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LM118AMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1077CIH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1055CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1056CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1077CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1222MH Linear Technology IC OP-AMP, MBCY, Operational Amplifier

ofdm amplifier Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - msc 5530

Abstract: s-parameters of an 60GHz transistor LX5530 33EVM LX5530LQ-TR msc5530
Text: 6.0GHz Power Amplifier P RODUCTION D ATA S HEET EVM VS. OFDM PACKET DUTY CYCLE 99% 8.0 7.0 6.0 64 , Page 5 LX5530 TM ® InGaP HBT 4.5 ­ 6.0GHz Power Amplifier P RODUCTION D ATA S HEET OFDM , LX5530 TM ® InGaP HBT 4.5 ­ 6.0GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION , Power Gain up to ~ 33dB for VC=5V, Icq = 250mA Power Gain > ~28dB across 4.95.85GHz OFDM Mask , APPLICATIONS The LX5530 is a power amplifier optimized for the FCC Unlicensed National Information


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PDF LX5530 250mA 85GHz 25dBm -50dBc 30MHz 23dBm 21dBm msc 5530 s-parameters of an 60GHz transistor LX5530 33EVM LX5530LQ-TR msc5530
2007 - High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout GaN amplifier GaN photo diode CGH35015S operational amplifier discrete schematic CGH27015
Text: circuit providing the highest reported performance for a WiMAX power amplifier . Here are several WiMAX amplifier designs delivering from two to ten watts OFDM power, using various devices in a , linearity under OFDM modulation. CGH35015S-Based Amplifier Design The CGH35015S employs an unmatched , taken under 802.16-2004 OFDM (3.5 MHz Figure 6 · Photograph of a demonstration amplifier using , GHz. The design of the demonstration amplifier circuits includes the need to provide higher


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2010 - marking cck

Abstract: No abstract text available
Text: SE2609L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g or IEEE802.11n) Access Points, PCMCIA, PC cards Product Description The SE2609L is a 2.4 GHz power amplifier designed for use in the 2.4 , , 802.11g, OFDM 54 Mbps o 22 dBm, ACPR < -32 dBc, 802.11b 5.0V Supply Operation with 2.85V reference 28 dB , DST-00369 Rev 1.5 Nov-01-2010 Confidential 1 of 10 SE2609L 2.4 GHz Power Amplifier with


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PDF SE2609L IEEE802 SE2609L DST-00369 Nov-01-2010 marking cck
2003 - RAYTHEON

Abstract: RMPA2550-252 54Mbps IC155
Text: Linear Power Amplifier ADVANCED INFORMATION Description Features Absolute Ratings1 The RMPA2550-252 is a dual frequency band power amplifier designed for high performance WLAN applications in , current when supply voltage is disabled. 5. Percentage increase above system noise floor, 802.11g, OFDM , 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Electrical , when supply voltage is disabled. 5. Percentage increase above system noise floor, 802.11a, OFDM , 54


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PDF RMPA2550-252 RMPA2550-252 10dBm 16dBm 20dBm 14dBm 17dBm 21dBm 24dBm RAYTHEON 54Mbps IC155
2010 - SiGe 2527L

Abstract: SIGE SEMICONDUCTOR 2527l 2527L QAD-00045 00211 se2597
Text: SE2597L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g) OFDM 2.4 GHz WLAN (IEEE802.11n) Access Points, PCMCIA, PC cards Product Description The SE2597L is a 2.4 GHz power amplifier designed for , Operation o 19 dBm, EVM = 3 %, 802.11g, OFDM 54 Mbps o 23 dBm, ACPR < -32 dBc, 802.11b 28 dB Gain Integrated temperature compensated power detector Digital power amplifier enable pin (VEN) Lead Free, Halogen Free and


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PDF SE2597L IEEE802 SE2597L DST-00211 Dec-18-2010 SiGe 2527L SIGE SEMICONDUCTOR 2527l 2527L QAD-00045 00211 se2597
2005 - ofdm amplifier

