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HE4000B

Abstract: HEF40240B HEF40240BP he4000b family CD schematic diagram Mullard ttl mullard locmos
Text: Specifications r? Mullard September 1982 HEF40240B buffers J TRUTH TABLE 'HZH?' mAjt inputs output ln , r? Mullard r September 1982 HEF40240B buffers A.C. CHARACTERISTICS Vss = 0 V; Tamb = 25 CIC , . < < -tfLH-'-xTHl a < a> 0. O _i jj > ILIi Q r? Mullard September 1982 FAMILY SPECIFICATIONS These , specified in the individual device data sheet. The LOCMOS HE4000B family devices will operate over a , mW -65 to+ 150 °C -40 to +85 °C \ S September 1982 Mullard r? Octal buffers with 3


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PDF HEF40240B HEF40240B HE4000B HEF40240BP he4000b family CD schematic diagram Mullard ttl mullard locmos
PCF0700

Abstract: PCF0450 pcf 0700 philips PCF0330 pcf0700 philips HEF4000B Family specifications sot154b0 SOT134 hef4526 PCC0330
Text: gate utilization of at least 90% • HE4000B family compatible Ti Mullard a May 1983 1 CMOS GATE , Mullard r? PCF/PCC0330; 0450; 0700; 1100 ga1:e array family J CMOS GATE ARRAYS PACKAGE OUTLINES , _ chip carrier 44* . - - - 68* . - - - Not yet available. r? Mullard May 1983 3 CMOS , , D.C. CHARACTERISTICS and A.C. CHARACTERISTICS. May 1983 ^ i Mullard f7 PCF/PCC0330; 0450; 0700 , to +85 °C -55 to + 125 °C V Mullard May 1983 CMOS GATE ARRAYS Q. cl > 10 :> 7c£ > Â


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PDF PCF/PCC0330; -40to PCF0330, PCFCI450, PCF0700 PCF1100. HEF4071B HEF4724B HEF4072B HEF4731B; PCF0450 pcf 0700 philips PCF0330 pcf0700 philips HEF4000B Family specifications sot154b0 SOT134 hef4526 PCC0330
pcf0700

Abstract: hef401068 HEF4000B Family specifications pcf0700 philips PCF0330 PCF0450 HEF4000B HEF4731B hef4011 philips PCF1100
Text: /SSIO • Macrodata • Philips LOCMOS testers 1650TG • Tektronix S3260 series Mullard 18 , max. 34 • Supply voltage range 3 to 15 V u Mullard r April 1982 DEVELOPMENT SAMPLE DATA , gate utilization of at least 90% • HE4000B family compatible Ti Mullard a May 1983 2 PCF0700 , . The family specifications are given on the next 7 pages. April 1982 1 r Mullard r? CMOS GATE , Mullard r? PCF/PCC0330; 0450; 0700; 1100 gate array family J CMOS GATE ARRAYS PACKAGE OUTLINES The


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PDF PCF0700 IPCC0700 PC0700 PCF0700 PCC0700, HEF4071B HEF4724B HEF4072B HEF4731B; HEF4073B hef401068 HEF4000B Family specifications pcf0700 philips PCF0330 PCF0450 HEF4000B HEF4731B hef4011 philips PCF1100
4017BP

Abstract: 4013BP 4069BP 4016BP hef 4011bp IC NAND 4066bp 4040BP 4000BP 40106BP 4030BP
Text: . Signetics LOCMOS satisfies the requirements of the JEDEC 'B' Specification. The Mullard range of LOCMOS ICs , ) general description LOCMOS is completely pin, function and type number compatible with the 4000 and 14000 families. Compared with ordinary CMOS, LOCMOS circuit geometries are smaller and stray capacitances consequently lower. Switching speeds are thus faster and power consumption lower. Furthermore, LOCMOS has; an , comparison with TTL, LOCMOS has a much lower power consumption—almost zero on standoy. Noise immunity is


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PDF HEF4737B HEF4737V CI0000 C1000 C20000 HEF4S43S idi05 idi06 idi04 idi07 4017BP 4013BP 4069BP 4016BP hef 4011bp IC NAND 4066bp 4040BP 4000BP 40106BP 4030BP
GFB7400D

