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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

npn transistor w27 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
WSE27-3P2430

Abstract: 3P245 WSE27-3P2450 WSE27-3R2631 WSE27-3P3730 WSE27-3E2631 AWM 246 WTB27-3 Sensick Sensors WTB27-3 COMMISSIONING
Text: KD01_W27_3_en.qxd 28.07.2006 16:01 Uhr Seite 854 W27 -3 Photoelectric switches BGS Photoelectric proximity switches Photoelectric reflex switches Through-beam photoelectric switches W27 , photoelectric proximity switch can be offered with the new, unique IO-Link fieldbus link. Overview of W27 , , Easy Teach-in, simple and fast commissioning, The all-rounder W27 -3 shows its IP69K in , the W27 -3 is sector. its very wide range of applications. A choice of variants offering


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PDF W27-3 W27-3: AC-15, DC-13 WSE27-3R2631 WSE27-3P2430 3P245 WSE27-3P2450 WSE27-3R2631 WSE27-3P3730 WSE27-3E2631 AWM 246 WTB27-3 Sensick Sensors WTB27-3 COMMISSIONING
WTB27-3P2411

Abstract: WTB27-3P2421 WTB27-3P2441 WTB27-3E2411 WTB27-3R2641 WTB27-3 WTB27-3R2611 WTB27-3F2611 e2411 WTB27-3S3711
Text: KD01_W27_3_en.qxd 28.07.2006 16:01 Uhr Seite 854 W27 -3 Photoelectric switches BGS Photoelectric proximity switches Photoelectric reflex switches Through-beam photoelectric switches W27 , photoelectric proximity switch can be offered with the new, unique IO-Link fieldbus link. Overview of W27 , , Easy Teach-in, simple and fast commissioning, The all-rounder W27 -3 shows its IP69K in , the W27 -3 is sector. its very wide range of applications. A choice of variants offering


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PDF W27-3 W27-3: AC-15, DC-13 WTB27-3R2611 WTB27-3S1511 WTB27-3S3711 WTB27-3P2411 WTB27-3P2421 WTB27-3P2441 WTB27-3E2411 WTB27-3R2641 WTB27-3 WTB27-3R2611 WTB27-3F2611 e2411 WTB27-3S3711
npn transistor w27

Abstract: TRANSISTOR AH-10 S100 NPN Transistor
Text: CAL O GI C CORP l 4flE ] > lflMM322 0 0 0 0 3 3 2 6 m C G C LM114/ LM 114H / LM 114A / LM114AH caloric CORPORATION Monolithic Dual NPN General Purpose Amplifier 'TTTt-zn LM114 /LM114H/LM114A /LM114AH V GENERAL DESCRIPTION These devices contain a pair of junction-isolated NPN , 114A , AH VB61-2 IB1-2 0.5 2.0 0.5 Bias Current 20 3.0 AVbe/V A Ib / V W-27 UNITS mV nA 1hA transistor 2. These specifications


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PDF lflMM322 LM114/ LM114AH LM114 /LM114H/LM114A /LM114AH LM114A, npn transistor w27 TRANSISTOR AH-10 S100 NPN Transistor
2004 - w21 transistor smd

Abstract: transistor SMD w26 smd transistor w25 SMD Transistors w27 npn transistor w27 w13 smd transistor smd transistor w21 SMD Transistors w26 w21 smd transistor w25 transistor smd
Text: Ohms, 1/4W 1206 Chip Resistor FET Transistor NPN 35VCEO 50MA MINI-3P 4 Position Jumper_ .1" , Q1 NPN TRANSISTOR W13 TP9 W11 VoutS1B VoutB VoutS2B W7 VoutS1A VoutS1C VoutC , DAC_VOUT ECN Number Q2 NPN TRANSISTOR TP6 VoutS1D DAC_VOUT 2K TP10 W21 B VSS , spacing 15 W1 W2 W3 W4 W5 W10 W11 W12 W13 W20 W21 W23 W25 W26 W27 Molex 22-03-2031 3 , W25 W26 W27 TP9 TP10 J4 J5 3-2 Jumper Position 2-3 1-2 1-2 1-2 1-2 OPEN OPEN OPEN


