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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

npn transistor w16 Datasheets Context Search

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npn transistor w16

Abstract: transistor w16 transistor w26 npn transistor w26 npn transistor w15 w11b W16 transistor TRANSISTOR w22 w25 transistor TRANSISTOR W25
Text: NPN E2S-Q13 E2S-W23 E2S-Q23 E2S-W15 E2S-Q15 E2S-W25 E2S-Q25 NC (Normally closed) E2S-W14 E2S-Q14 , face E2S- Q13 E2S- Q14 E2S- W23 E2S- W24 E2S- Q23 E2S- Q24 E2S- W15 E2S- W16 E2S- Q15 E2S- Q16 E2S- W25 , Output Circuits and Timing Charts for details NPN open collector output 50 mA max. (30 V DC max.) jj3 , E2S- Q23 E2S- Q24 E2S- W15 E2S- W16 E2S- Q15 E2S- Q16 E2S- W25 E2S- W26 E2S E2S- Q25 E2S- Q26 - , Operation status NO Output configuration NPN Part number E2S- W13 E2S- W23 E2S- Q13 E2S- Q23 Timing charts


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PDF E2S-W11 E2S-Q11 E2S-W21 E2S-Q21 E2S-W12 E2S-Q12 E2S-W22 E2S-Q22 npn transistor w16 transistor w16 transistor w26 npn transistor w26 npn transistor w15 w11b W16 transistor TRANSISTOR w22 w25 transistor TRANSISTOR W25
npn transistor w16

Abstract: W11B transistor w16 proximity-Sensor npn transistor w26 omron e2s E2S-W13 npn transistor w15 E2S-Q13 E2S-Q12
Text: ) E2S- W16 E2S- W26 E2S- Q16 E2S- Q26 - Target object Output transistor (load) Output transistor , distance Output configuration Operation status NPN 2.5 mm (0.10 in) 1.6 mm (0.06 in) PNP , - E2S- W15 E2S- W16 - E2S- Q15 E2S- Q16 - E2S- W25 E2S- W26 - E2S- Q25 E2S- Q26 , details Control output Switching capacity NPN open collector output 50 mA max. (30 V DC max , - Q14 - E2S- W23 E2S- W24 - E2S- Q23 E2S- Q24 - E2S- W15 E2S- W16 - E2S- Q15 E2S


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PDF E2S-W11 E2S-W12 E2S-Q11 E2S-Q12 E2S-W21 E2S-Q21 E2S-W22 E2S-Q22 1-800-55-OMRON npn transistor w16 W11B transistor w16 proximity-Sensor npn transistor w26 omron e2s E2S-W13 npn transistor w15 E2S-Q13 E2S-Q12
npn transistor w16

Abstract: SVM7962 DD 127 D TRANSISTOR transistor Vbe SVM7966 SVM7900 SVM79 SVM7963 resistor 820k Multi-Melody Generator cmos
Text: -ohm dynamic loudspeaker if provided externally with a transistor , CONFIGURATION DIP-16pin/SOP1-16Pin OSC1 C 1 W16 :vDD OSC2 C 2 15 ÜOUT2 TST2 [ 3 14 HOUT1 mt c 4 13 DPI , for acoustic signals that have not been amplified. 1 3 1 4 1 5 pi out1 out2 Provided Connects PNP/ NPN , V|L=VSS VDd=1 -5V - - 0.05 PA "1" output current (2) l0h2 B/E, bipolar transistor VBe=0.7V VDd=1 -2V 6.0 20 60 PA "0" output current (3) l0l3 OUT2, bipolar transistor Vbe=0.7V standby VDD=1.5V - -


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PDF PF237-05 SVM7960C SVM7900 750k-ohms 820k-ohms 130ktyp. 150ktyp. SVM7960 npn transistor w16 SVM7962 DD 127 D TRANSISTOR transistor Vbe SVM7966 SVM7900 SVM79 SVM7963 resistor 820k Multi-Melody Generator cmos
2004 - w21 transistor smd

Abstract: transistor SMD w26 smd transistor w25 SMD Transistors w27 npn transistor w27 w13 smd transistor smd transistor w21 SMD Transistors w26 w21 smd transistor w25 transistor smd
Text: Ohms, 1/4W 1206 Chip Resistor FET Transistor NPN 35VCEO 50MA MINI-3P 4 Position Jumper_ .1" , Q1 NPN TRANSISTOR W13 TP9 W11 VoutS1B VoutB VoutS2B W7 VoutS1A VoutS1C VoutC , DAC_VOUT ECN Number Q2 NPN TRANSISTOR TP6 VoutS1D DAC_VOUT 2K TP10 W21 B VSS , 21 9 W6 W7 W8 W9 W14 W15 W16 W22 W24 Molex 22-03-2021 2 Position Jumper_ .1" , Reference W1 W2 W3 W4 W5 W6 W7 W8 W9 W10 W11 W12 W13 W14 W15 W16 W20 W21 W22 W23 W24


