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Part Manufacturer Description Datasheet Download Buy Part
UCC27611DRVT Texas Instruments 5V, 4A/6A Low Side GaN Driver 6-WSON -40 to 140
UCC27611DRVR Texas Instruments 5V, 4A/6A Low Side GaN Driver 6-WSON -40 to 140
LMG5200MOFR Texas Instruments 80V GaN Half Bridge Power Stage 9-QFM -40 to 125
PLMG5200MOFT Texas Instruments 80V GaN Half Bridge Power Stage 9-QFM -40 to 125
LMG5200MOFT Texas Instruments 80V GaN Half Bridge Power Stage 9-QFM -40 to 125
LM5113TME/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA

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LTS2020

Abstract: LTS-2020 DE-AC04-94AL85000 al 2539 IC 4051 data sheet LM111 LM139 LM111S NATIONAL SEMICONDUCTOR Rad hardness
Text: have a composite passivation layer consisting of a 1-µm oxide capped with a 1-µm nitride. Nitride , source for hydrogen. In addition, others have observed that some bipolar devices with nitride passivation layers are more sensitive to PETS effects than devices without nitride passivation [11]. To investigate the effect of the nitride passivation layer on PETS and ELDRS effects we removed the nitride , microscope (SEM) cross section taken after wet etching a die. Note that not all of the nitride layer could


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PDF LM111 LM139s LTS2020 LTS-2020 DE-AC04-94AL85000 al 2539 IC 4051 data sheet LM139 LM111S NATIONAL SEMICONDUCTOR Rad hardness
Not Available

Abstract: No abstract text available
Text: between the two types of silicon nitride. Electrical characterization of MIM capacitor shows that there , Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT , 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride (Si3N4) films deposited using , silicon nitride film deposited as a multi-layer-layer film has different properties compared to a film , , there are multiple materials that can be used as MIM capacitor dielectric. They include silicon nitride


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PDF 300oC,
2015 - Not Available

Abstract: No abstract text available
Text: the resistive film to prevent corrosion. • Moisture Resistant Tantalum Nitride Film – Our versatile chip resistors are also available with tantalum nitride resistive film. Tantalum nitride is a , , Precision High Low-TCR Precision Power, Aluminum Automotive Moisture-Resistant Nitride substrate , Passivated Nichrome Passivated Nichrome Passivated Nichrome Tantalum Nitride Passivated , Tantalum Nitride Passivated Nichrome Ruthenium Tantalum Nitride Tantalum Nitride Tantalum Nitride


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PDF cor4-9337-2726 VMN-SG2168-1502
nichrome resistor failures

Abstract: tantalum nitride tantalum pentoxide dielectric strength nitride A110 Vishay Nichrome Chip Resistors 22A110
Text: Sacrifices Thin Film Chip Resistors are available in either Nichrome resistor film or Tantalum Nitride. The , Nitride. Test Conclusion TECH NOTE The biggest advantage of the HAST test is that it is much , hermetic packages. Tantalum Nitride resistor films have typically been the film of choice but require , , costly hermetic packaging or use of tantalum nitride films. This Tech Note is intended to be a , . The moisture resistance of tantalum nitride depends on the proper thickness of Tantalum Pentoxide


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PDF 22-A110 25-Feb-08 nichrome resistor failures tantalum nitride tantalum pentoxide dielectric strength nitride A110 Vishay Nichrome Chip Resistors 22A110
Not Available

Abstract: No abstract text available
Text: TAMELOX or TANTALUM NITRIDE custom (N S ). 148 TAMELOX or TANTALUM NITRIDE or CHROMIUM SILICON custom (NS, NEj .148 TANTALUM NITRIDE or TAMELOX S20/A20 (NS) . . . .155 TA-22T (NE) . . . .1 5 8 CHROMIUM SILICON CS 22 (NE) . . .160 TANTALUM NITRIDE or TAMELOX , TANTALUM NITRIDE S50/A50 (N S ). 155 CHROMIUM SILICON CS 55 (NE) .174 , S30R, A30R / S30V, A30V (NS) .181 TANTALUM NITRIDE Center tap TAMELOX or