Abstract: No abstract text available
Text: 7.0 Units dB dBm % dB dB Note: Measured in the CGH27015F-TB amplifier circuit, under 802.16 OFDM , Amplifier Circuit at 2.5 GHz F=2.5 GHz, 802.16-2004 OFDM , P/A=9.8 dB 5.0 EVM(2.5) 4.0 Eff(2.5) 20 25 EVM , Type 2/3. Performance of CGH27015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW = , amplifier applications. The transistor is available in ceramic, metal flange package. Package Type , Access 802.16-2004 OFDM Subject to change without notice. www.cree.com/wireless Absolute


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PDF CGH27015F CGH27015 CGH2701 CGH27015F ofdm amplifier
2010 - SIGE SEMICONDUCTOR 2527l

Abstract: 2527L SE2598L SIGE 2527l ofdm amplifier 2598L 00215
Text: SE2598L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g) OFDM 2.4 GHz WLAN (IEEE802.11n) Access Points, PCMCIA, PC cards Product Description The SE2598L is a 2.4 GHz power amplifier designed for , Operation o 19 dBm, EVM = 3 %, 802.11g, OFDM 54 Mbps o 23 dBm, ACPR < -32 dBc, 802.11b 28 dB Gain Integrated temperature compensated power detector Digital power amplifier enable pin (VEN) Lead Free, Halogen Free and


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PDF SE2598L IEEE802 SE2598L DST-00215 Dec-18-2010 SIGE SEMICONDUCTOR 2527l 2527L SIGE 2527l ofdm amplifier 2598L 00215
2005 - Not Available

Abstract: No abstract text available
Text: amplifier circuit, under 802.16-2004 OFDM , 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 , amplifier applications. The transistor is available in both screwdown, flange and solder-down, pill packages , 1.8 – Dec • 25 % Efficiency at 2.5 % EVM • WiMAX Fixed Access 802.16-2004 OFDM â , , PAVE = 2.0 W OFDM PAVE Input Capacitance CGS – 5.00 – pF VDS = 28 V, Vgs = -8 , Under 802.16-2004 OFDM , 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst


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PDF CGH27015 CGH27015 CGH2701 27015P
2005 - Not Available

Abstract: No abstract text available
Text: 6.0 7.0 7.0 dB Note: Measured in the CGH27015F-TB amplifier circuit, under 802.16 OFDM , . Performance of CGH27015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW = 3.5 MHz , amplifier applications. The transistor is available in ceramic, metal flange package. Package Type , Efficiency at 2.0 W PAVE OFDM • WiMAX Fixed Access 802.16-2004 OFDM Subject to change without , - Y No damage at all phase angles, VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W OFDM PAVE Input


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PDF CGH27015 CGH27015 CGH2701
2005 - Not Available

Abstract: No abstract text available
Text: 6.0 7.0 7.0 dB Note: Measured in the CGH27015F-TB amplifier circuit, under 802.16 OFDM , Broadband Amplifier Circuit at 2.5 GHz F=2.5 GHz, 802.16-2004 OFDM , P/A=9.8 dB 5.0 25 EVM(2.5) Eff , . Performance of CGH27015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW = 3.5 MHz , amplifier applications. The transistor is available in ceramic, metal flange package. Package Type , OFDM • WiMAX Fixed Access 802.16-2004 OFDM Subject to change without notice. www.cree.com


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PDF CGH27015 CGH27015 CGH2701
2008 - Not Available

Abstract: No abstract text available
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Data Sheet SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: • High Gain: – Typically 27-28 dB gain , €“ >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz – Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz – Meets 802.11g OFDM ACPR requirement up to 22 dBm across , P1dB (Pulsed single-tone signal) across 4.9-5.8 GHz – Meets 802.11a OFDM ACPR requirement up to 22


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PDF SST13LP02 SST13LP022 16F-6, S71304-03-000
2003 - Not Available

Abstract: No abstract text available
Text: LX5512E ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3 % , makes the LX5512E an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g , 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low , power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is


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PDF LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g
2005 - amplifier circuit

Abstract: CGH27015F-TB ofdm amplifier TRANSISTOR A98 CGH27015-TB CGH27015F CGH27015 470PF 10UF cree rf
Text: Type 2/3. Performance of CGH27015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW , amplifier applications. The transistor is available in ceramic, metal flange package. Package Type , 6.0 7.0 7.0 dB Note: Measured in the CGH27015F-TB amplifier circuit, under 802.16-2004 OFDM , 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59 , May · WiMAX Fixed Access 802.16-2004 OFDM · WiMAX Mobile Access 802.16e OFDMA Subject