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PDF DAC7654 SLAU130 470pF DAC7654 17-Mar-2004 w21 transistor smd transistor SMD w26 smd transistor w25 SMD Transistors w27 npn transistor w27 w13 smd transistor smd transistor w21 SMD Transistors w26 w21 smd transistor w25 transistor smd
2005 - smd transistor w16

Abstract: transistor smd w16 W16 SMD transistor SMD W16 Transistor sample programs using C in TMS320C6713 DSK sample programs using C in TMS320VC5510 DSK w12 smd transistor VF900537-40 vf900 TMS320C6713 DSK kit circuit diagram
Text: Data destination Not Installed Installed W16 Clock destination Not Installed , of control signals selected can be routed to either channel 0 or channel 1 via W14, W15, and W16 as shown in Figure 12. Channel 0 FS_SEL W14 DOUT_SEL W15 Channel 1 CLK_SEL W16 Figure , -3.3 U8 IC LDO Regulator 3.3V 100 mA 8SOP Texas Instruments REG101UA-3.3 40 1 TRANSISTOR ­ NPN Q1 TRANS NPN 40 V SOT-23 Infineon SMBT3904E6327 41 1 SM_LED_1206 LED


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PDF SLAU147 ADS1601/02 ADS1601/02 16-bit smd transistor w16 transistor smd w16 W16 SMD transistor SMD W16 Transistor sample programs using C in TMS320C6713 DSK sample programs using C in TMS320VC5510 DSK w12 smd transistor VF900537-40 vf900 TMS320C6713 DSK kit circuit diagram
2004 - npn transistor w15

Abstract: smd transistor w16 transistor smd w16 XTR115 u1 741 opamp 35VCEO REF3025 OPA703 OPA627 smd w16 transistor
Text: Panasonic 2SC24050RL FET Transistor NPN 35VCEO 50MA MINI-3P 12 1 J5 Molex 22-03-2041 , W14 W16 Molex 22-03-2021 2 Position Jumper_ 0.1" spacing 22 10 W1 W2 W3 W4 W5 W6 W7 , OPEN U2 operational amplifier configuration jumper set to unity gain W16 OPEN RSTSEL , be connected to either the base of transistor , Q1 or the current input pin of the XTR115, U4A, via jumper W6. The sense pin of the DAC7631 should be connected to the emitter side of transistor Q1 via


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PDF SLAU148 DAC7631EVM DAC7631 npn transistor w15 smd transistor w16 transistor smd w16 XTR115 u1 741 opamp 35VCEO REF3025 OPA703 OPA627 smd w16 transistor
2004 - C3225X7R1E106KT

Abstract: smd transistor w16 npn transistor w16 transistor smd w16 smd transistor w7 ERJ-8ENF1242V XTR115 REF3025 npn transistor w15 OPA2234
Text: Panasonic 2SC24050RL FET Transistor NPN 35VCEO 50MA MINI-3P 12 1 J5 Molex 22-03-2041 , W14 W16 Molex 22-03-2021 2 Position Jumper_ 0.1" spacing 22 10 W1 W2 W3 W4 W5 W6 W7 , OPEN U2 operational amplifier configuration jumper set to unity gain W16 OPEN RSTSEL , be connected to either the base of transistor , Q1 or the current input pin of the XTR115, U4A, via jumper W6. The sense pin of the DAC7631 should be connected to the emitter side of transistor Q1 via


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PDF SLAU148 DAC7631EVM DAC7631 C3225X7R1E106KT smd transistor w16 npn transistor w16 transistor smd w16 smd transistor w7 ERJ-8ENF1242V XTR115 REF3025 npn transistor w15 OPA2234
npn transistor w16

Abstract: 1608B 2SC3590
Text: SANYO SEMICONDUCTOR CORP 1 15E D ■7cn?G7L, 0004404 S 2SC3590 r-33-ii 201 OA NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Horizontal Deflection Output Applications Features . Fast switching speed. , Low saturation voltage. . Adoption of MBIT process. Absolute Maxima , „-W0 c 0) t» t, 3 O cj a > I 20 W16 m > S« (0 u 3 U m o. 'H r «i «î •h « î. o o , fl zo CASE OUTLINES AND ATTACHMENTS • All of Sanyo Transistor case outlines are illustrated


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PDF 2SC3590 r-33-ii 0DGB752 npn transistor w16 1608B 2SC3590
2005 - sprague 673D

Abstract: 92112 ic LM2577 pin diagram LM2577-12 IC 92112 LM2577 LM2577-ADJ IC 92112 8 pin LM25771 415-0930
Text: 65V3A NPN 3.5V 40V 52kHz 3.0A NPN 52kHz ( ) Straight Leads 5-Lead TO-220 (T) Bent, Staggered Leads 5-Lead TO-220 (T) Top View Order Number , -263 PC 0.5 50 /W1 JA 37 / W1.6 32 /W JA JA Note 10: LM2577 , LM2577-12 LM2577-15 12V 15V LM2577 52kHz / (L) NPN


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PDF 65V3A 52kHz O-220 LM2577T-12 LM2577T-15 LM2577T-ADJ LM2577T-12, LM2577T-15, sprague 673D 92112 ic LM2577 pin diagram LM2577-12 IC 92112 LM2577 LM2577-ADJ IC 92112 8 pin LM25771 415-0930
415-0930

Abstract: IC 92112 8 pin LM2577-12 LM2577-ADJ LM2577 LM2577 pin diagram IC 92112 sprague 673D LM2577-15 PE-65300
Text: 65V3A NPN 3.5V 40V 52kHz 3.0A NPN 52kHz ( ) Straight Leads 5-Lead TO-220 (T) Bent, Staggered Leads 5-Lead TO-220 (T) Top View Order Number , -263 PC 0.5 50 /W1 JA 37 / W1.6 32 /W JA JA Note 10: LM2577 , LM2577-12 LM2577-15 12V 15V LM2577 52kHz / (L) NPN


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PDF 65V3A 52kHz O-220 LM2577T-12 LM2577T-15 LM2577T-ADJ LM2577T-12, LM2577T-15, 415-0930 IC 92112 8 pin LM2577-12 LM2577-ADJ LM2577 LM2577 pin diagram IC 92112 sprague 673D LM2577-15 PE-65300
1998 - Transistors General

Abstract: NPN general purpose silicon transistors 2SC411K UMZ1N transistor 526 c114e transistor 2SC411K 581 PNP dual npn 500ma PNP Transistors
Text: dimensions (Units: mm) FStructure Epitaxial planar type NPN / PNP silicon transistor FAbsolute maximum , . FStructure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type) The following , be cut in half. FStructure A PNP and a NPN digital transistor (each with a single built in resistor , area can be cut in half. FStructure NPN / PNP epitaxial planar silicon transistor FExternal dimensions , (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors


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PDF 94S-830-AC115E) 96-458-AC124T) IMD10A 96-555-IMD10) IMD16A 96-473-IMD16) 94S-902-AC144T) 94S-904-AC114Y) 2SA1036K 2SC411K Transistors General NPN general purpose silicon transistors UMZ1N transistor 526 c114e transistor 2SC411K 581 PNP dual npn 500ma PNP Transistors
schematic diagram 48 volt UPS

Abstract: 12 volt zener diode on pspice 74 Series IC Manual TM3J 750 ohm resistor pnp npn dual emitter connected pnp high emitter base voltage 15 volt transistor schottky model spice 7.5 volt zener diode on pspice design manual
Text: transistor in the 700 Series has three modes of operation, NPN transistor , lateral PNP transistor , and substrate PNP transistor . Pin Function 1. NPN Base, PNP Collector 2. NPN Emitter 3. NPN Collector, PNP , Emitter NPN Transistor As an NPN transistor there are two separate bases and three emitters which you , 24mA (8mA per emitter) The base emitter junction of the NPN transistor makes an excellent 5.9 volt , ) 3 E C I SEMICONDUCTOR MflE D 30267^7 DDDDDb? TMb «ECIS T-M-3J EEI NPN Transistor hFE vs Ic (1


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PDF 800MHz) schematic diagram 48 volt UPS 12 volt zener diode on pspice 74 Series IC Manual TM3J 750 ohm resistor pnp npn dual emitter connected pnp high emitter base voltage 15 volt transistor schottky model spice 7.5 volt zener diode on pspice design manual
73412

Abstract: CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
Text: . 3-35 NPN Medium Power Microwave Transistor . 3-39 NPN Medium Power Microwave Transistor . 3-39 NPN Silicon High Speed Switching Transistor . 3-43 NPN Silicon High Speed Switching Transistor . 3-43 NPN Silicon High Speed Switching Transistor


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PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
2014 - Not Available

Abstract: No abstract text available
Text: LFP AK 56 D PHPT610035NK NPN / NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN / NPN high power double bipolar transistor in a SOT1205 , NPN / NPN high power double bipolar transistor 5. Pinning information Table 2. Pinning , NXP Semiconductors NPN / NPN high power double bipolar transistor 8. Limiting values Table 5 , Semiconductors NPN / NPN high power double bipolar transistor aaa-014341 4 Ptot (W) 3 (1) 2 1


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PDF PHPT610035NK OT1205 LFPAK56D) PHPT610030NK. PHPT610035PK. PHPT610035NPK. AEC-Q101
K3NC-PB1A

Abstract: RELAY SPDT rising edge EN61010-1 SU104 K3NC-NB2C K3NC-NB1A omron k31-c2 K31-L6 IEC1010-1 su101
Text: -422 K31-FLK3 Yes - BCD output + 5 transistor outputs ( NPN open collector) K31-B4 Yes Yes 4 to 20 mA + 5 transistor outputs ( NPN open collector) K31-L4 Yes Yes 1 to 5 V + 5 transistor outputs ( NPN open collector) K31-L5 Yes Yes 1 mV/10 digits + 5 transistor outputs ( NPN open collector) K31-L6 Yes Yes 0 to 5 VDC + 5 transistor outputs ( NPN open collector) K31-L9 Yes Yes 0 to 10 VDC + 5 transistor outputs ( NPN open collector) K31-L10 Yes Yes


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PDF 50-kHz IEC1010-1) EN61010-1 N089-E1-1A 0698-1M K3NC-PB1A RELAY SPDT rising edge EN61010-1 SU104 K3NC-NB2C K3NC-NB1A omron k31-c2 K31-L6 IEC1010-1 su101
2014 - Not Available

Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NK NPN / NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN / NPN high power double bipolar transistor in a SOT1205 , NXP Semiconductors NPN / NPN high power double bipolar transistor 5. Pinning information Table 2 , reserved 3 / 15 PHPT610030NK NXP Semiconductors NPN / NPN high power double bipolar transistor , reserved 5 / 15 PHPT610030NK NXP Semiconductors NPN / NPN high power double bipolar transistor


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PDF PHPT610030NK OT1205 LFPAK56D) PHPT610030PK. PHPT610030NPK. AEC-Q101
1999 - Darlington pair IC with 15 Amp

Abstract: disadvantages of capacitor 150 watt amplifier advantages and disadvantages PNP DARLINGTON SINK DRIVER 500ma darlington pair transistor 1A power Junction FET advantages and disadvantages sr004 amplifier advantages and disadvantages linear regulator application
Text: the sum of the VCE for the PNP transistor plus the VBE of each NPN transistor or 2VBE ( NPN ) + VCE(sat , the NPN darlington and PNP transistor composite or ILOAD/b3. The NPN darlington output stage is still , , a PNP transistor occupies more die area to pass the same amount of current as an NPN transistor . Due , power NPN transistor , driven by a PNP transistor . The total dropout voltage is VBE ( NPN ) + VCE(sat)(PNP , structure, the base drive of the NPN pass transistor flows into the load and only the smaller bias current


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2011 - transistor smd w16

Abstract: smd transistor w16 hall sensor marked w10
Text: Hall or encoder sensor, the W4 jumper must be connected and the W7 jumper disconnected. The W16 jumper , voltage. Setting the W16 jumper to not marked position supplies the Hall sensor with the same supply , with VDD W16 Not marked position for supplying Hall/encoder with +5 V Table 3 shows jumper , Single-shunt W14 Present for voltage doubler Not present for standard voltage range W16 Dash mark , Single-shunt W14 Not present W16 Dash marked position for supplying of Hall/encoder with VDD Not


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PDF UM0723 L6390 STGP10NC60KD O-220 transistor smd w16 smd transistor w16 hall sensor marked w10
2012 - NPN TRANSISTOR SMD MARKING CODE B2

Abstract: DFN2020-6
Text: PBSS4230PAN 14 December 2012 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN / NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a , NXP Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor 5. Pinning , Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor Symbol Per device Rth(j-a , NXP Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W


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PDF PBSS4230PAN DFN2020-6 OT1118) PBSS4230PANP. PBSS5230PAP. AEC-Q101 NPN TRANSISTOR SMD MARKING CODE B2 DFN2020-6
2002 - TRANSISTOR SMD MARKING CODE

Abstract: TRANSISTOR SMD MARKING CODE A1 smd code book B3 transistor transistor data cd 100 MARKING SMD npn TRANSISTOR PMEM4010PD schottky transistor npn TRANSISTOR SMD MARKING CODE UA smd transistor marking B3 pulse to sinewave convertor
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010ND NPN transistor , specification NPN transistor /Schottky diode module PMEM4010ND PINNING FEATURES · 600 mW total power , : PMEM4010PD. 2002 Oct 28 2 Philips Semiconductors Product specification NPN transistor , System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO , NPN transistor /Schottky diode module PMEM4010ND CHARACTERISTICS Tamb = 25 °C unless otherwise


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PDF M3D302 PMEM4010ND SCA74 613514/01/pp12 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1 smd code book B3 transistor transistor data cd 100 MARKING SMD npn TRANSISTOR PMEM4010PD schottky transistor npn TRANSISTOR SMD MARKING CODE UA smd transistor marking B3 pulse to sinewave convertor
2010 - Not Available

Abstract: No abstract text available
Text: PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor Rev. 1 - 14 July 2010 Product data sheet , Semiconductors PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor Quick reference data .continued , PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 , Semiconductors PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 102 Zth(j-a) (K/W) 10 006aac305 , PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb =


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PDF PBSS4032SPN OT96-1 PBSS4032SPN OT96-1 PBSS4032SN PBSS4032SP
2003 - smd TRANSISTOR code b6

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR marking b6 smd TRANSISTOR code marking AV MARKING SMD npn TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor , NPN transistor /Schottky-diode module PMEM4020ND PINNING FEATURES · 600 mW total power , (SOT457) and symbol. DESCRIPTION Combination of an NPN transistor with low VCEsat and high current , 2 VERSION SOT457 Philips Semiconductors Product specification NPN transistor , ). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO


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PDF M3D302 PMEM4020ND SCA75 R76/01/pp11 smd TRANSISTOR code b6 MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR marking b6 smd TRANSISTOR code marking AV MARKING SMD npn TRANSISTOR
2009 - marking code E5 SMD ic

Abstract: smd transistor marking e5 TRANSISTOR SMD CODE PACKAGE SOT363 MARKING CODE E5 NXP marking code e5 sot363 BC846BPN E5 SMD Transistor TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC
Text: BC846BS 65 V, 100 mA NPN / NPN general-purpose transistor Rev. 01 - 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN / NPN general-purpose transistor pair in a very , 65 V, 100 mA NPN / NPN general-purpose transistor 006aab619 103 Zth(j-a) (K/W) =1 0.75 , BC846BS NXP Semiconductors 65 V, 100 mA NPN / NPN general-purpose transistor Table 8 , NXP Semiconductors 65 V, 100 mA NPN / NPN general-purpose transistor 11. Soldering 2.65 solder


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PDF BC846BS OT363 SC-88 BC856BS BC846BPN AEC-Q101 BC846BS marking code E5 SMD ic smd transistor marking e5 TRANSISTOR SMD CODE PACKAGE SOT363 MARKING CODE E5 NXP marking code e5 sot363 BC846BPN E5 SMD Transistor TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC
2013 - Not Available

Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor 11 January 2013 , ) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN , product PBSS4130PAN NXP Semiconductors 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor 5 , A NPN / NPN low VCEsat (BISS) transistor 1.5 006aad165 (1) Ptot (W) 1.0 (2) (3) (4) (5 , reserved 4 / 17 PBSS4130PAN NXP Semiconductors 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor


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PDF PBSS4130PAN DFN2020-6 OT1118) PBSS4130PANP. PBSS5130PAP. AEC-Q101
1998 - PNP DARLINGTON SINK DRIVER 500ma

Abstract: 150 watt amplifier advantages and disadvantages power Junction FET advantages and disadvantages Darlington pair IC with 15 Amp disadvantages of capacitor darlington pair transistor 1A npn darlington transistor 150 watts PNP DARLINGTON SINK DRIVER Darlington pair IC single linear regulator application
Text: transistor plus the VBE of each NPN transistor or to rise. In response, the voltage at the non inverting , is the load current divided by the gain of the NPN darlington and PNP transistor composite or ILOAD , . The pass device is a single power NPN transistor , driven by a PNP transistor . The total dropout , counterpart. In the composite structure, the base drive of the NPN pass transistor flows into the load and , current as an NPN transistor . Due to the fact that bipolar processes are optimized around the NPN device


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