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PDF S20/A20 TA-22T S40/A40 S50/A50 RMK-55 RMK-515 CS-522 RMK-22 RSK-22 TA-33T
2002 - silicon carbide

Abstract: gallium nitride nitride led 5mm 2000mcd ultraviolet led 5mm silicon carbide LED IR941 3000mcd
Text: Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InGaAIP - Indium Gallium Aluminum Phosphide InGaAIP - Indium Gallium Aluminum Phosphide GaP/GaP - , Phosphide/Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride GaN - Gallium Nitride ISO 9001


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PDF IR941 IR881 IR851 PG350 AG10K UB500 UV405 UV395 UV750 4500K silicon carbide gallium nitride nitride led 5mm 2000mcd ultraviolet led 5mm silicon carbide LED 3000mcd
led green Gallium phosphide

Abstract: silicon carbide LED silicon carbide
Text: /GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InG aAlP - Indium Gallium Aluminum Phosphide InG aAlP - Indium Gallium Alum inum , - Gallium Phosphide/Gallium Phosphide SIC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride GaN - Gallium


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PDF IR941 IR881 IR851 4500K 6500K 8000K 2000mcd 200mcd 4200mcd 6500mcd led green Gallium phosphide silicon carbide LED silicon carbide
Improving Front Side Process Uniformity by Back-Side Metallization

Abstract: No abstract text available
Text: compressive silicon nitride film in a Novellus PECVD tool. The nitride thickness was measured on a Nanospec , a short nitride etch in a RIE tool. Standard etch chemistry with SF6 being the main etch gas was used for the experiment. The etch recipe was created to remove about 2500A of nitride so that there was enough silicon nitride remaining on the wafer for CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA mapping. The nitride thickness was measured again for thickness


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Not Available

Abstract: No abstract text available
Text: Resistant Tantalum Nitride Film – Our versatile chip resistors are also available with tantalum nitride resistive film. Tantalum nitride is a self passivating film with superior moisture resistance , Passivated Nichrome Passivated Nichrome Passivated Nichrome Tantalum Nitride Resistance Range , Industrial Thick Film Chip Resistor Passivated Nichrome Tantalum Nitride Passivated Nichrome Ruthenium Tantalum Nitride Tantalum Nitride Tantalum Nitride Resistance Range 10 Ω to 3 MΩ 10


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PDF VMN-SG2168-1310
LORIN

Abstract: 3P3T switch high voltage diode high voltage diodes normal radar circuit PECVD mesa diode
Text: by modifying the PIN structure and incorporating nitride under the transmission lines. A description of the voltage limitations of this underlying nitride film and the use of test structures to , . This limitation was easily remedied by depositing a second layer of compressive nitride 3000 angstroms thick to the first for a total of 4000 angstroms. Our decision to use a composite nitride film permitted us to combine two nitride layers of sufficient thickness to support large potentials while


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D150

Abstract: D2240 D257 D412 E595 D149 TPLITM220
Text: performance leader T-pliTM 200 is a premium gap filler. A unique blend of boron nitride and silicone , boron nitride filled silicone elastomer Boron nitride filled silicone elastomer Boron nitride , Thicknesses: 0.025" (0.64mm) 0.100" (2.54mm) 0.180" (4.57mm) T-pliTM 260 Boron nitride filled Boron nitride filled silicone elastomer silicone elastomer 3.40 ASTM D150 0.040" (1.02mm) 0.120 , Composition Boron nitride filled, silicone elastomer Boron nitride filled, silicone elastomer


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Gunn Diode

Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Text: DC4402 SILICON NITRIDE CHIP CAPACITOR 203 16 Product List (continued) TYPE No. DESCRIPTION 164403 DC4404 SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR 203 203 203 203 203 203 I C lt lllll DC4412 SIUCONNITRJDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR SILICON NITRIDE CHIP CAPACITOR 203 203


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PDF DA1304 DA1307 DA1321 DA1321-1 DA1338 DA1338-1 DA1338-2 DA1338-3 DA1349-2 DA1349-4 Gunn Diode Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
D149