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PDF DAC7654 SLAU130 470pF DAC7654 17-Mar-2004 w21 transistor smd transistor SMD w26 smd transistor w25 SMD Transistors w27 npn transistor w27 w13 smd transistor smd transistor w21 SMD Transistors w26 w21 smd transistor w25 transistor smd
WL27-3P2430

Abstract: WL27-3P2451 P2430 WL27-3F2631 WL27-3P2431 WL27-3E2631 3P245 WL27-3P2450 P2451 WL27-3P1131
Text: 05-08-2006 KD01_W27_3_en.fm Seite 867 Freitag, 28. Juli 2006 2:22 14 W27 -3 Technical data WL27 , outputs NPN antivalent PNP antivalent Signal voltage PNP HIGH / LOW > Vs - 2.5 V / approx. 0 V Signal voltage NPN HIGH / LOW Approx. Vs / < 2.5 V Output current Iamax 100 mA Response time


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PDF WL27-3, WL27-3P1131 WL27-3P2431 WL27-3E2631 WL27-3F2631 WL27-3P2430 WL27-3P2450 WL27-3P2451 WL27-3P2430 WL27-3P2451 P2430 WL27-3F2631 WL27-3P2431 WL27-3E2631 3P245 WL27-3P2450 P2451 WL27-3P1131
1998 - Transistors General

Abstract: NPN general purpose silicon transistors 2SC411K UMZ1N transistor 526 c114e transistor 2SC411K 581 PNP dual npn 500ma PNP Transistors
Text: dimensions (Units: mm) FStructure Epitaxial planar type NPN / PNP silicon transistor FAbsolute maximum , . FStructure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type) The following , be cut in half. FStructure A PNP and a NPN digital transistor (each with a single built in resistor , area can be cut in half. FStructure NPN / PNP epitaxial planar silicon transistor FExternal dimensions , (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors


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PDF 94S-830-AC115E) 96-458-AC124T) IMD10A 96-555-IMD10) IMD16A 96-473-IMD16) 94S-902-AC144T) 94S-904-AC114Y) 2SA1036K 2SC411K Transistors General NPN general purpose silicon transistors UMZ1N transistor 526 c114e transistor 2SC411K 581 PNP dual npn 500ma PNP Transistors
schematic diagram 48 volt UPS

Abstract: 12 volt zener diode on pspice 74 Series IC Manual TM3J 750 ohm resistor pnp npn dual emitter connected pnp high emitter base voltage 15 volt transistor schottky model spice 7.5 volt zener diode on pspice design manual
Text: transistor in the 700 Series has three modes of operation, NPN transistor , lateral PNP transistor , and substrate PNP transistor . Pin Function 1. NPN Base, PNP Collector 2. NPN Emitter 3. NPN Collector, PNP , Emitter NPN Transistor As an NPN transistor there are two separate bases and three emitters which you , 24mA (8mA per emitter) The base emitter junction of the NPN transistor makes an excellent 5.9 volt , ) 3 E C I SEMICONDUCTOR MflE D 30267^7 DDDDDb? TMb «ECIS T-M-3J EEI NPN Transistor hFE vs Ic (1


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PDF 800MHz) schematic diagram 48 volt UPS 12 volt zener diode on pspice 74 Series IC Manual TM3J 750 ohm resistor pnp npn dual emitter connected pnp high emitter base voltage 15 volt transistor schottky model spice 7.5 volt zener diode on pspice design manual
73412

Abstract: CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
Text: . 3-35 NPN Medium Power Microwave Transistor . 3-39 NPN Medium Power Microwave Transistor . 3-39 NPN Silicon High Speed Switching Transistor . 3-43 NPN Silicon High Speed Switching Transistor . 3-43 NPN Silicon High Speed Switching Transistor


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PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
2014 - Not Available