Abstract: FEY101B EF184 Rifa pmr 2026 TCA290A ORP52 ITT A2610 GZF1200 Mullard Mullard quick reference guide YD 6409
Text: c/o Thornlite SEMICONDUCTORS Mullard Profileof Gothic The beginning of Gothic dates back to , distribution by becoming the first to hold the Mullard franchise, stocking and selling the Mullard range of , course Mullard Ltd.’ Though Gothic is a firm believe in broadline distribution it alsi believes , that we hold en­ hance and complement the exten­ sive range of Mullard products’. , five year development plan currently being implemented. ‘Because of anticipated growth in Mullard


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NKT677

Abstract: NKT612 AD149 NKT275 1/equivalent transistor ac127 ORP12 GEX34 sft353 OC171 equivalent ac128
Text: IDENTIFICATION Telefunken AC107 Mullard AC108 AC109 AC113 Siemens Siemens Mazda AC114 , or driver Mullard AC134 AC137 AC154 Ratio detector Signal Diode Bias Voltage Stabiliser Bias Voltage Stabiliser Class B push-pull A.F. output Siemens Philips Mullard AC157 AC106 Telefunken Mullard Mazda Mullard Telefunken AC121 AC125 AC126 AC128 AA113 AA119 AA120 AA129 , AIF114 Mullard Mullard Telefunken Mullard Mullard NPN Class B output Class B output Mixer or


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PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 AD149 NKT275 1/equivalent transistor ac127 ORP12 GEX34 sft353 OC171 equivalent ac128
QY5-500

Abstract: jan 8168 c4 rf LA-7880 2X40 LA7880
Text: JANUARY 1961 (1) I Mullard I Page D1 QY5-500 R.F. POWER TETRODE CLASS 'C' AMPLIFIER (ANODE AND , 2x340 W 1.68 2.25 2.22 kW 20 16 26 kn 74 76.5 76.5 % 4.7 5.0 5.0 % _ .(T^, _ - 1 Mullard I - , BSF Base JANUARY 1961 (1) Mullard I Page D5 R.F. POWER TETRODE QY5-500 0 a |8I04| B5K Base , VOLTAGE WITH CONTROL-GRID VOLTAGE AS PARAMETER. Ve2 = 600V. MARCH 1»«1 (1) I Mullard I Page CI QY5 , PARAMETER. Vg2 = 600V. _.tf^Y_ - Mullard - MARCH 1961 (1) V^^J Page C2 R.F. POWER TETRODE QY5


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PDF 75Mc/s QY5-500 120mA) QY5-500 jan 8168 c4 rf LA-7880 2X40 LA7880
74106

Abstract: SBB2632D SBB2632E SBB2632P
Text: ? Fig.1 Mullard November 1980 DEVELOPMENT SAMPLE DATA nade available mply thaï th.- t s fier ived , -86B) C7 Mullard December 1982 SBB2632P SBB2632D SBB2632E _J V PINNING Address inputs- Data , 1980 r Mullard C7 SBB2632P,D,E V CS2/CS2/NC CS1/CS1/NC PINNING no. type. designation function , 'Handing MOS Devices'). December 1982 Mullard 32,768 bit static ROM SBB2632P SBB2632D SBB2632E , 0.4 10 10 m A V V MA PF V V juA pF c? Mullard November 1980 32 768-bit static ROM


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PDF SBB2632P SBB2632D SBB2632E SBB2632 OT-101) SBB2632P, OT-94) SEIB2632D OT-86B) M82-2113/RE 74106 SBB2632D SBB2632E
TD1100

Abstract: L75C TD1100A Mullard
Text: 5.5 1500 to 2000 5.0 >2000 4.5 , Mullard I JANUARY 1959 (1) ' ^¡¡^f Pag« DÏ DISC SEAL TRIODE TDI-IOOA .-8-I-j + 0-2 All dimensions in mm 1439SI JANUARY 195» (1) I Mullard I Page CI , APRIL 1959 (1) I Mullard | Page C3 DISC SEAL TRIODE GRID CURRENT PLOTTED AGAINST ANODE VOLTAGE WITH GRID VOLTAGE AS PARAMETER TDI-IOOA APRIL 1959 (1) I Mullard I Page C4 DISC SEAL TRIODE TDI-IOOA CONSTANT GRID CURRENT CURVES APRIL 195» (1) Mullard Paga CS TDI-IOOA DISC SEAL TRIODE APRIL 1959 (1


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PDF 2500Mcjs. 2500Mc/s TD1100 L75C TD1100A Mullard
10A fast Gate Turn-off Thyristor