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PDF CGH27015F CGH27015 CGH2701 CGH27015F amplifier circuit CGH27015F-TB ofdm amplifier TRANSISTOR A98 CGH27015-TB 470PF 10UF cree rf
2006 - MRD 532

Abstract: video transmitter 2.4 GHz JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K 5805
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: · High Gain: ­ Typically 27-28 , : ­ >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz ­ Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz ­ Meets 802.11g OFDM ACPR requirement up to 22 dBm across , (Pulsed single-tone signal) across 4.9-5.8 GHz ­ Meets 802.11a OFDM ACPR requirement up to 22 dBm


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PDF SST13LP02 SST13LP022 S71304-01-000 MRD 532 video transmitter 2.4 GHz JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K 5805
2006 - MRD 532

Abstract: 24-wqfn-4x4-QD-1 JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K SST13LP022
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: · High Gain: ­ Typically 27-28 , : ­ >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz ­ Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz ­ Meets 802.11g OFDM ACPR requirement up to 22 dBm across , (Pulsed single-tone signal) across 4.9-5.8 GHz ­ Meets 802.11a OFDM ACPR requirement up to 22 dBm


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PDF SST13LP02 SST13LP022 S71304-01-000 MRD 532 24-wqfn-4x4-QD-1 JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K
2006 - Schematics 5250

Abstract: GP 035 schematic 5250 JESD22 C101 AN1955 A115 A114 A113 F QFN 3X3
Text: Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG5004NR2 WLAN Power Amplifier Designed for , - 24 dB Typical @ f = 5.25 GHz, Class AB · EVM - 3% @ Pout = 18 dBM @ PAE = 10% under OFDM , 64 QAM , AMPLIFIER InGaP HBT CASE 1483 - 01 QFN 3x3 Table 1. Maximum Ratings Rating Symbol Value , - 23 - dBm Power Gain (Pout = 18 dBm, OFDM , 64 QAM, 54 Mbps) Gp - 24 - dB Error Vector Magnitude (Pout = 18 dBm, OFDM , 64 QAM, 54 Mbps) EVM - 3 - %


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PDF MMG5004N MMG5004NR2 Schematics 5250 GP 035 schematic 5250 JESD22 C101 AN1955 A115 A114 A113 F QFN 3X3
Not Available

Abstract: No abstract text available
Text: Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT ARCHIVE INFORMATION ARCHIVE INFORMATION , Power Gain— 24 dB Typical @ f = 5.25 GHz, Class AB ! EVM — "3% @ Pout = 18 dBM @ PAE = 10% under OFDM , P1dB — 23 — dBm Power Gain (Pout = 18 dBm, OFDM , 64 QAM, 54 Mbps) Gp — 24 — dB Error Vector Magnitude (Pout = 18 dBm, OFDM , 64 QAM, 54 Mbps) EVM — 3 Â


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PDF MMG5004N MMG5004NR2
2005 - transistor smd f36

Abstract: CGH35015 CGH35015F 10UF 33UF CGH35015-TB tRANSISTOR 2.7 3.1 3.5 GHZ cw
Text: Performance of CGH35015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW = 3.5 MHz , makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is , 6.0 13.0 9.0 dB Input Return Loss Note: Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM , 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol , 2007 Rev 1.6 ­ Mar · 15 W Typical P3dB · WiMAX Fixed Access 802.16-2004 OFDM Subject to


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PDF CGH35015F CGH35015F CGH3501 transistor smd f36 CGH35015 10UF 33UF CGH35015-TB tRANSISTOR 2.7 3.1 3.5 GHZ cw
2008 - QAM-64

Abstract: No abstract text available
Text: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier Product Features · 2.3 ­ 2.9 GHz · 23 dB Gain · , broadband driver amplifier in a surface mount package. The two-stage amplifier has 23 dB of gain, while , targeted for use in a configuration for the stage amplifier in 802.16 WiMAX or WiBro basestations where , Ordering Information Part No. AH314 AH314 ­PCB Description 2.3-2.9 GHz WiMAX 2W Driver Amplifier , Amplifier Typical Device Data S-Parameters (VCC = +5 V, ICC = 600 mA, T = 25 °C, calibrated to device


