleling Power MOSFETs in Switching Applications
Text: Parallel Operation Of Insulated Gate Transistors In the November issue of Powertechnics, the , devices must be handled differently when operated in parallel . Power bipolar transistors , SCRs, MOSFETs , applied in the past to parallel bipolar type devices and MOSFET type devices can be applied to parallel , Operation of SCR's. R1 +5V 7402N [2] Use Equations to Parallel Transistors . Otto R. Buhler, IBM , . [7] Parallel Operation of MOSFET 's in DC-DC Converters, Rudy Severns, Siliconix, Powertechnics


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PDF AN9319 IBJT General Electric SCR Manual 6th edition AN9319 "General Electric SCR Manual" 6th Rudy Severns TA84-5 d50026 AN918 MOTOROLA AN-918 AN918 Paralleling Power MOSFETs in Switching Applications
2002 - General Electric SCR Manual 6th edition

Abstract: Siliconix Handbook "General Electric SCR Manual" 6th AN918 MOTOROLA Rudy Severns TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications Severns paralleling mosfet SCR Manual
Text: section of Figure 7. Like the MOSFET , the IGT consists of many individual cells connected in parallel , Parallel Transistors . Otto R. Buhler, IBM, Boulder, Colorado, Electronics Design 4, February 15,1977. [3] Parallel Operations of Power Transistors in Switching Applications. Sebald R. Korn, General Electric , Applications, by Kim Gauen, Motorola, Application Note AN-918, 1984. [7] Parallel Operation of MOSFET 's in , Applications Handbook, Siliconix, Inc., Chapter 5.3, Parallel Operation of Power MOSFET 's (TA84-5). [10


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1999 - AN918 MOTOROLA

Abstract: General Electric SCR Manual 6th edition AN-918 AN9320 AN918 Paralleling Power MOSFETs in Switching Applications Rudy Severns SCR Handbook, General electric TA84-5 1/AN918 MOTOROLA scr manual
Text: Equations to Parallel Transistors . Otto R. Buhler, IBM, Boulder, Colorado, Electronics Design 4, February 15,1977. [3] Parallel Operations of Power Transistors in Switching Applications. Sebald R. Korn , MOSFET 's (TA84-5). [10] Motor Control Applications of Second Generation IGTTM Power Transistors , by , Parallel Operation Of Semiconductor Switches Application Note June 1993 (Figure 1). The , to parallel operation. In uninterruptable power supplies demands for current handling capability


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2001 - "General Electric SCR Manual" 6th

Abstract: motorola 7513 General Electric SCR Manual 6th edition SCR Handbook, General electric AN918 MOTOROLA AN918 Paralleling Power MOSFETs in Switching Applications Analog/NTP 7513 TA84-5 Severns Parallel operation mosfet
Text: section of Figure 7. Like the MOSFET , the IGT consists of many individual cells connected in parallel , Equations to Parallel Transistors . Otto R. Buhler, IBM, Boulder, Colorado, Electronics Design 4, February 15,1977. [3] Parallel Operations of Power Transistors in Switching Applications. Sebald R. Korn , MOSFET 's (TA84-5). [10] Motor Control Applications of Second Generation IGTTM Power Transistors , by , Parallel Operation Of Semiconductor Switches Application Note Title N93 bt raleran Of


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1993 - "General Electric SCR Manual" 6th

Abstract: General Electric SCR Manual 6th edition SCR Applications Handbook TA84-5 SCR Handbook, General electric AN918 MOTOROLA Rudy Severns HEXFET Power MOSFET designer manual "scr manual" AN-918
Text: Equations to Parallel Transistors . Otto R. Buhler, IBM, Boulder, Colorado, Electronics Design 4, February 15,1977. [3] Parallel Operations of Power Transistors in Switching Applications. Sebald R. Korn , MOSFET 's (TA84-5). [10] Motor Control Applications of Second Generation IGTTM Power Transistors , by , Harris Semiconductor No. AN9320 Harris Power June 1993 Parallel Operation Of , with SCR's [1], bipolar transistors [2-4] darlingtons [5] and field effect transistors [6-10], have


