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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

of transistor sl 100 Datasheets Context Search

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SL 100 NPN Transistor

Abstract:
Text: PROVISIONS All Sprague transistor chips (dice) are 100 % D-C probe-tested to the minimum specifications , . Generic data is available on request. Visual inspection is 100 %. Examples of defects looked for include , SPRflGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS ( 100 % Probed Parameters) TYPE DESCRIPTION BVcio Min. Volts @ lc (mi) BVceo Min. Ic Volts @ (mA , 60 .01 60 10 6 .01 100 500 .01 5 50 mA TE THC-4123 THC-4124 NPN Gen. Purpose 40 30 .01 .01 30 25 1 1


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PDF THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 te 901 pnp Transistor Transistor BC413C TRANSISTOR SL 100 Transistor Data sl 100
1998 - MDA380

Abstract:
Text: BLU99/ SL UHF power transistor MDA377 8 MDA378 20 Gp 100 C handbook, halfpage , specification BLU99 BLU99/ SL UHF power transistor List of components: C1 = C12 = 33 pF multilayer , DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/ SL UHF power transistor Product , . SOT122D (BLU99/ SL ). PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is , Philips Semiconductors Product specification BLU99 BLU99/ SL UHF power transistor RATINGS


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PDF BLU99 BLU99/SL BLU99 OT122A) BLU99/SL MDA380 4312 020 36642 MDA385 "2222 352" TRANSISTOR SL 100
1998 - SL 100 NPN Transistor

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/ SL UHF power transistor Product specification , Product specification UHF power transistor BLV99/ SL LIMITING VALUES In accordance with the , Semiconductors Product specification UHF power transistor BLV99/ SL CHARACTERISTICS Tj = 25 °C. , , typical values. Philips Semiconductors Product specification UHF power transistor BLV99/ SL , , typical values. Ruggedness in class-B operation The BLV99/ SL is capable of withstanding a full load


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PDF BLV99/SL OT172D MSB007 MBB01 SL 100 NPN Transistor SL 100 NPN Transistor base emitter collector blv99 transistor sl 100
1998 - SL 100 NPN Transistor base emitter collector

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT92/ SL UHF power transistor Product specification , Philips Semiconductors Product specification UHF power transistor BLT92/ SL RATINGS Limiting , Semiconductors Product specification UHF power transistor BLT92/ SL CHARACTERISTICS Tj = 25 °C unless , transistor BLT92/ SL APPLICATION INFORMATION RF performance in CW operation (common-emitter circuit , copper-sheet 2 × 35 µm. Note 1. American Technical Ceramics capacitor type 100 A or capacitor of same quality


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PDF BLT92/SL SL 100 NPN Transistor base emitter collector mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor
1998 - 122d transistor

Abstract:
Text: UHF power transistor BLU11/ SL MDA311 4 MDA312 20 Gp (dB) handbook, halfpage 100 , DISCRETE SEMICONDUCTORS DATA SHEET BLU11/ SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/ SL , transistor BLU11/ SL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134 , Product specification UHF power transistor BLU11/ SL CHARACTERISTICS Tj = 25 °C unless otherwise


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PDF BLU11/SL OT-122D) 122d transistor SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
SL 100 NPN Transistor base emitter collector

Abstract:
Text: specification UHF power transistor BLV99/ SL FEATURES • Emitter-ballasting resistors for an optimum , BIAPX product specincation UHF power transistor BLV99/ SL LIMITING VALUES In accordance with the , Philips Semiconductors UHF power transistor BLV99/ SL N AHFR PHILIPS/DISCRETE b<ÌE J> CHARACTERISTICS , Product specification UHF power transistor BLV99/ SL N AMER PHILIPS/DISCRETE bTE D APPLICATION , as a function of drive power, typical values. Ruggedriess in class-B operation The BLV99/ SL is


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PDF BLV99/SL OT172D UB8012 OT172D 7Z94G85 SL 100 NPN Transistor base emitter collector
1998 - BLV91

Abstract:
Text: transistor BLV91/ SL List of components: C1 = C11 = 33 pF multilayer ceramic chip capacitor C2 = C3 = , DISCRETE SEMICONDUCTORS DATA SHEET BLV91/ SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/ SL , Semiconductors Product specification UHF power transistor BLV91/ SL RATINGS Limiting values in , Product specification UHF power transistor BLV91/ SL CHARACTERISTICS Tj = 25 °C unless otherwise


