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1995 - an104 siliconix

Abstract: TO-226A U421 jfet Siliconix AN104 SILICONIX 2N4391 SST310 spice model jfet spice model J202 J176 2N4416
Text: AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. SPICE is the de facto standard for simulating circuit performance. Abundant libraries are available, but many of them were derived from data sheets. Data sheets seldom define the productat best they offer


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PDF AN104 2N5116 SST176 an104 siliconix TO-226A U421 jfet Siliconix AN104 SILICONIX 2N4391 SST310 spice model jfet spice model J202 J176 2N4416
Not Available

Abstract: No abstract text available
Text: ons, or oxner data. T. AUBIN REFERENCE 7/19/99 / DATE ^ -, EAR 967292-0 APPROVER CAD


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PDF MIL-P-19468. \PETE\MCX\91 3\ASSY\119J\51AX000C
1996 - HC-49/pspice model

Abstract: J111 spice model U310 spice model jfet spice model GASFET 2n4416 U310 J176 SST310 spice model 2n4391 spice
Text: AN104 SPICE Parameters for Select JFETs Ed Oxner The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. Introduction SPICE is the de facto standard for simulating circuit performance. Abundant libraries are available, but many of them were derived from data sheets. Data sheets seldom define the product-at best they offer minimum performance


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PDF AN104 SST176 2N5116 01-Sep HC-49/pspice model J111 spice model U310 spice model jfet spice model GASFET 2n4416 U310 J176 SST310 spice model 2n4391 spice
Severns

Abstract: Oscillation mosfet zener diode capacitance POWER MOSFET APPLICATION NOTE ED31 diode parallel connection of MOSFETs R. Severns "Controlling Oscillation in APT9901 Zener Diode frequency Zener Diode high frequency applications
Text: between gate and source does not control parasitic oscillation. References [1] E. Oxner ; "Analyzing , , E. Oxner ; "Parallel Operation of Power MOSFETs", Technical Article TA 84-5, Siliconix Inc. [7] B


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PDF APT9901, ED-31, Severns Oscillation mosfet zener diode capacitance POWER MOSFET APPLICATION NOTE ED31 diode parallel connection of MOSFETs R. Severns "Controlling Oscillation in APT9901 Zener Diode frequency Zener Diode high frequency applications
siliconix FET DESIGN

Abstract: FETs in Mixers Ed Oxner FET U310 Ed Oxner oscillator U310 Siliconix "fet" Ed Oxner siliconix DESIGN idea
Text: o lb DESIGN IDEA High-Performance FETs In Low-Noise VHF Oscillators Ed Oxner Most communications receivers are limited in their dynamic range because of saturation in the early stages of RF amplifiers or mixers. However, some receiver designs are available which overcome this limitation by using parametric amplifiers and converters to achieve spectacular increases in dynamic range. There still remain certain limitations in dynamic range which cannot be remedied by parametric devices. In these cases, the problem lies


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1996 - FET pair n-channel p-channel

Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon. Circuit Applications Getting n-type performance out of p-type FETs has meant larger area geometries with correspondingly higher inter-electrode capacitances. Consequently, a truly complementary


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PDF AN804 21-Jun-94 VP0300L O-226AA VN0300L TP0610L 2N7000 FET pair n-channel p-channel FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
FET U310

Abstract: uhf amplifier design U310 U310 fet siliconix FET DESIGN Ed Oxner siliconix DESIGN idea u310 siliconix fet 652 h siliconix fet
Text: H Siliconix DESIGN IDEA Wideband UHF Amplifier with High-Performance FETs Ed Oxner INTRODUCTION A new freedom in UHF amplifier design is possible with high-performance "Super FETs" such as the Siliconix U310 Junction FET. Typical advantages include a closely-matched 75 ohm input for extremely low return loss in cable systems, and high spurious response rejection with the 3rd order IM intercept measured at +29 dB.O Additionally, the high common-gate forward transconduc-tance of the U310 (20,000


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1995 - 2n7000 complement

Abstract: mosfet discrete totem pole drive CIRCUIT VP0300L 2n7000 equivalent 2n7000+complement TP0610 Si9958DY Si9942DY VP2020L 2N7000
Text: AN804 Siliconix PChannel MOSFETs, the Best Choice for HighSide Switching Ed Oxner Circuit Applications Historically, pchannel FETs were not considered as useful as their nchannel counterparts. The higher resistivity of ptype silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to ntype silicon. Switching GroundReturn Loads Getting ntype performance out of ptype FETs has meant larger area geometries with correspondingly higher interelectrode capacitances