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PDF AN9320 AN-918, TA84-5) "General Electric SCR Manual" 6th General Electric SCR Manual 6th edition SCR Applications Handbook TA84-5 SCR Handbook, General electric AN918 MOTOROLA Rudy Severns HEXFET Power MOSFET designer manual "scr manual" AN-918
1993 - IBJT

Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA TA84-5 14v 10A mosfet
Text: bipolar type devices and MOSFET type devices can be applied to parallel operation of IGT Transistors , the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but , differently when operated in parallel . Power bipolar transistors , SCRs, MOSFETs and IGTs all have different , MOSFET voltage drop plus the bipolar VBE drop apparently parallel by a pnp-transistor. Note Copyright , 6.2, Parallel Operation of SCR's. [2] Use Equations to Parallel Transistors . Otto R. Buhler, IBM


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PDF AN9319 IBJT SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA TA84-5 14v 10A mosfet
Ultrasonic humidifier circuit

Abstract: 2SK962 equivalent 200w dc to ac inverter Circuit diagram ups manufacturing transformer diagram ultrasonic humidifier driver circuit transistor 2SK1082 ER038-06 D 83-004 12V DC to 500V AC inverters circuit diagram EAA91
Text: must often be connected in parallel . Power MOSFETs can more easily be paralleled than bipolar transistors because the power MOSFET has a positive temperature coefficient which is self-compensating for , device. Therefore, 4.7Q or larger resistor should be connected in series to each of the parallel MOSFET , capabilities. A power MOSFET consists of several ten thousands FET elements, interconnected in parallel on a , \ I POWER MOSFET APPLICATION NOTES i Typical power MOSFET applications I 700- 800 900


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PDF 100VAC) 80VDC) 100VAC, 0-300W) 100VAC. 0-80W) 100ps/l Ultrasonic humidifier circuit 2SK962 equivalent 200w dc to ac inverter Circuit diagram ups manufacturing transformer diagram ultrasonic humidifier driver circuit transistor 2SK1082 ER038-06 D 83-004 12V DC to 500V AC inverters circuit diagram EAA91
Not Available

Abstract: No abstract text available
Text: MOSFET as to drive method, switching time, safe operation area, breakdown voltage, ON voltage, parallel , Power Transistors and Power MOSFETs Bipolar Power Transistor Power MOSFET D C B Symbol , Power MOSFET Construction and Characteristics Power MOSFET in Detail 2. Construction and , , bipolar transistors , where such effects create more serious design problems. Also, the input impedance of , Power MOSFET Construction Power MOSFETs are classified into three major types as shown in Figure 2.1


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2010 - XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf smd marking D3 SOT363 XM0860SH smd code marking NEC rf transistor MGA51563
Text: Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI , Type List 73 Support material 75 3 RF Bipolar Transistors & Active Bias Controller fT , Transistors BCR400W BCR410W Maximum Ratings VS [V] 18 18 ID [mA] 10 0.5 Ptot [mW] 330 100 DC Characteristics with Stabilized NPN Transistors (TA = 25°C) Relative Change IC/IC VS (min


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PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf smd marking D3 SOT363 XM0860SH smd code marking NEC rf transistor MGA51563
Not Available

Abstract: No abstract text available
Text: −15 V 5 μs/div 0 6 Power MOSFET in Detail 5.6 Parallel Connections Power MOSFETs , Power MOSFET Application Precautions Power MOSFET in Detail 5. Application Precautions 5.1 Precautions Concerning Drive Conditions for Shortening Switching Time Bipolar transistors , power MOSFETs by dropping the gate voltage to zero but, as with bipolar transistors , it is also possible to turn a Power MOSFET OFF quickly by reducing the value of the charge Q to zero. The charge Q


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1997 - LTC1172

Abstract: CTX110092 h bridge irf840 inverter transistor npn 12V 1A Collector Current 12v DC SERVO MOTOR CONTROL circuit 2A push pull converter 70V Zetex AN12 FMMT618 motor controller IRF830 12v dc motor speed controller using igbt pwm
Text: technology used to manufa cture the Zetex transistors eliminates the need for parallel collector emitter , , the TO126 or TO220 packaged output transistors normally used require parallel collector emitter , cture the Zetex transistors eliminates the need for parallel collector emitter protection diodes. The , Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors . David Bradbury , or expensive SOT89, SOT223 and D-Pak surface mount transistors . voltage performance given by the


