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Part Manufacturer Description Datasheet Download Buy Part
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver
LT1161IS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver

p channel mosfet 100v 70a to-252 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - IRF P CHANNEL MOSFET 200V 20A

Abstract:
Text: POLARITY N: N-Channel P : P-Channel VOLTAGE RATING 05 = 50V, 10 = 100V , 20 = 200V, etc. FEATURE , ) POLARITY N: N-Channel P : P-Channel VOLTAGE RATING 05 = 50V, 10 = 100V , 20 = 200V, etc. FEATURE , -251, TO- 252 (D-PAK) DEVICE TYPE F: Standard MOSFET L: Current Limited MOSFET R RFD12N06RLESM , 100V 80V 60V 0.200 30V 0.100 rDS(ON) BVDSS R and IRF Series Power MOSFET TO , N P P N N N CHANNEL N N CHANNEL N N N N N N CHANNEL


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PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF N CHANNEL MOSFET 10A 1000V IRF P CHANNEL MOSFET IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
5a6 zener diode

Abstract:
Text: =1.5A, VGS=10V SMD TSOP-6 N-Channel 100-V (D-S) MOSFET RDSon=60mOhm@ Q-Level SMD Si4482DY , -8 Si4486EY N-Channel 100-V (D-S) MOSFET RDSon=25mOhm@ ID=7.9A, VGS=10V SMD SO-8 Si4848DY , =26A, VGS=10V SMD TO- 252 P-Channel 20-V (D-S) MOSFET , Low-Threshold RDSon=650mOhm@ ID=-0,58A , =-10V SMD SOT-23 (TO-236) Si2328DS N-Channel 100-V (D-S) MOSFET RDSon=250mOhm@ ID=1.5A, VGS , P-Channel 2.5-V (G-S) MOSFET Doual -N/ P N-Channal, RDSon=25/33mOhm SMD SO-8 N-Channel 30-V (D-S


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PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode 10v ZENER DIODE 5A6 smd sot23 DG9415 diode zener 6.2v 1w dual mosfet dip
2009 - Not Available

Abstract:
Text: ST18N10D N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION ST18N10D is the N-Channel logic , current capability TO- 252 Package design PART MARKING W: Wafer Code P : Product Code Y: Year Code A , Copyright © 2009, Stanson Corp. ST18N10D 2009. V1 ST18N10D N Channel Enhancement Mode MOSFET , Corp. ST18N10D 2009. V1 ST18N10D N Channel Enhancement Mode MOSFET 18.0A ELECTRICAL , N Channel Enhancement Mode MOSFET 18.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120


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PDF ST18N10D ST18N10D O-252 00V/12 00V/8 O-252
2009 - p channel mosfet 100v

Abstract:
Text: ST13P10 P Channel Enhancement Mode MOSFET -13.0A DESCRIPTION ST13P10 is the P-Channel logic , ST13P10 P Channel Enhancement Mode MOSFET -13.0A ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless , version www.pdffactory.com ST13P10 P Channel Enhancement Mode MOSFET -13.0A STANSON TECHNOLOGY , pdfFactory Pro trial version www.pdffactory.com ST13P10 P Channel Enhancement Mode MOSFET -13.0A TO , version www.pdffactory.com ST13P10 P Channel Enhancement Mode MOSFET -13.0A TO-251 PACKAGE


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PDF ST13P10 ST13P10 O-252 O-251 -100V/-13 O-252 O-251 p channel mosfet 100v S 170 MOSFET TRANSISTOR TO-252 MOSFET p channel mosfet vgs 5v vds 100v RD62 Stanson Technology TO-251 Outline
2014 - ST16N10

Abstract:
Text: ST25N10 N Channel Enhancement Mode MOSFET 25.0A DESCRIPTION ST25N10 is the N-Channel logic , charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO- 252 FEATURE 100V /12.0A , Corp. ST25N10 2013. V1 ST25N10 N Channel Enhancement Mode MOSFET 25.0A SOULTE MAXIMUM , 2013. V1 ST25N10 N Channel Enhancement Mode MOSFET 25.0A ELECTRICAL CHARACTERISTICS ( Ta = , Channel Enhancement Mode MOSFET 25.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley


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PDF ST25N10 ST25N10 ST16N10 O-252 00V/12 00V/10 O-252
1N48 zener

Abstract:
Text: Fault-Protected Analog Multiplexers - 100V OVERVOLTAGE N-CHANNEL MOSFET IS TURNED ON BECAUSE VGS - «- 100V - P-CHANNEl MOSFET 02 IS OFF Figure 9. ■100V Overvollage with Mux Power Off -15 V -60V OVERVOLTAGE 101 , DRIVERS MOSFET IS OFF P-CHANNEL MOSFET IS OFF ♦ 100V OVERVOLTAGE N-CHANNEL MOSFET IS TURNED OFF , = A2 = +5V ( channel 1 selected). 20Vp- p at the tabulated frequency is applied to channel 2. All , Description The MAX388 8- channel single-ended (1-of-8) and the MAX389 4- channel differential (2


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PDF MAX388 MAX389 TEFORMAX389 730mm) 1N48 zener 1n48 zener diode 02V0 1N48 diode max388 maxim MAX388CWG MAX388CPN MAX388CJN MAX389cpn
2009 - Not Available

Abstract:
Text: STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic , 2009. V1 STP413D P Channel Enhancement Mode MOSFET -12.0A TYPICAL CHARACTERICTICS STANSON , Corp. STP413D 2009. V1 STP413D P Channel Enhancement Mode MOSFET -12.0A TYPICAL , Copyright © 2009, Stanson Corp. STP413D 2009. V1 STP413D P Channel Enhancement Mode MOSFET -12.0A , © 2009, Stanson Corp. STP413D 2009. V1 STP413D P Channel Enhancement Mode MOSFET -12.0A


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PDF STP413D STP413D O-252 O-251 -40V/-12 -40V/-8 O-252-2L
2011 - STP4189D

Abstract:
Text: STP4189D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP4189D is the P-Channel logic , © 2009, Stanson Corp. STP4189D 2009. V1 STP4189D P Channel Enhancement Mode MOSFET -12.0A , Copyright © 2009, Stanson Corp. STP4189D 2009. V1 STP4189D P Channel Enhancement Mode MOSFET -12.0A , Corp. STP4189D 2009. V1 STP4189D P Channel Enhancement Mode MOSFET -12.0A TYPICAL , Copyright © 2009, Stanson Corp. STP4189D 2009. V1 STP4189D P Channel Enhancement Mode MOSFET -12.0A


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PDF STP4189D STP4189D STP413D O-252 O-251 -40V/-12 -40V/-8 O-252 O-251
2010 - Not Available

Abstract:
Text: STP6635GH P Channel Enhancement Mode MOSFET -40.0A DESCRIPTION STP6635GH is the P-Channel logic , . STP6635GH 2009. V1 STP6635GH P Channel Enhancement Mode MOSFET -40.0A ABSOULTE MAXIMUM RATINGS (Ta = , . STP6635GH 2009. V1 STP6635GH P Channel Enhancement Mode MOSFET -40.0A ELECTRICAL CHARACTERISTICS ( Ta , Copyright © 2009, Stanson Corp. STP6635GH 2009. V1 STP6635GH P Channel Enhancement Mode MOSFET , www.stansontech.com Copyright © 2009, Stanson Corp. STP6635GH 2009. V1 STP6635GH P Channel Enhancement Mode


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PDF STP6635GH STP6635GH STP413D O-252 O-251 -30V/-26 -30V/-16 O-252
2004 - 028N06NS