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PDF AN804 VP0300L O226AA VN0300L TP0610L 2N7000 VP2020L 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP0300L 2n7000 equivalent 2n7000+complement TP0610 Si9958DY Si9942DY VP2020L 2N7000
1995 - AN601

Abstract: SMP30N10 john worman bipolar transistor tester
Text: AN601 Siliconix Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to unclamped inductive switching. Historically, MOSFET manufacturers chose to , , 1977). [2] Edwin S. Oxner , Static and Dynamic dV/dt Characteristics of Power MOSFETs," PCI


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PDF AN601 ED-29, HDL-TR-1978 AN601 SMP30N10 john worman bipolar transistor tester
1996 - SMP30N10

Abstract: MOSPOWER Design 1983 bipolar transistor tester avalanche mode transistor US ARMY TRANSISTOR CROSS SILICONIX siliconix FET DESIGN uis test AN601 MOSPOWER Design Data Book 1983 5510E UIS tester
Text: AN601 Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to unclamped inductive switching. Historically, MOSFET manufacturers chose to quantify ruggedness, not , ). 2. Edwin S. Oxner , "Static and Dynamic dV/dt Characteristics of Power MOSFETs," PCI Proceedings


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PDF AN601 15-Feb-94 SMP30N10 MOSPOWER Design 1983 bipolar transistor tester avalanche mode transistor US ARMY TRANSISTOR CROSS SILICONIX siliconix FET DESIGN uis test AN601 MOSPOWER Design Data Book 1983 5510E UIS tester
5510E UIS tester

Abstract: bipolar transistor tester US ARMY TRANSISTOR CROSS SILICONIX AN601 SMP30N10 oxner siliconix an601
Text: AN601 Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to unclamped inductive switching. Historically, MOSFET manufacturers chose to quantify ruggedness, not , Edwin S. Oxner , "Static and Dynamic dV/dt Characteristics of Power MOSFETs," PCI Proceedings, 132­42


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PDF AN601 15-Feb-94 5510E UIS tester bipolar transistor tester US ARMY TRANSISTOR CROSS SILICONIX AN601 SMP30N10 oxner siliconix an601
Granberg

Abstract: motorola LM335 ericsson rf AN1643 ericsson 3108 LM335 Granberg dye Ericsson Base Station MOTOROLA small signal transistors
Text: . Bell, Operational Amplifiers, Prentice Hall, 1990. 5. E. Oxner , FET Technology and Application


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PDF AN1643. Granberg motorola LM335 ericsson rf AN1643 ericsson 3108 LM335 Granberg dye Ericsson Base Station MOTOROLA small signal transistors
1996 - N-Channel Depletion-Mode MOSFET

Abstract: P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering n mosfet depletion depletion p mosfet
Text: AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the MOSFET permits the added flexibility of allowing the gate potential not only to be higher but to be of either polarity. Earlier, small-signal MOSFETs were classed as being quite sensitive to ESD. With the introduction of the ND2012 and


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PDF AN901 ND2012 ND2406 2N692) 21-Jun-94 N-Channel Depletion-Mode MOSFET P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering n mosfet depletion depletion p mosfet
1995 - N-Channel Depletion-Mode MOSFET

Abstract: normal scr operation depletion-mode depletion mode current limiter n channel depletion MOSFET mosfet vs SCR depletion mode mosfet mosfet modern applications voltage regulator mosfet 1,2 AN901
Text: AN901 Siliconix DepletionMode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction MOSFET may also perform in the enhancementmode. The nchannel enhancementmode MOSFET (Figure 1c), requires a positivepolarity gate voltage referenced to the source to provide current conduction. A principal advantage of the depletionmode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletionmode structure, the MOSFET permits


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PDF AN901 ND2012 ND2406 2N692) N-Channel Depletion-Mode MOSFET normal scr operation depletion-mode depletion mode current limiter n channel depletion MOSFET mosfet vs SCR depletion mode mosfet mosfet modern applications voltage regulator mosfet 1,2 AN901
2005 - 70572

Abstract: bipolar transistor tester SMP30N10 "Integrated Technology corporation" AN601 RPKC MOSPOWER Design Data Book 1983 uis test
Text: (Wiley-Interscience: New York, 1977). Edwin S. Oxner , "Static and Dynamic dV/dt Characteristics of Power MOSFETs,"


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PDF AN601 15-Feb-94 70572 bipolar transistor tester SMP30N10 "Integrated Technology corporation" AN601 RPKC MOSPOWER Design Data Book 1983 uis test
AN-1084

Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 200V depletion N-Channel jfet 500V depletion n channel depletion MOSFET
Text: Applications," Edwin S. Oxner "Power MOSFETs - Theory and Applications," Duncan A. Grant and John Gower