Abstract: D150 D2240 D257 D412 E595
Text: outstanding properties are the result of a proprietary boron nitride filler in the composition. The high , T-flexTM 620 Construction & Composition T-flexTM 640 T-flexTM 660 Reinforced boron nitride Boron nitride filled filled silicone elastomer silicone elastomer T-flexTM 680 T-flexTM 6100 Boron nitride filled silicone elastomer Boron nitride filled silicone elastomer Boron nitride filled , T-flexTM 6120 T-flexTM 6130 Construction Composition Boron nitride filled, silicone elastomer


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2001 - led green Gallium phosphide

Abstract: ir941 IR851 silicon carbide AG10K silicon carbide LED Gallium phosphide
Text: Phosphide /Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InGaAIP - Indium Gallium Aluminum Phosphide InGaAIP - , Aluminum Phosphide GaP/GaP - Gallium Phosphide/Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride Super Pure Yellow 2.1 Yellow Incand White Pale White Cool White 2.1 3.6 3.6 3.6


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PDF IR941 IR881 IR851 PG350 AG10K UB500 4500K 6500K 8000K 2000mcd led green Gallium phosphide silicon carbide silicon carbide LED Gallium phosphide
2013 - PLTT

Abstract: No abstract text available
Text: Resistant Tantalum Nitride Film - Our versatile line of chip resistors are also available with tantalum nitride resistive film. Tantalum nitride is a self passivating film with superior moisture resistance , Industrial Industrial Thick Film Chip Resistor Passivated Nichrome Tantalum Nitride Tantalum Nitride Tantalum Nitride Passivated Nichrome 10 Ω to 3 MΩ 10 Ω to 3 MΩ 10 Ω to 3 , Telecommunications Moisture-resistant tantalum nitride resistor film on high-purity alumina substrate


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PDF protectiv4-9337-2726 VMN-SG2168-1304 PLTT
tantalum nitride

Abstract: A110 VISHAY film resistors
Text: Sacrifices Thin Film Chip Resistors are available in either Nichrome resistor film or Tantalum Nitride. The , Nitride. Test Conclusion TECH NOTE The biggest advantage of the HAST test is that it is much , hermetic packages. Tantalum Nitride resistor films have typically been the film of choice but require , , costly hermetic packaging or use of tantalum nitride films. This Tech Note is intended to be a , . The moisture resistance of tantalum nitride depends on the proper thickness of Tantalum Pentoxide


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PDF 29-Jun-07 tantalum nitride A110 VISHAY film resistors
Not Available

Abstract: No abstract text available
Text: MNS chips use silicon nitride dielectric upon a highly doped silicon substrate. This subs.rate acts , nitride dielectric was chosen in preference to an oxide or a ceramic. The critical design considerations are very high insulation resistance, low dissipation factor and ruggedness. Silicon nitride offers , Q factor to give minimum losses. The high dielectric breakdown strength of silicon nitride , capacitance values to be obtained with small chip sizes. The higher dielectric constant of a nitride


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PDF CT3441-2
2007 - silicon carbide LED

Abstract: silicon carbide led green Gallium phosphide arsenic
Text: Phosphide /Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride InGaAIP - Indium Gallium Aluminum Phosphide InGaAIP - , Aluminum Phosphide GaP/GaP - Gallium Phosphide/Gallium Phosphide SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride SiC/GaN - Silicon Carbide/Gallium Nitride Super Pure Yellow 2.1 Yellow Incand White Pale White Cool White 2.1 3.6 3.6 3.6


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PDF IR941 IR881 IR851 PG350 AG10K UB500 4500K 6500K 8000K 2000mcd silicon carbide LED silicon carbide led green Gallium phosphide arsenic
2002 - RFP-100200N4Z50-2

Abstract: No abstract text available
Text: Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features · DC ­ 2.0 GHz · 10 Watts Aluminum Nitride SMD Terminations Model RFP-100200N4Z50-2 Aluminum Nitride Terminations 50 ohms, ±2% DC - 2.0 GHz 10 Watts , inches. Specifications subject to change without notice. · Aluminum Nitride (AlN) Ceramic · Surface , 251369 1 Aluminum Nitride SMD Terminations Model RFP-100200N4Z50-2 Typical Performance


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PDF RFP-100200N4Z50-2 MIL-E-5400. RFP-100200N4Z50-2
Not Available