Abstract:
Text: channel , provided the LTC4359s are enabled. In the disabled state the associated Q1 MOSFET is turned off , ION OP T ION T P 2A T P 1A D6A S OUR C E DR AIN S MAT 70A OP T ION D5A B AV 3004W OP T , 1210 OP T ION OP T ION T P 1B T P 2B D6B S OUR C E DR AIN S MAT 70A OP T ION NOTE , VS S T P 4B 6 3 2 1 2 7 1 R 1B 1K 1206 O UT D3B S MAT 70A OP T ION R , a 4.5V to 28V range. Each channel is capable of carrying 20A. Through-hole pads are included to


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PDF DC1502A LTC4359HDCB 2V/20A LTC4359 dc1502af 028N06NS BCS028N06NS DC1502
IRU1239SC

Abstract:
Text: 10BQ100PBF Discrete Schottky SMB 1,000 100V 1A Schottky Discrete Diode in a SMB package 1 1 0 0 CH 10BQ100TRPBF Discrete Schottky SMB 3,000 100V 1A Schottky Discrete Diode in a SMB package 1 1 0 0 CH 10BQ100 Discrete Schottky SMB 1,000 100V 1A Schottky , 100V 1A Schottky Discrete Diode in a SMB package 0 0 0 0 CH http://www.szshouhe.com , 100V 1.5A Schottky Discrete Diode in a SMA package 1 1 0 0 CH 10MQ100NTRPBF Discrete


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PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
2013 - Not Available

Abstract:
Text: Drive Devices For N and P Channel Power MOSFET Notes: 1. Repetitive rating; pulse width limited by , UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Preliminary Power MOSFET 100V , 12A P-CHANNEL POWER MOSFET  1 DESCRIPTION TO-251 The UTC UTT12P10 is a P-channel power MOSFET using UTC’s , (ON) <0.29Ω @ V GS =-10V, I D =-12A * High Switching Speed  TO- 252 SYMBOL 2.Drain 1 , D: Drain S: Source UTT12P10L-TM3-R Package TO-251 TO- 252 TO- 252 Pin Assignment 1 2 3


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PDF UTT12P10 O-251 UTT12P10 O-252 UTT12P10L-TM3-T UTT12P10G-TM3-T UTT12P10L-TN3-T UTT12P10G-TN3-T UTT12P10L-TN3-R UTT12P10G-TN3-R
55n03

Abstract:
Text: TSM55N03 25V N-Channel MOSFET TO- 252 *TTW Ì 2~3 Pin Definition: 1. Gate 2. Drain 3 , Packing TSM55NÛ3CP RO TO- 252 2.5Kpcs /13" Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25 , » AkKjnted 10 100 Square Wave Pulse Duration (sec) 4/6 Version: A07 TSM55N03 25V N-Channel MOSFET SOT- 252 , Avalanche Energy (VDD = 100V , VGs=10V, Us=2A, L=10mH, RG=25Q) EAS 300 mJ M ax i mu m Power D i s s i patio n Ta = 25"C Pu 65 W Ta = 70 °C 42 Operating Junction Temperature Tj +150 °C Operating


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PDF TSM55N03 O-252 TSM55NÃ O-252 55n03 marking 1AJ MOSFET 55N03 TSM55N03
2011 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT18P10 Power MOSFET 100V , 19A P-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UTT18P10 is a P-channel power MOSFET using UTC’s advanced , Channel Power MOSFET Notes: 1. Repetitive rating; pulse width limited by max. junction temperature. 2 , resistance. It can also withstand high energy in the avalanche. TO- 252 FEATURES * RDS(ON)<0.20Ω @ , ., Ltd Package TO- 252 Pin Assignment 1 2 3 G D S Packing Tape Reel 1 of 6 QW-R502


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PDF UTT18P10 UTT18P10 O-252 UTT18P10L-TN3-R UTT18P10G-TN3-R QW-R502-619
2012 - Not Available

Abstract:
Text: ISD * VGS=5V for Logic Level and 3V Drive Devices For N and P Channel Power MOSFET Notes: 1 , UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT12P10 Power MOSFET 100V , 12A P-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced , resistance. It can also withstand high energy in the avalanche. TO- 252 FEATURES * RDS(ON)<0.29Ω @ , ., Ltd Package TO- 252 Pin Assignment 1 2 3 G D S Packing Tape Reel 1 of 6 QW-R502