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PDF FMMT718 OT223 FMMT618/718 FMMT618 FMMT619 BCP56 FMMT619s, LTC1172 CTX110092 h bridge irf840 inverter transistor npn 12V 1A Collector Current 12v DC SERVO MOTOR CONTROL circuit 2A push pull converter 70V Zetex AN12 motor controller IRF830 12v dc motor speed controller using igbt pwm
2008 - Design And Application Guide For High Speed MOSFET

Abstract: slup133 UCC2732X
Text: driver are bipolar and MOSFET transistors in parallel . The pulsed output current rating is the combined current from the bipolar and MOSFET transistors . The pullup/pulldown circuits of the driver are bipolar and MOSFET transistors in parallel . The output resistance is the RDS(ON) of the MOSFET transistor when , transistors in parallel . The peak output current rating is the combined current from the bipolar and MOSFET , °C TrueDriveTM Output Architecture Using Bipolar and CMOS Transistors in Parallel · Qualified for Automotive


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PDF UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 SLUS678 20-ns 15-ns Design And Application Guide For High Speed MOSFET slup133 UCC2732X
2008 - Design And Application Guide For High Speed MOSFET

Abstract: H 48 zener diode diagram UCC2732X
Text: driver are bipolar and MOSFET transistors in parallel . The pulsed output current rating is the combined current from the bipolar and MOSFET transistors . The pullup/pulldown circuits of the driver are bipolar and MOSFET transistors in parallel . The output resistance is the RDS(ON) of the MOSFET transistor when , transistors in parallel . The peak output current rating is the combined current from the bipolar and MOSFET , °C TrueDriveTM Output Architecture Using Bipolar and CMOS Transistors in Parallel · Qualified for Automotive


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PDF UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 SLUS678 20-ns 15-ns Design And Application Guide For High Speed MOSFET H 48 zener diode diagram UCC2732X
2008 - SLUP133

Abstract: UCC27323 UCC27324 UCC27325 Design And Application Guide For High Speed MOSFET UCC2732X High-Speed Power MOSFET Drivers
Text: transistors in parallel . The pulsed output current rating is the combined current from the bipolar and MOSFET transistors . The pullup/pulldown circuits of the driver are bipolar and MOSFET transistors in parallel . The , driver are constructed of bipolar and MOSFET transistors in parallel . The peak output current rating is , Architecture Using Bipolar and CMOS Transistors in Parallel APPLICATIONS · · · · · Switch-Mode , during the MOSFET switching transition. A unique bipolar and MOSFET hybrid output stage in parallel also


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PDF UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 SLUS678 20-ns 15-ns UCC27323 SLUP133 UCC27323 UCC27324 UCC27325 Design And Application Guide For High Speed MOSFET UCC2732X High-Speed Power MOSFET Drivers
2008 - SLUP133

Abstract: UCC2732X 27324Q UCC27323 UCC27324 UCC27325 Bill Andreycak Design And Application Guide For High Speed MOSFET
Text: transistors in parallel . The pulsed output current rating is the combined current from the bipolar and MOSFET transistors . The pullup/pulldown circuits of the driver are bipolar and MOSFET transistors in parallel . The , driver are constructed of bipolar and MOSFET transistors in parallel . The peak output current rating is , Architecture Using Bipolar and CMOS Transistors in Parallel APPLICATIONS · · · · · Switch-Mode , during the MOSFET switching transition. A unique bipolar and MOSFET hybrid output stage in parallel also


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PDF UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 SLUS678 20-ns 15-ns UCC27323 SLUP133 UCC2732X 27324Q UCC27323 UCC27324 UCC27325 Bill Andreycak Design And Application Guide For High Speed MOSFET
MG400H1FL1

Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
Text: laying out the devices. (4.4) Using method of direct parallel When connecting transistors in parallel , circuit design is extremely important for the effective and reli able operation of the transistors for the target service life. Semiconductor products such as transistors and diodes all have one thing in common , are maximum values beyond which the service life and reliability of the transistors cannot be , ratings All transistors have emitter (source), base (gate) and collector (drain) terminals which are used


