MG250YD2YMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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TPHR7404PU
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H |
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XPQR8308QB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL |
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XPQ1R00AQB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL |
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