Abstract: M2739 M2778 thyristor equivalent Mullard Thyristor 1000R Mullard Diode IEC134 gt250 V125
Text: electrically isolated. FASTON terminal version (BTW162D) available on request. ZJ Mullard November 1987 , heatsink compound Rtf, m(j-h = 0-2 K/W junction Fig.2 Equivalent thermal network. u Mullard November , Mullard November 1987 BTW162DV SERIES THYRISTOR Fig.5-Tj = 25 °C;-Tj = 125 °C; tp=200iis. 15 q , (linear to VoRMmax): 'T = 100 A; 1p - 150jis; Tj " 125 °C; maximum values. November 1987 Mullard U , Energy per pulse (J) x No. of pulses per second. For pulse widths > 100 ms use Fig.4. u Mullard


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PDF BTW162DV BTW162IDV- 1000r m2778 M87-1523/RST 10A fast Gate Turn-off Thyristor M2739 M2778 thyristor equivalent Mullard Thyristor 1000R Mullard Diode IEC134 gt250 V125
2x36

Abstract: Power Triode "Power Triode" VALVE DRIVER AMPLIFIER Mullard 425 x363 mullard EL37 I500 triode push-pull CLASS C
Text: kíí 897 1,048 1,213 W 3.0 2.9 2.9 0/ /o ISSUE 3 I Mullard I MZ2-200 857-1 MZ2-200 POWER TRIODE , \ 1.04 kg. ,tr=Y_ - Mullard - ISSUE 3 ' MZ2-200 857-2 POWER TRIODE Directly-heated power triode , transformer. ISSUE 3 I Mullard I MZ2-200 857-1 MZ2-200 POWER TRIODE Directly-heated power triode rated , holder, Type MVH16, available from Mullard Ltd. ■«T^V Mullard MZ2-200 857-4 POWER TRIODE , Mullard I MZ2-200 857-1 MZ2-200 POWER TRIODE Directly-heated power triode rated for a maximum anode


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PDF MZ2-200 2x364 2x363 2x365 MZ2-200 2x36 Power Triode "Power Triode" VALVE DRIVER AMPLIFIER Mullard 425 x363 mullard EL37 I500 triode push-pull CLASS C
BTY41

Abstract: BTY48 BTY42 BTY43 BTY44 BTY45 BTY46 BTY47
Text: Mullard - MAY 1961 (1) ' V^^l Page D1 500 V 400 V 480 V 480 V 10 V 10 V 250 mV 250 mV 5.0 V 5.0 V , \ 30 lb. in _ .(T^Y _ -I Mullard I - MAY IMI (1) V^^/ Page D2 SILICON CONTROLLED RECTIFIER BTY4I , a thermal shunt. MAY 1961 (1) I Mullard I Page D3 BTY4I Series SILICON CONTROLLED RECTIFIER , 14.27 _.tr^,_ - Mullard - MAY 1941 (1) ' t^ggjj Page D4 SILICON CONTROLLED RECTIFIER BTY4I Series 5 , ) MAXIMUM FORWARD CONDUCTING CHARACTERISTICS _, Mullard - MAY 1961 (1) 1 H^^; 1 Paie CI BTY4 !


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PDF BTY41, BTY42, BTY43, BTY44, BTY45, BTY46 BTY47 50c/s BTY41 BTY48 BTY42 BTY43 BTY44 BTY45
1026Y

Abstract: Signetics OR Mullard SBB2633D SBB2633E SBB2633P sot86b
Text: Mullard November 1980 DEVE LOPMENT SAMPLE DATA This in form.'.it ion is derived from development sii , -lead DIL; ceramic: (SOT 94) SBB2633E: 24-lead DIL; metal-ceramic (SOT-86B) Mullard December 1982 , , appropriate to handling MOS devices (See 'Handling MOS Devices'). December 1982 r Mullard C7 SBB2633P , Notes). November 1980 f Mullard TÌ 32,768-bit static ROM SBB2633P SBB2633D SBB2633E RATINGS , 10 10 mA V V MA pF V V p A pF r7 Mullard November 1980 32 768-bit static ROM SBB2633P,D,E


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PDF SBB2633P SBB2633D SBB2633E SBB2633 24-lead OT-101) SBB2633P, OT-94) SBB2633D 24-ILEAD 1026Y Signetics OR Mullard SBB2633E sot86b
mullard capacitors

