The Datasheet Archive

oh10003 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
OH10003 OH10003 ECAD Model Panasonic GaAs Hall Device Original PDF
OH10003 OH10003 ECAD Model Panasonic GaAs Hall Device Original PDF
OH10003 OH10003 ECAD Model Panasonic GaAs Hall Devices Original PDF

oh10003 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - hall sensor 3hr

Abstract: hall sensor 4-pin phonograph hall sensor 4pin marking KR 4pin 4 pin hall marking OH10003 4 pin hall marking R
Text: GaAs Hall Devices OH10003 GaAs Hall Device Magnetic sensor Unit : mm + 0.2 2.8 - 0.3 0.65 ± 0.15 I Features · Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) · Input resistance: typ. 0.85 k · Satisfactory linearity of GaAs hall voltage with respect to the magnetic field · Small temperature coefficient of the hall voltage: - 0.06%/°C · Sealed in the Mini type (4-pin) package. Allowing , 3IQ 3IR KQ KR 130 to 158 142 to 170 -2 to -12 3KQ 3KR 1 OH10003 GaAs Hall


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PDF OH10003 hall sensor 3hr hall sensor 4-pin phonograph hall sensor 4pin marking KR 4pin 4 pin hall marking OH10003 4 pin hall marking R
2001 - hall sensor 3hr

Abstract: marking KR 4pin OH003 OH10003 hall sensor TYP 688 panasonic device marking examples
Text: GaAs Hall Devices OH10003 (OH003) GaAs Hall Device Magnetic sensor Unit : mm + 0.2 2.8 - 0.3 0.65 ± 0.15 I Features · Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) · Input resistance: typ. 0.85 k · Satisfactory linearity of GaAs hall voltage with respect to the magnetic field · Small temperature coefficient of the hall voltage: - 0.06%/°C · Sealed in the Mini type (4 , Note) The part number parenthesis shows conventional part number. 687 OH10003 GaAs Hall


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PDF OH10003 OH003) hall sensor 3hr marking KR 4pin OH003 OH10003 hall sensor TYP 688 panasonic device marking examples
2001 - 4G2 hall

Abstract: OH003 hall sensor 3hr OH10003 hall sensor Panasonic GaAs hall sensor TYP 688
Text: GaAs Hall Devices OH10003 (OH003) GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 ­0.05 I Features 1.9±0.1 0.16+0.1 ­0.06 (0.95) (0.95) 4 5° R(0.5) 2.8+0.2 ­0.3 3 1.5+0.2 ­0.3 · Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) · Input resistance: typ. 0.85 k · Satisfactory linearity of GaAs hall voltage with respect to the magnetic field · Small , parenthesis shows conventional part number. 687 OH10003 GaAs Hall Devices PD T a RIN Ta VH


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PDF OH10003 OH003) 4G2 hall OH003 hall sensor 3hr OH10003 hall sensor Panasonic GaAs hall sensor TYP 688
2001 - 4G2 hall

Abstract: OH10003 OH003 oh-003
Text: GaAs Hall Devices OH10003 (OH003) GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 ­0.05 I Features 1.9±0.1 0.16+0.1 ­0.06 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 1.5+0.2 ­0.3 4 R(0.5) (1.45) (0.8) 0 to 0.1 · Various hall motor (VCR, phonograph, VD, CD, and FDD) · Automotive equipment · Industrial equipment · Applicable to wide-varying , . 687 OH10003 GaAs Hall Devices PD T a RIN Ta VH Ta 200 240 1 600 B = 1 kG


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PDF OH10003 OH003) 4G2 hall OH10003 OH003 oh-003
2001 - 4G2 hall

Abstract: hall sensor 40 L
Text: GaAs Hall Devices OH10003 (OH003) GaAs Hall Device Magnetic sensor I Features · Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) · Input resistance: typ. 0.85 k · Satisfactory linearity of GaAs hall voltage with respect to the magnetic field · Small temperature coefficient of the hall voltage: - 0.06%/°C · Sealed in the Mini type (4-pin) package. Allowing automatic insertion through the , 0.4±0.2 0.4+0.1 ­0.05 (1.45) (0.8) 687 OH10003 PD T a 200 180 GaAs Hall Devices VH


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PDF OH10003 OH003) 4G2 hall hall sensor 40 L
MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: MA998 MAZ1024U OH10003 OH10004 OH10008 OH10009 OH10010 OH10017 Alternative - MA3D749


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PDF MN101C01C MN15224 MN101C01D MN15226 MN101C027 MN15261 MN101C03A MN101C38A MN15263 MN101C06D MN1873287 an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
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