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PDF UTT12P10 UTT12P10 O-252 UTT12P10L-TN3-R UTT12P10G-TN3-R QW-R502-722
2013 - Not Available

Abstract:
Text: For N and P Channel Power MOSFET Notes: 1. Repetitive rating; pulse width limited by max. junction , UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V , 12A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the , Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-251 TO- 252 TO- 252 Pin Assignment 1 2 ,  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER


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PDF UTT12P10 UTT12P10 UTT12P10L-TM3-T UTT12P10G-TM3-T UTT12P10L-TN3-T UTT12P10G-TN3-T UTT12P10L-TN3-R UTT12P10G-TN3-R QW-R502-722
2013 - RJK03P7DPA

Abstract:
Text: voltage Polarity (N/ P ) Automotive ~ 100V Gen7 UMOS3 1.0 75~ 100V ANM1 under development P P P 0.8 N- P P P N+ Nn - 5um cell n + 100V 0.5 N+ 3um cell , © 2013 Renesas Electronics Europe. All rights reserved. PAE-AA-12-0177-1 ANL2 MOSFET TO- 252 ID , 100V 20V 82A 15mΩ 2900pF TO-263 NP70N10KUF 100V 20V 70A 20mâ , 20V 40A 26mΩ 2100pF TO- 252 NP36N10SDE 100V 20V 36A 33mΩ 3500pF TO- 252


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PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ NP109N04PUK rjp65t43 rjh60t04 rjh60d7bdpq PS2761B-1 NP75N04YUG NP60N055MUK RJU6052SDPD-E0
2008 - RC1206JR-072RL

Abstract:
Text: MMBT3904LT1G N-channel MOSFET TO- 252 40A, 100V Vishay SUD40N10-25-E3 Q7 P channel MOSFET TO- 252 19A, 60V Vishay SUD19P0660L- E3 Q9 N channel MOSFET SOT23 200 mA, 60V R3, R12, R15 , , J6,-J8, J13, J14, J16 Jumper L1 22 µH Q5, Q6 N-channel MOSFET TO- 252 40A, 100V Q9 N channel MOSFET SOT23 200 mA, 60V R6 Resistor 2512 0.06 R7, R8 R9 NSC Vishay , : Enables LM3423. J2 Current Limit (IS) OPEN: Disables MOSFET RDS(ON) current sensing "Q5". CLOSED


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PDF LM3423 AN-1872 RC1206JR-072RL digital p channel mosfet sot-23 fairchild 174-K SUD40N10-25 LM3423MH Initio ERJL12KF10CU AN-1872 22-28-4023
diagram LG LCD TV circuits

Abstract:
Text: Ohm max Typology End Product Vds ID P /N Package Type 10V 4.5V Mosfet , P /N Package Type 10V 4.5V Mosfet Status Push-Pull LCD-M 30 6 , & MNT IC's Discrete Transistor G/ P Transistor Power Regulator Management Switching , Power MOSFET DC / DC Converter Trench MOSFET Small Signal MOSFET Voltage Detector OP , LCD TV Block POWER MANAGEMENT POWER MANAGEMENT MOSFET KMA6D5P20Q, KMA6D0P20X, KMA5D8DP20Q


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PDF OD-523 OD-323 OD323-2-1 SC-76) OD-123FL OT-723 OT-23 OT-89 diagram LG LCD TV circuits schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic
2014 - Not Available

Abstract:
Text: DMN10H099SK3 Green  100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(on) max 100V 80mΩ @ VGS = 10V 99mΩ @ VGS = 6V  Low RDS(ON , complementary MOSFET features Lead-Free Finish; RoHS compliant (Note 1 & 2)  NEW PRODUCT NEW , TC = +25°C TC = + 70 °C NEW PRODUCT NEW PRODUCT Continuous Drain Current (Note 5) VGS = 10V , specified.) Characteristic Symbol TC = +25°C Total Power Dissipation (Note 5) PD TC = + 70Â