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PDF AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 200V depletion N-Channel jfet 500V depletion n channel depletion MOSFET
1997 - HEXFET Power MOSFET designer manual

Abstract: BJT Gate Drive circuit MOSFET designer manual BJT with i-v characteristics POWER BJTs BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual TRANSISTORS BJT with low gate voltage
Text: Semiconductor Devices," S. M. Sze "Power FETs and Their Applications," Edwin S. Oxner "Power MOSFETs - Theory


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1997 - HEXFET Power MOSFET designer manual

Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT Gate Drive circuit BJT with i-v characteristics BJT with V-I characteristics TRANSISTORS BJT with low gate voltage circuits using BJT
Text: Applications," Edwin S. Oxner "Power MOSFETs - Theory and Applications," Duncan A. Grant and John Gower


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2001 - schematic diagram welding inverter

Abstract: Three phase inverter mosfet Diagram mosfet based power inverter project schematic diagram for welding inverter mosfet base induction heat circuit schematic diagram induction heating schematic diagram welding inverter control common schematic diagram welding inverter full bridge schematic diagram welding inverter control Power MosFet inverter schematic diagram
Text: Wiley & Sons, New York 1989 5. E. Oxner , "Power FETS and Their Applications", Prentice-Hall Inc


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Granberg

Abstract: AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Building push-pull multioctave, VHF power amplifiers Design of H. F. Wideband Power Transformers 300w amplifier rf power transformers
Text: , Combiners and Splitters," Proceedings of RF Expo, February 1986. 3. Edwin S. Oxner , "Controlling Oscillation


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PDF AR305/D Granberg AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Building push-pull multioctave, VHF power amplifiers Design of H. F. Wideband Power Transformers 300w amplifier rf power transformers
1994 - dv4 mosfets

Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet CA3280 AN7254 Power MOSFET Switching Waveforms A New Insight n channel depletion MOSFET mosfet cross reference
Text: ] "Correlating the Charge-Transfer Characteristics of Power MOSFETs with Switching Speed," E. Oxner , Proc


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PDF AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet CA3280 Power MOSFET Switching Waveforms A New Insight n channel depletion MOSFET mosfet cross reference
1999 - POWER MOSFET APPLICATION NOTE

Abstract: depletion mode ramp generator high power pulse generator with mosfet vertical JFET RFM15N15 RFM10N15L CA3280 CA3240E AN7254 2N4036
Text: Switching Speed," E. Oxner , Proc. Powercon 9, April 1982. 5. Substantially different lateral and


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PDF 100nm POWER MOSFET APPLICATION NOTE depletion mode ramp generator high power pulse generator with mosfet vertical JFET RFM15N15 RFM10N15L CA3280 CA3240E AN7254 2N4036
FETs in Balanced Mixers Ed Oxner

Abstract: ecom-2989 fet j310 j310 fet FET U310 relcom bt9 FETs in Mixers Ed Oxner fets in balanced mixers U310 fet K300 ferrite
Text: s Siliconix APPLICATION NOTE FETs in Balanced Mixers Ed Oxner INTRODUCTION When high-performance, high-frequency junction field-effect transistors (J FETs) are used in the design of active balanced mixers, the resulting FET mixer circuit demonstrates clearly superior characteristics when compared to its popular passive counterpart employing hot-carrier diodes. Comparison of several types of mixers is made in Table I. The advantages and disadvantages of semiconductor devices currently used in various mixer circuits are


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PDF ECOM-2989, FETs in Balanced Mixers Ed Oxner ecom-2989 fet j310 j310 fet FET U310 relcom bt9 FETs in Mixers Ed Oxner fets in balanced mixers U310 fet K300 ferrite
2001 - AN-7501

Abstract: 2n4036 equivalent ca3240 P-channel 200V mos fet 2N4036 RFM15N15 RFM10N15L RFM10N15 CA3280 dv4 mosfets
Text: Switching Speed," E. Oxner , Proc. Powercon 9, April 1982. 5. Substantially different lateral and


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PDF 100nm AN-7501 2n4036 equivalent ca3240 P-channel 200V mos fet 2N4036 RFM15N15 RFM10N15L RFM10N15 CA3280 dv4 mosfets
qml-38535

Abstract: CDFP4-F24
Text: 5.5 V All 5.5 V 1 +0.5 HA ror an oxner VIN = VCC or inputs GND 2, 3 +5.0 M, 0, L, R V


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PDF MIL-BUL-103. MIL-BUL-103 RDQH70Ã 001b42b qml-38535 CDFP4-F24
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