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PDF AH314 AH314 JESD22-C101 J-STD-020 1-800-WJ1-4401 QAM-64
2008 - Not Available

Abstract: No abstract text available
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Data Sheet Features: · High Gain: ­ Typically 27-28 dB gain , P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz ­ Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz ­ Meets 802.11g OFDM ACPR requirement up to 22 dBm across 2.4-2.5 GHz ­ Added , signal) across 4.9-5.8 GHz ­ Meets 802.11a OFDM ACPR requirement up to 22 dBm across 4.9-5.8GHz ­ Added


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PDF SST13LP02 SST13LP022 S71304-02-000
2008 - JEP95

Abstract: SST13LP02 SST13LP02-QDF SST13LP02-QDF-K
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Data Sheet SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: · High Gain: ­ Typically 27-28 dB gain , P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz ­ Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz ­ Meets 802.11g OFDM ACPR requirement up to 22 dBm across 2.4-2.5 GHz ­ , single-tone signal) across 4.9-5.8 GHz ­ Meets 802.11a OFDM ACPR requirement up to 22 dBm across 4.9-5.8GHz


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PDF SST13LP02 SST13LP022 16F-6, S71304-03-000 JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K
2006 - Not Available

Abstract: No abstract text available
Text: Heterojunction Bipolar Transistor Technology (InGaP HBT) WLAN Power Amplifier Designed for 802.11a applications , 5.25 GHz, Class AB · EVM - 3% @ Pout = 18 dBM @ PAE = 10% under OFDM , 64 QAM, 54 Mbps · High Gain , mm, 7 inch Reel. MMG5004NR2 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT , , Characteristic Output Power at 1dB Compression, CW Power Gain (Pout = 18 dBm, OFDM , 64 QAM, 54 Mbps) Error Vector Magnitude (Pout = 18 dBm, OFDM , 64 QAM, 54 Mbps) Total Current (Pout = 18 dBm, OFDM , 64 QAM, 54 Mbps


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PDF MMG5004N MMG5004NR2 MMG5004N
2008 - s parameters 4ghz

Abstract: 12923 AH314G AH314-G
Text: GHz WiMAX 2W Driver Amplifier Product Description The AH314 is a high dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 23 dB of gain, while achieving , for use in a configuration for the driver stage amplifier in 802.16 WiMAX or WiBro basestations where , GHz WiMAX 2W Driver Amplifier 2.4-2.7 GHz Evaluation Board Operation of this device above any of , . PIN_Vbias1 GND / NC RF IN RF IN AH314 Gain 30 2.3-2.9 GHz WiMAX 2W Driver Amplifier S-Parameters


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PDF AH314 AH314 JESD22-C101 J-STD-020 1-800-WJ1-4401 s parameters 4ghz 12923 AH314G AH314-G
2007 - AH315

Abstract: AH315-PCB JESD22-A114 dRIVER AMPLIFIER AT 5GHz
Text: AH315 3.3-3.8 GHz WiMAX 2W Driver Amplifier · EVM <2.5 %@ 25 dBm Pout · Internal Active Bias , amplifier in 802.16 WiMAX basestations where high linearity and medium power is required. Typical , dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 25 dB , Driver Amplifier 3.4-3.6 GHz Evaluation Board Standard T/R size = 500 pieces on a 7" reel , AH315 3.3-3.8 GHz WiMAX 2W Driver Amplifier Typical Device Data S-Parameters (VCC = +5 V, ICC = 600


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PDF AH315 AH315 JESD22-A114 J-STD-020 1-800-WJ1-4401 AH315-PCB JESD22-A114 dRIVER AMPLIFIER AT 5GHz
2008 - AH315-G

Abstract: No abstract text available
Text: 3.3-3.8 GHz WiMAX 2W Driver Amplifier Product Description The AH315 is a high dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 25 dB of gain, while achieving , in a configuration for the driver stage amplifier in 802.16 WiMAX basestations where high linearity , Description 3.3-3.8 GHz WiMAX 2W Driver Amplifier 3.4-3.6 GHz Evaluation Board Specifications and , 2W Driver Amplifier S-Parameters (VCC = +5 V, ICC = 600 mA, T = 25 °C, calibrated to device leads


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PDF AH315 AH315 stD22-C101 J-STD-020 1-800-WJ1-4401 AH315-G
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