Abstract: HXA100 HIXA230-XXX HXA220 MLA24 MLA36 Mullard application notes
Text: typ. typ. typ. -4,5 t5% V 30 to 125 °C 0,5 ns 1,8 2,3 W W rv Mullard \ March 1982 , levels are automatically connected to each logic cell selected. March 1982 Mullard Master-slice , cross over the sites and their number may be limited by the cells in the sites. r7 Mullard \ r , . 0,5 ns 0,4 ns 40 % 1,0 ns See also Family Specifications. March 1982 V Mullard Master-slice , °.7 ns- r7 Mullard a March 1982 HXA220-XXX HXA230-XXX ^ input cell Fig. 5 Input cell. VCC2


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PDF HXA220-XXX HIXA230-XXX HXA220 MLA24) HXA230--XXX MLA36) M82-1157J mullard capacitors HXA100 HIXA230-XXX MLA24 MLA36 Mullard application notes
qqv06-40a

Abstract: QQY06-40A rt67 2X15 qqv0640a ct milliard Mullard valve data QQV06-40 qqv06/40a
Text: stated limit. ISSUE 4 I Mullard [ QQV06-40A 158-1 QQY06-40A v H F ro~ Beam power double tetrode , Mullard [ QQV06-40A 158-4 V.H.F. POWER DOUBLE TETRODE Beam power double tetrode rated for a maximum , these items can be obtained from the Industrial Technical Service Dept., Mullard Ltd. WEIGHT Valve only f 2.3 oz \6S g ISSUE 4 I Mullard [ QQV06-40A 158-5 QQY06-40A V.H.F. POWER DOUBLE TETRODE , :92" B7A Base All dimensions inmm ISSUE 4 I Mullard [ QQV06-40A 158-6 V.H.F. POWER DOUBLE


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PDF QQY06-40A QQV06-40A 500Mc/s. QQY06-40A rt67 2X15 qqv0640a ct milliard Mullard valve data QQV06-40 qqv06/40a
Mullard

Abstract: No abstract text available
Text: 1.7 W D„„ 10 "„ l[;2(max. sig.) 6.3 mA MAY 1962 I Mullard I Page C? EL9I OUTPUT PENTODE , 1.0 W lload 32 25 % _ - Mullard - MAY 1962 ' Page D3 EL9I OUTPUT PENTODE DESIGN CENTRE RATINGS , CURRENT PLOTTED AGAINST CONTROL-GRID VOLTAGE WITH SCREEN-GRID VOLTAGE AS PARAMETER MAY 1942 | Mullard , CONTROL-GRID VOLTAGE AS PARAMETER. Vg2 = 150V MAY 1962 I Mullard I Pag« C8 OUTPUT PENTODE EL9I ANODE AND , 1962 I Mullard I Page C? EL9I OUTPUT PENTODE ANODE AND SCREEN-GRID CURRENTS PLOTTED AGAINST ANODE


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PCE2112

Abstract: PCE2112T S25112 PCE2112P lcd repairing sot158
Text: Mullard r? LCD driver PCE2112 J v_ CHARACTERISTICS (continued) <: I» <: a LUI _II a S , 10% - LWL — DISABLE LOAD 7Z84 541.1 TI Mullard February 1982 PCE2112 J V DLEN CL.B _J I , with DLEN is LOW) and the driver is ready to receive new data. January 1982 Mullard r? LCD driver , function of supply voltage; Tamb = 25 °C. TI Mullard February 1982 PCE2112 _y V BUS DRIVER , February 1982 Mullard r? DEVELOPMENT SAMPLE DATA DATA -»-CLB -»-DLEN1 DLEN2 -*- 8-DIGIT PLUS 8


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PDF PCE2112 PCE2112 PCE2112T S25112 PCE2112P lcd repairing sot158
PCB8573

Abstract: pcb*8573 MRFE18010 PCB857
Text: Fig. 1 Block diagram. Q-t- J_L_L PACKAGE OUTLINE 16-lead DIL; plastic (SOT 38). Ti Mullard , every four years. Cycle lengths are shown in Table 1. * Output open drain n-channel. \ / Mullard 2 , or external controlled POWF can be selected by input EXTPF as shown in Table 2. r? Mullard , outputs is cut off when the supply voltage V Vdd~vSS2 = \ / 4 September 1982 \ / Mullard Clock , which are controlled by the master are the "slaves". 7Z87004 Fig. 5 System configuration. Ti Mullard