Abstract: No abstract text available
Text: LFP AK 56 D PHPT610035NK NPN / NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN / NPN high power double bipolar transistor in a SOT1205 , NPN / NPN high power double bipolar transistor 5. Pinning information Table 2. Pinning , NXP Semiconductors NPN / NPN high power double bipolar transistor 8. Limiting values Table 5 , Semiconductors NPN / NPN high power double bipolar transistor aaa-014341 4 Ptot (W) 3 (1) 2 1


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PDF PHPT610035NK OT1205 LFPAK56D) PHPT610030NK. PHPT610035PK. PHPT610035NPK. AEC-Q101
K3NC-PB1A

Abstract: RELAY SPDT rising edge EN61010-1 SU104 K3NC-NB2C K3NC-NB1A omron k31-c2 K31-L6 IEC1010-1 su101
Text: -422 K31-FLK3 Yes - BCD output + 5 transistor outputs ( NPN open collector) K31-B4 Yes Yes 4 to 20 mA + 5 transistor outputs ( NPN open collector) K31-L4 Yes Yes 1 to 5 V + 5 transistor outputs ( NPN open collector) K31-L5 Yes Yes 1 mV/10 digits + 5 transistor outputs ( NPN open collector) K31-L6 Yes Yes 0 to 5 VDC + 5 transistor outputs ( NPN open collector) K31-L9 Yes Yes 0 to 10 VDC + 5 transistor outputs ( NPN open collector) K31-L10 Yes Yes


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PDF 50-kHz IEC1010-1) EN61010-1 N089-E1-1A 0698-1M K3NC-PB1A RELAY SPDT rising edge EN61010-1 SU104 K3NC-NB2C K3NC-NB1A omron k31-c2 K31-L6 IEC1010-1 su101
2014 - Not Available

Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NK NPN / NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN / NPN high power double bipolar transistor in a SOT1205 , NXP Semiconductors NPN / NPN high power double bipolar transistor 5. Pinning information Table 2 , reserved 3 / 15 PHPT610030NK NXP Semiconductors NPN / NPN high power double bipolar transistor , reserved 5 / 15 PHPT610030NK NXP Semiconductors NPN / NPN high power double bipolar transistor


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PDF PHPT610030NK OT1205 LFPAK56D) PHPT610030PK. PHPT610030NPK. AEC-Q101
1999 - Darlington pair IC with 15 Amp

Abstract: disadvantages of capacitor 150 watt amplifier advantages and disadvantages PNP DARLINGTON SINK DRIVER 500ma darlington pair transistor 1A power Junction FET advantages and disadvantages sr004 amplifier advantages and disadvantages linear regulator application
Text: the sum of the VCE for the PNP transistor plus the VBE of each NPN transistor or 2VBE ( NPN ) + VCE(sat , the NPN darlington and PNP transistor composite or ILOAD/b3. The NPN darlington output stage is still , , a PNP transistor occupies more die area to pass the same amount of current as an NPN transistor . Due , power NPN transistor , driven by a PNP transistor . The total dropout voltage is VBE ( NPN ) + VCE(sat)(PNP , structure, the base drive of the NPN pass transistor flows into the load and only the smaller bias current


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2012 - NPN TRANSISTOR SMD MARKING CODE B2

Abstract: DFN2020-6
Text: PBSS4230PAN 14 December 2012 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN / NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a , NXP Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor 5. Pinning , Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor Symbol Per device Rth(j-a , NXP Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W


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PDF PBSS4230PAN DFN2020-6 OT1118) PBSS4230PANP. PBSS5230PAP. AEC-Q101 NPN TRANSISTOR SMD MARKING CODE B2 DFN2020-6
2002 - TRANSISTOR SMD MARKING CODE

Abstract: TRANSISTOR SMD MARKING CODE A1 smd code book B3 transistor transistor data cd 100 MARKING SMD npn TRANSISTOR PMEM4010PD schottky transistor npn TRANSISTOR SMD MARKING CODE UA smd transistor marking B3 pulse to sinewave convertor
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010ND NPN transistor , specification NPN transistor /Schottky diode module PMEM4010ND PINNING FEATURES · 600 mW total power , : PMEM4010PD. 2002 Oct 28 2 Philips Semiconductors Product specification NPN transistor , System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO , NPN transistor /Schottky diode module PMEM4010ND CHARACTERISTICS Tamb = 25 °C unless otherwise


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PDF M3D302 PMEM4010ND SCA74 613514/01/pp12 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1 smd code book B3 transistor transistor data cd 100 MARKING SMD npn TRANSISTOR PMEM4010PD schottky transistor npn TRANSISTOR SMD MARKING CODE UA smd transistor marking B3 pulse to sinewave convertor
2010 - Not Available

Abstract: No abstract text available
Text: PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor Rev. 1 - 14 July 2010 Product data sheet , Semiconductors PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor Quick reference data .continued , PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 , Semiconductors PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 102 Zth(j-a) (K/W) 10 006aac305 , PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb =


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PDF PBSS4032SPN OT96-1 PBSS4032SPN OT96-1 PBSS4032SN PBSS4032SP
2003 - smd TRANSISTOR code b6

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR marking b6 smd TRANSISTOR code marking AV MARKING SMD npn TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor , NPN transistor /Schottky-diode module PMEM4020ND PINNING FEATURES · 600 mW total power , (SOT457) and symbol. DESCRIPTION Combination of an NPN transistor with low VCEsat and high current , 2 VERSION SOT457 Philips Semiconductors Product specification NPN transistor , ). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO


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PDF M3D302 PMEM4020ND SCA75 R76/01/pp11 smd TRANSISTOR code b6 MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR marking b6 smd TRANSISTOR code marking AV MARKING SMD npn TRANSISTOR
2009 - marking code E5 SMD ic

Abstract: smd transistor marking e5 TRANSISTOR SMD CODE PACKAGE SOT363 MARKING CODE E5 NXP marking code e5 sot363 BC846BPN E5 SMD Transistor TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC
Text: BC846BS 65 V, 100 mA NPN / NPN general-purpose transistor Rev. 01 - 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN / NPN general-purpose transistor pair in a very , 65 V, 100 mA NPN / NPN general-purpose transistor 006aab619 103 Zth(j-a) (K/W) =1 0.75 , BC846BS NXP Semiconductors 65 V, 100 mA NPN / NPN general-purpose transistor Table 8 , NXP Semiconductors 65 V, 100 mA NPN / NPN general-purpose transistor 11. Soldering 2.65 solder


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PDF BC846BS OT363 SC-88 BC856BS BC846BPN AEC-Q101 BC846BS marking code E5 SMD ic smd transistor marking e5 TRANSISTOR SMD CODE PACKAGE SOT363 MARKING CODE E5 NXP marking code e5 sot363 BC846BPN E5 SMD Transistor TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC
2013 - Not Available

Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor 11 January 2013 , ) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN , product PBSS4130PAN NXP Semiconductors 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor 5 , A NPN / NPN low VCEsat (BISS) transistor 1.5 006aad165 (1) Ptot (W) 1.0 (2) (3) (4) (5 , reserved 4 / 17 PBSS4130PAN NXP Semiconductors 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor


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PDF PBSS4130PAN DFN2020-6 OT1118) PBSS4130PANP. PBSS5130PAP. AEC-Q101
1998 - PNP DARLINGTON SINK DRIVER 500ma

Abstract: 150 watt amplifier advantages and disadvantages power Junction FET advantages and disadvantages Darlington pair IC with 15 Amp disadvantages of capacitor darlington pair transistor 1A npn darlington transistor 150 watts PNP DARLINGTON SINK DRIVER Darlington pair IC single linear regulator application
Text: transistor plus the VBE of each NPN transistor or to rise. In response, the voltage at the non inverting , is the load current divided by the gain of the NPN darlington and PNP transistor composite or ILOAD , . The pass device is a single power NPN transistor , driven by a PNP transistor . The total dropout , counterpart. In the composite structure, the base drive of the NPN pass transistor flows into the load and , current as an NPN transistor . Due to the fact that bipolar processes are optimized around the NPN device


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pnp germanium transistor

Abstract: germanium transistors PNP Germanium Transistors
Text: METER SCALES GOOD NPN or PNP Ge or Si , Base or Gate for good transistor or FET’s Readable , leakage limits Does not apply NPN or PNP Ge or Si , Base or Gate for good transistor or FET’s , 520C Specifications Model 520C Industrial Transistor Tester IN-CIRCUIT TEST The B+K Precision model 520C Transistor Tester is designed for in-circuit and out-of circuit transistor testing , devices. ■Front Panel socket for out-of –circuit transistor testing. Model 510A Portable


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2012 - marking code 2R

Abstract: No abstract text available
Text: PBSS4112PAN 29 November 2012 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor Product data , PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor Symbol IBM Ptot Parameter peak base current , 4 / 17 NXP Semiconductors PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor , PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 006aad167 duty , Semiconductors PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102


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PDF PBSS4112PAN DFN2020-6 OT1118) PBSS4112PANP. PBSS5112PAP. AEC-Q101 marking code 2R
2013 - Not Available

Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4160PAN 60 V, 1 A NPN / NPN low VCEsat (BISS) transistor 14 January 2013 , ) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN , product PBSS4160PAN NXP Semiconductors 60 V, 1 A NPN / NPN low VCEsat (BISS) transistor 5 , A NPN / NPN low VCEsat (BISS) transistor 1.5 006aad165 (1) Ptot (W) 1.0 (2) (3) (4) (5 , reserved 4 / 17 PBSS4160PAN NXP Semiconductors 60 V, 1 A NPN / NPN low VCEsat (BISS) transistor


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PDF PBSS4160PAN DFN2020-6 OT1118) PBSS4160PANP. PBSS5160PAP. AEC-Q101
2001 - IC DATE CODE

Abstract: complementary npn-pnp BC847BVN
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BVN NPN /PNP general purpose transistor , specification NPN /PNP general purpose transistor FEATURES BC847BVN PINNING · 300 mW total power , 3 2 3 MAM443 Top view NPN /PNP transistor pair in a SOT666 plastic package. MARKING , 07 2 Philips Semiconductors Product specification NPN /PNP general purpose transistor , nA NPN transistor VBE base-emitter turn-on voltage VCE = 5 V; IC = 2 mA Cc collector


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PDF M3D744 BC847BVN SC-75/SC-89 SCA73 613514/02/pp8 IC DATE CODE complementary npn-pnp BC847BVN
XM2A-3701

Abstract: k31c2 XM2A-2501 XM2S-2511 XM2D-0901 XM2D-0911 K31-FLK3 K31FLK6 K31-L1 xm2s-09
Text: - RS-422 K31-FLK3 Yes - BCD output + 5 transistor outputs ( NPN open collector) K31-B4 Yes Yes 4 to 20 mA + 5 transistor outputs ( NPN open collector) K31-L4 Yes Yes 1 to 5 V + 5 transistor outputs ( NPN open collector) K31-L5 Yes Yes 1 mV/10 digits + 5 transistor outputs ( NPN open collector) K31-L6 Yes Yes 0 to 5 VDC + 5 transistor outputs ( NPN open collector) K31-L9 Yes Yes 0 to 10 VDC + 5 transistor outputs ( NPN open collector


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PDF 50-kHz N088-E1-1A 0698-1M XM2A-3701 k31c2 XM2A-2501 XM2S-2511 XM2D-0901 XM2D-0911 K31-FLK3 K31FLK6 K31-L1 xm2s-09
2009 - PBSS2515YPN

Abstract: No abstract text available
Text: Product data sheet 15 V low VCE(sat) NPN /PNP transistor FEATURES PBSS2515YPN QUICK REFERENCE DATA , TR2 DESCRIPTION TR1 NPN /PNP low VCEsat transistor pair in a SC-88 plastic package. 1 2 , Semiconductors Product data sheet 15 V low VCE(sat) NPN /PNP transistor PBSS2515YPN LIMITING VALUES , VCE(sat) NPN /PNP transistor PBSS2515YPN CHARACTERISTICS Tamb = 25 °C unless otherwise , voltage VCE = 2 V; IC = 100 mA; note 1 − − 0.9 V NPN transistor fT transition


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PDF MBD128 PBSS2515YPN SC-70 R75/03/pp11 PBSS2515YPN
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