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PDF DMN10H099SK3 DS37263
2008 - "Zener Diode 0805"

Abstract:
Text: MMBT3904LT1G N-channel MOSFET TO- 252 40A, 100V Vishay SUD40N10-25-E3 Q7 P channel MOSFET TO- 252 19A, 60V Vishay SUD19P0660L- E3 Q9 N channel MOSFET SOT23 200 mA, 60V R3, R12, R15 , , J6,-J8, J13, J14, J16 Jumper L1 22 µH Q5, Q6 N-channel MOSFET TO- 252 40A, 100V Q9 N channel MOSFET SOT23 200 mA, 60V R6 Resistor 2512 0.06 R7, R8 R9 NSC Vishay , : Enables LM3423. J2 Current Limit (IS) OPEN: Disables MOSFET RDS(ON) current sensing "Q5". CLOSED


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PDF LM3423 AN-1872 "Zener Diode 0805" high voltage resistor MMBT3904LT1G SUD40N10-25 TP10 zener diode 0805
MOSFET 55N03

Abstract:
Text: TAIW AN s TSM55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO- 252 , r$ D rivers GateO- Ordering Information P a rt N o. TSM 55N Û 3C P RO Package P a c k in g TO - 252 2.5K pcs /1 3 " Reel Ô S o u rc e N -C hannel M O SFET A bsolute Maxim um Rating (Ta = 25°C unless otherw ise noted) P a r a m e te r S ym bol L im it U n it , Pulse Drain to S ource A valanche Energy (VDD = 100V , VGs=10V, Ias=2A, L=10m H , RG=25Q) M axim um Pow


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PDF TSM55N03 O-252 MOSFET 55N03
2009 - Full-bridge LLC resonant converter

Abstract:
Text: MOSFET Q1 is on state, resonant inductor current flows through the channel of MOSFET Q1. As Ir begins , highly increased resonant current during t0~t1 flows through channel of MOSFET Q2. Since output diode D1 , high. (d) t3-t4 During t4~t5, the MOSFET Q1 channel turns on and a large shoot-through current , , resonant current flows through the channel of MOSFET Q1 and secondary diode D1 conducts. Lm is not , Overload Condition During t4~t5, MOSFET Q2 channel turns on and a large shoot-through current flows due


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PDF AN-9067 Full-bridge LLC resonant converter LLC resonant converter application note resonant converter for welding Resonant Half-Bridge converter AN-9067 LLC resonant converter transformer fdpf10n50 LLC resonant transformer smps resonant llc FDPF10N50FT
2011 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD UFR9120 Preliminary Power MOSFET P CHANNEL POWER MOSFET DESCRIPTION The UTC UFR9120 is a P-channel power MOSFET using UTC’s advanced processing technology to , Unisonic Technologies Co., Ltd Package TO- 252 1 G TO- 252 G Pin Assignment 2 3 D S D S Packing Tape Reel Tube 1 of 6 QW-R502-570.a UFR9120 Preliminary Power MOSFET , QW-R502-570.a UFR9120 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless


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PDF UFR9120 UFR9120 UFR9120L-TN3-R UFR9120G-TN3-R UFR9120L-TN3-T UFR9120G-TN3-T O-252 QW-R502-570
igbt inverter welder schematic

Abstract:
Text: B: TO-263 C: SuperSOT-6 D: TO- 252 G: SC70-6 H: TO-247 I: TO-262 M: SO16 N: SuperSOT-3 P : TO , .pg MOSFET Selection by Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , , 600V Current Rating 3~6A 500V, 600V 7~12A FQP4N50 FQP3N60 MOSFET FQP5N50 FQP6N50 , IGBT TURN-OFF ENERGY EOFF = 179µJ ICE = 2A/DIV FALL TIME TF = 73ns VCE = 100V /DIV SMPS , = 5V/DIV VCE = 100V /DIV · Increase operating frequency and reduce transformer/filter cost ·


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