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PDF PCB8573 PCB8573 pcb*8573 MRFE18010 PCB857
GXB10415D

Abstract: GXB10415 GXB10415A GXB10415AD
Text: 830 mW PACKAGE OUTLINES GXB10415D; GXB10415AD; 16-lead DIL; ceramic (SOT-74). m Mullard July 1980 , less positive voltage) = 0 X = state is immaterial Mullard r> GX family yv GXB10415 GXB10415A , -1,045 V VlLT -1,490 -1,475 -1,450 V vILmin -1,870 -1,850 -1,830 V Fig. 3. M81-1073Y Mullard , July 1980 Mullard r7 yV. GXB10415 GXB10415A 1024-bit RAM GX family A.C. CHARACTERISTICS VEE = , -1073Y Mullard July 1980 GXB10415 GXB10415A 1024-bit RAM V INPUT WAVEFORM 25/jF VCC = +2V £ io. mF


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PDF GXB10415 GXB10415A 1024-bit 0415A GXB10415 16-LEAD GXB10415D GXB10415A GXB10415AD
P100D

Abstract: QQV04-16 2X40
Text: 54 60 0 ' /o 63 50 44.5 mm mm mm MAY 1941 (1) I Mullard I Page D2 DOUBLE TETRODE QQV04 , 66871 Loctal base with separate anode pins All dimensions in mm MAY 19«! (1) I Mullard I Page D3 , PARAMETER. Vg2 = 180V MAY 1961 (1) I Mullard I Page C1 QQV04-16 DOUBLE TETRODE SCREEN-GRID CURRENT , Mullard I Pace CI DOUBLE TETRODE QQV04-16 CONTROL-GRID CURRENT PLOTTED AGAINST ANODE VOLTAGE WITH CONTROL-GRID VOLTAGE AS PARAMETER. Vg2 = 180V MAY 1961 (1) I Mullard I Page C3 QQV04-16 DOUBLE TETRODE


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PDF 960Mcjs QQV04-16 P100D QQV04-16 2X40
"Power Triode"

Abstract: transmitting triode 20kw Triode Power Triode RF Power Mullard
Text: ) I Mullard I Page D1 TYS5-2000 R.F. POWER TRIODE jBL Mullard FEBRUARY 19Î0 (1) V^^ Pag® D2 , CONTROL-GRID VOLTAGE AS PARAMETER FEBRUARY <960 (1) I Mullard I Page CI TYS5-2000 R.F. POWER TRIODE CONSTANT CURRENT CURVES FEBRUARY 1960 (1) I Mullard I Page C2


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PDF TYS5-2000 "Power Triode" transmitting triode 20kw Triode Power Triode RF Power Mullard
Intermediate frequency transformer 455

Abstract: Mullard
Text: 0.65 23 12 0.47 400 3000 9840 25 0.65 23 12 0.47 JANUARY 1961 (1) I Mullard I Page C3 TD2 , . 170 W Ik max. 295 mA ik(pk) max. 2.3 A -Vg max. 300 V lg max. 85 mA Rg_r max. 5.0 kfl - Mullard , 1961 (1) I Mullard I Pag« D4 DISC SEAL TRIODE TD2-400A a JANUARY 1961 (1) Mullard Page D3 , JANUARY 1961 (1) jQL Mullard Page D3 TD2-400A DISC SEAL TRIODE GRID CURRENT PLOTTED AGAINST ANODE VOLTAGE WITH GRID VOLTAGE AS PARAMETER JANUARY 1961 (1) , Mullard I Page C2 DISC SEAL TRIODE


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PDF TD2-400A 470Mc/s. 470Mc/s 900Mc/s 600Mc/s) TD2-400A 600Mc/s Intermediate frequency transformer 455 Mullard
Gate Turn-Off Thyristors

Abstract: diode lt 445 gto 10A GTO switching test gate turn-off M1444 alg 05 M8516 GTO switching circuit TO-238AA
Text: "7 Mullard November 1985 BTV70D SERIES _Jv. RATINGS Limiting values in accordance with the Absolute , thermal network. m Mullard November 1985 13 BTV70D SERIES _Jv. GTO CHARACTERISTICS Anode to cathode , . VCL~VD max Fig.5 Inductive load test circuit. "Indicates stray series inductance only m Mullard , *; inductive load; LG < 0.5 mH; