SSM10N961L
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 |
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TCTH022BE
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Toshiba Electronic Devices & Storage Corporation
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function |
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TCTH021BE
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Toshiba Electronic Devices & Storage Corporation
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type |
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TCTH012BE
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Toshiba Electronic Devices & Storage Corporation
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function |
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TCTH011BE
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Toshiba Electronic Devices & Storage Corporation
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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