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MOSFET TOSHIBA 2SK

Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj Transistor TOSHIBA 2SK TPCS8201 POWER MOS FET 2sj 2sk toshiba POWER MOS FET 2sj 2sk
Text: MOSFET as to drive method, switching time, safe operation area, breakdown voltage, ON voltage, parallel , between Bipolar Power Transistors and Power MOSFETs Bipolar Power Transistor Power MOSFET C D , -15 V 5 µs/div 0 67 [ 3 ] Power MOSFET in Detail 5.6 Parallel Connections Power , 0 Figure 5.8 Imbalance of Current in Parallel Connection 68 [ 3 ] Power MOSFET in , [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1


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2001 - motor driver ic 7324

Abstract: UCCx7324 parallel mosfet UCC27324 UCC37324 UCCx7325 UCCx7323 SLUP133 UCC27323D UCC37324 equivalent
Text: / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel . The pulsed output current , circuits of the driver are bipolar and MOSFET transistors in parallel . The output resistance is the RDS(ON , and MOSFET transistors in parallel . The peak output current rating is the combined current from the , transistors in parallel . The output resistance is the RDS(ON) of the MOSFET transistor when the voltage on , driver are constructed of bipolar and MOSFET transistors in parallel . The peak output current rating is


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PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492A 20-ns 15-ns motor driver ic 7324 UCCx7324 parallel mosfet UCC27324 UCC37324 UCCx7325 UCCx7323 SLUP133 UCC27323D UCC37324 equivalent
transistor 2sk

Abstract: MOSFET TOSHIBA 2Sj equivalent 2sk2698 mosfet MOSFET TOSHIBA 2SK HIGH POWER MOSFET TOSHIBA TE161 equivalent 2sk2837 mosfet 2SK2615 2SK2837 equivalent transistor TO 2sk
Text: MOSFET as to drive method, switching time, safe operation area, breakdown voltage, ON voltage, parallel , between Bipolar Power Transistors and Power MOSFETs Bipolar Power Transistor Power MOSFET C D , max -15 V 5 µs/div 0 61 [ 3 ] Power MOSFET in Detail 5.6 Parallel Connections , . ID2 0 Figure 5.8 Imbalance of Current in Parallel Connection 62 [ 3 ] Power MOSFET in , [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1


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2002 - SMBJ5A

Abstract: irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board TL431 928 hp laser printer 600v
Text: EEPROM V Bipolar Transistors S Correction Low Voltage MOSFET Horizontal Deflection , Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage , DDR110 Various Standard Logic PROCESSOR MOSFET SCHOTTKY DALC DVI HDD CD/DVD IDE+ 1394 , ) KBMF01SC6 Keyboard & Mouse EMI Filter -30 300 ST1284-01A8 Parallel Port EMI Filter 4.7k


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PDF ST1284 RS232 DDR110 PowerSO-10, ISOWATT218, SMBJ5A irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board TL431 928 hp laser printer 600v
2001 - TEXAS INSTRUMENT N PACKAGE DIMENSION

Abstract: No abstract text available
Text: / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel . The pulsed output current , of the driver are bipolar and MOSFET transistors in parallel . The output resistance is the RDS(ON) of , / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel . The peak output current , of the driver are bipolar and MOSFET transistors in parallel . The output resistance is the RDS(ON) of , driver are constructed of bipolar and MOSFET transistors in parallel . The peak output current rating is


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PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B 20-ns 15-ns TEXAS INSTRUMENT N PACKAGE DIMENSION
2001 - Not Available

Abstract: No abstract text available
Text: / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel . The pulsed output current , of the driver are bipolar and MOSFET transistors in parallel . The output resistance is the RDS(ON) of , driver are bipolar and MOSFET transistors in parallel . The peak output current rating is the combined , bipolar and MOSFET transistors in parallel . The output resistance is the RDS(ON) of the MOSFET transistor , pullup/ pulldown circuits of the driver are constructed of bipolar and MOSFET transistors in parallel


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PDF UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B 20-ns 15-ns
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