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PDF BLV91/SL OT-172D) BLV91 ferroxcube 1988 MDA401 mda406
transistor tt 2222

Abstract:
Text: . power transistor bSE D m 711DÔ2b OObETÛ'i TbT ■BLU99 BLU99/ SL \_ IPHIN CHARACTERISTICS Tj , transistor h5E D m 711002b 00^27^1 Slfl ■BLU99 BLU99/ SL PHIN J APPLICATION INFORMATION (part I) R.F , dielectric (er = 2,74) and a thickness of 1/16 inch. American Technical Ceramics capacitor type 100 A or , Manufacturer PHILIPS INTERNATIONAL U.H.F. power transistor bSE D ■711002t. 00^27^3 «PHIN BLU99 BLU99/ SL , U.H.F. power transistor b5E D m 711DflSb DObE?^ lb3 «PHIN BLU99 BLU99/ SL APPLICATION INFORMATION


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PDF 711002b GGb27fi7 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 4312 020 36642
Not Available

Abstract:
Text: i l ■ff BLU99 BLU99/ SL D U.H.F. power transistor APX 100 ’c (%) 50 0 , transistor bbS3^31 OD2flAT4 254 ■BLU99 BLU99/ SL APX A P P LIC A T IO N IN F O R M A T IO N , Technical Ceramics capacitor type 100 A or capacitor of same quality. I f March 1993 251 N , /32 in. * American Technical Ceramics capacitor type 100 A or capacitor of same quality. r , N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/ SL U.H.F


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PDF bbS3T31 BLU99 BLU99/SL OT122A) BLU99/SL OT122D)
sot172

Abstract:
Text: transistor BLV99/ SL philips international Fig.7 Class-B test circuit at f = 900 MHz. List of components , Product specification UHF power transistor _ _BLV99/ SL - philips international - CHARACTERISTICS , MPHIN Product specification UHF power transistor - philips international BLV99/ SL APPLICATION , . Ruggedness in class-B operation The BLV99/ SL is capable of withstanding a full load mismatch corresponding , ] 7110fl2b oobaorfl 4^3 mphin Product specification UHF power transistor BLV99/ SL philips international 0


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PDF BLV99/SL OT172 -SOT172D MDB012 7Z94685 sot172
ITT 2222 npn

Abstract:
Text: inch. * American Technical Ceramics capacitor type 100 A or capacitor of same quality. ^ March 1993 , / SL b^E » bbSBTBl 00200=15 no ■APX I 100 mm L2 [2 «.g] .u " cg> jfl JL pLS d 0 L4-C7 , (er = 2,74) and thickness of 1/32 in. American Technical Ceramics capacitor type 100 A or capacitor , N AMER PHILIPS/DISCRETE blE D ■bbäBIBl DDEßfl^D bOI ■BLU 99 BLU99/ SL IAPX Jl U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio


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PDF BLU99/SL BLU99 OT122A) BLU99/SL OT122D) ITT 2222 npn ITT 2222 A itt 2222 SL 100 NPN Transistor "2222 352" blu99 transistor 4312 020 36642 ferroxcube wideband hf choke SOT122A
1994 - SL 100 NPN Transistor

Abstract:
Text: Single-in-line SL B description The new BULDxx range of transistors have been designed specifically , package, and the TO220 pin compatible SL package. Use of the SL package allows for a 40% height saving , testing of all parameters. 1 BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED , BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power , New Ultra Low-Height SOIC Power Package q Tightly Controlled Transistor Storage Times q


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PDF BULD25D, BULD25DR, BULD25SL SL 100 NPN Transistor T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V
SL 100 NPN Transistor

Abstract:
Text: INTERNATIONAL U.H.F. power transistor fc.SE t> m 711002b □□b5t.7s Lm «phin BLT91/ SL J 0 0 ■HI , PHILIPS INTERNATIONAL bSE D B 711GÖ5ti 00L2b71 0 4^1 ■PHIN BLT91/ SL _J\_ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations , mounted on a printed wiring board. • gold metallization ensures excellent reliability. The transistor , of operation VCE V f MHz PL W GP dB VC % c.w. (class-B) 7,5 900 1,5 >6,0 >50 MECHANICAL DATA Fig


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PDF 00L2b71 BLT91/SL OT-172D) 7110fl2b D0bSb77 SL 100 NPN Transistor blt91 ferroxcube wideband hf choke International Power Sources of transistor sl 100 Philips 4312 020 sl 100 transistor TRANSISTOR SL 100
Not Available

Abstract:
Text: . power transistor BLT91/ SL J V CHARACTERISTICS Tj = 25 °C unless otherwise specified , .K power transistor BLT91/ SL 7Z97438 129 mm 7Z97439 Fig. 4 Printed wiring board and , /DISCRETE bTE bb53^31 DDaa?1 Ob? ! D L BLT91/ SL 100 <) % 50 O 0,1 0,2 , » bL.53^31 0026760 U.H.F. power transistor BLT91/ SL J 900 f(MHz) 1000 Fig. 9 , N AMER PHILIPS/DISCRETE b'lE D bbS3T31 0D2B774 565 « A P X BLT91/ SL U.H.F. POWER


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PDF bbS3T31 0D2B774 BLT91/SL OT-172D)
Not Available

Abstract:
Text: AMER PHILIPS/DISCRETE bbSB'iai 0026767 133 «A PX BLT92/ SL b'lE D UHF power transistor Fig , N AUER PHILIPS/DISCRETE bb53^31 DQ28761 715 ■IAPX BLT92/ SL bTE J > UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations , ensures excellent reliability The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads are isolated from the mounting base. QUICK REFERENCE DATA mode of operation CW


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PDF DQ28761 BLT92/SL OT122D)
D008

Abstract:
Text: TO220 pin com patible SL package. Use of the SL package allows for a 40% height saving, m aking it ideal , BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright© 1997, Power , trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running , Single-in-line PART # SUFFIX D DR SL B l= N C I= N C I= E CZ D PACKAGE (TOP VIEW) 1 2 3 4 8 = IC 7 = IC 6 =


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PDF BULD25D, BULD25DR, BULD25SL D008 SL 100 NPN Transistor
122d transistor

Abstract:
Text: BLUÎI/ SL V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily , Manufacturer PHILIPS INTERNATIONAL U.H.F. power transistor bSE D 711Dö2b □□ b2704 015 «RHIN BLU11/ SL , . RUGGEDNESS The BLU11/ SL is capable of withstanding a full load mismatch (VSWR = 50 through all phases) at P , reliability. • the device can be applied at a P(_ of max. 1,5 W when it is mounted on a printed wiring board (see Fig. 6) without an external heatsink. The transistor has a 4-lead envelope with a ceramic


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PDF OT-122D) BLU11/SL 122d transistor Si 122D 122d BLU11/Si 122D transistor 4312
ferrite 4312

Abstract:
Text: N AUER PHILIPS/DISCRETE blE D m Lb53^31 0DEÖ7Ö1 715 I BLT92/ SL IAPX UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the , x 35 Mm. * American Technical Ceramics capacitor type 100 A or capacitor of same quality. 132 May , excellent reliability The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads , common-emitter class-B circuit mode of operation VCE f PL Gp ne V MHz W dB % CW (class-B) 7.5 900 3.0 >7.0


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PDF BLT92/SL OT122D) ferrite 4312 ferrite beat philips rf choke ferrite CF-800 lb533
Si 122D

Abstract:
Text: ^31 DDEaflOS T6T ■APX U.H.F. power transistor BLU11/ SL CHARACTERISTICS Tj = 25 °C unless , N AMER PHILIPS/DISCRETE bTE 0Q2flflQ7 flSl D U.H.F. power transistor APX BLU11/ SL , The BLU11/ SL is capable of withstanding a full load mismatch (VSWR = 50 through all phases) at P(_ = , N AMER PHILIPS/DISCRETE b^Z bb53c ]31 G0Eflfl03 10b BIAPX T > BLU11/ SL J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in


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PDF bb53c G0Eflfl03 BLU11/SL OT-122D) BLU11/SL Si 122D 122d transistor BLU11/Si 122D
philips rf choke ferrite

Abstract:
Text: PHILIPS INTERNATIONAL bSE D m 711002b 00bSb7ö 1T3 ■BLT92/ SL iPHIN UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the , /32 inch; thickness of copper-sheet 2 x 35 ¡Jim. American Technical Ceramics capacitor type 100 A or , PHILIPS INTERNATIONAL UH F power transistor bSE D ■7110ä D0b2bä5 b24 ■BLT92/ SL 1PHIN , excellent reliability The transistor has a 4-fead studless envelope with a ceramic cap (SOT122D). All leads


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PDF 711002b 00bSb7Ã BLT92/SL OT122D) philips rf choke ferrite ferrite beat ferrite 4312 of transistor sl 100 International Power Sources mml 600 philips choke ferrite SL 100 NPN Transistor
122d transistor

Abstract:
Text: operation; test circuit tuned at P|_ = 2,5 W; typical values. RUGGEDNESS The BLU11/ SL is capable of , N AMER PHILIPS/DISCRETE blE D ■bb53*i31 0QEÛÔ03 10b HAPX BLU11/ SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in , a P|_ of max. 1,5 W when it is mounted on a printed wiring board (see Fig. 6) without an external heatsink. The transistor has a 4-lead envelope with a ceramic cap (SOT-122DK All leads are isolated from


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PDF BLU11/SL OT-122DK BLU11/SL 122d transistor SL 100 NPN Transistor 122d rf 2222 Scans-004952
BLU99

Abstract:
Text: 07081 U.S.A. FAX: (973) 376-8960 BLU99 BLU99/ SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio , (BLU99/ SL ). PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The , . Quality Semi-Conductors BLU99 BLU99/ SL UHF power transistor RATINGS Limiting values in accordance


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PDF BLU99 BLU99/SL BLU99 OT122A) BLU99/SL OT122D) BLU99/TDA3619/on4800
ferroxcube wideband hf choke

Abstract:
Text: N AMER PHILIPS/DISCRETE tiTE T> m bbS3T31 DDEB77M S6S ■APX BLT91/ SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations , mounted on a printed wiring board. • gold metallization ensures excellent reliability. The transistor , of operation LLJ f MHz PL W Gp dB VC % c.w. (class-B) 7,5 900 1,5 >6,0 >50 MECHANICAL DATA Fig. 1 , beryllium oxide, the dust of which is toxic. The device is entirety safe provided that the BeO disc is not


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PDF bbS3T31 DDEB77M BLT91/SL OT-172D) G02fl? ferroxcube wideband hf choke blt91 of transistor sl 100 SL 100 NPN Transistor SL 100 NPN Transistor base emitter collector SL 100 power transistor
SL 100 NPN Transistor

Abstract:
Text: PHILIPS INTF-h-! bSE D m 711002b 00b2fab4 bCH HPHIN BLT90/ SL A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the , . power transistor b5E D ■711002b 0Qb2bbö 254 «RHIN BLT90/ SL A 0 ® o o o o o 0 0 ®M2 , . The transistor has a 4-iead studless envelope with a ceramic cap (SOT-172D). All leads are isolated , ciass-B circuit.4' mode of operation VCE V f MHz PL W Go dB TÌC % c.w. (class-B) 7,5 900 0,75 >7,0 >50


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PDF 711002b 00b2fab4 BLT90/SL OT-172D) 00b2b70 SL 100 NPN Transistor transistor tt 2222 SL 100 power transistor 43120203664 ferroxcube wideband hf choke International Power Sources Philips 119
SL 100 NPN Transistor

Abstract:
Text: VIEW) NC - No internal connection SL PACKAGE (TOP VIEW) PACKAGE PART # SUFFIX Small-outline D Small-outline taped and reeled DR Single-in-line SL device symbol 3 description The new BULDxx range of , established 8 pin low height surface mount D package, and the TO-220 pin compatible SL package. Use of the SL , e TRAN SYS EUCTRONICS LIMITED BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH , Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode


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PDF BULD25D, BULD25DR, BULD25SL T0220 SL 100 NPN Transistor T1 SL 100 NPN Transistor TRANSISTOR sl 100 sl 100 transistor of transistor sl 100 "Safe Operating Area and Thermal Design" silicon NPN transistor Electronic ballast BULD25DR sl diode high frequency silicon transistor
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