Abstract: No abstract text available
Text: volume to the hybrid circuit and allied industries. Nichrome or tantalum nitride resistor material can be , array of long term stability curves for nichrome and tantalum nitride resistors are displayed on the , nichrome and tantalum nitride are available on silicon or ceramic substrates. The application of these , recommended for the highest density with slightly lower long term stability. Tantalum nitride on silicon is recommended for use in non-hermetic, high moisture operating environments. Tantalum nitride on alumina is the


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PDF 10ppm/
2002 - RFP-125N50TS

Abstract: SN63 SN96 125N50
Text: : Lead(s): Thick film Aluminum nitride ceramic Alumina ceramic Copper, nickel plated per QQ-N , Resistance Value: Frequency Range: Power: V.S.W.R.: · Aluminum Nitride (AlN) Ceramic · Welded Silver Leads · Non-Nichrome Resistive Element Aluminum Nitride Flangeless Terminations Model RFP-125N50TS Aluminum Nitride Terminations 50 ohms, ±5% DC - 5.0 GHz 125 Watts 1.25:1 Notes: Tolerance is ±.010 , Nitride Flangeless Terminations Model RFP-125N50TS Typical Performance Suggested Mounting


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PDF QQ-N-290 RFP-125N50TS RFP-125N50TS SN63 SN96 125N50
2002 - RFP-375375N6Z50-2

Abstract: No abstract text available
Text: Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features · DC ­ 2.0 GHz · 30 Watts Aluminum Nitride SMD Terminations Model RFP-375375N6Z50-2 Aluminum Nitride Terminations 50 ohms, ±2% DC - 2.0 GHz 30 Watts , inches. Specifications subject to change without notice. · Aluminum Nitride (AlN) Ceramic · Surface , Nitride SMD Terminations Model RFP-375375N6Z50-2 Typical Performance Suggested Mounting


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PDF RFP-375375N6Z50-2 MIL-E-5400. RFP-375375N6Z50-2
Dielectric Constant Silicon Nitride

Abstract: 22v10 pal 22V10* die 3702c capacitors coefficient of thermal expansion hasp cpu mcm military mcm cpu
Text: substrate material, which will be changed from silicon to aluminum nitride. The aluminum nitride has twice , speed, power dissipation and low cost. The basic module will consist of an aluminum nitride substrate , nitride substrate by a deposition process with a polymer, bisbenzocyclobutene (BCB) for dielectric layers , Nitride Substrate Aluminum nitride (AlN) is used as the substrate and bottom of the package because it is , oxide. By attaching the die directly to the aluminum nitride substrate, heat transfer is optimized (see


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tantalum nitride

Abstract: smd resistor network HERMETIC SMD VSOR2000S1 MPH HERMETIC WOMC Molded, SC70 Thin Film Resistor, Surface Mount Network
Text: . . . . .10 TAMELOX OSOP Series . . . . . . .16 Narrow 0.150 Inches TANTALUM NITRIDE Medium 0.173 Inches VSSR Series . . . . . . .18 TANTALUM NITRIDE VTSR Series . . . . . . .18 TAMELOX or Narrow 0.150 Inches ORN Series . . . . . . . .12 TANTALUM NITRIDE , TANTALUM NITRIDE Wide 0.300 Inches VSOR Series . . . . . . .18 VSOR2000S1 . . . . . . .25 , .29 TANTALUM NITRIDE TAMELOX Wide 0.290 Inches CFP200, 201, 202 . . . .38


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PDF OT-23 OT-143 27-Feb-07 CFP200, tantalum nitride smd resistor network HERMETIC SMD VSOR2000S1 MPH HERMETIC WOMC Molded, SC70 Thin Film Resistor, Surface Mount Network
Not Available

Abstract: No abstract text available
Text: Tantalium Nitride Thin film on ceram ic substrates Ruthenium Oxide Thick film on ceramic substrates Tantalium Nitride Thin film on Alum inium Nitride substrates «'»lit iiiCi RADI ALL 7 COAXIAL , frequency and low power attenuators use Tantalum Nitride thin film deposits on Alum ina substrates. · High frequency and medium power attenuators use Tantalum Nitride thin film deposits on Alum inium Nitride , sticked to a shape of Aluminium Nitride as a cooling sink. RADIALL has decided to suppress Beryllium


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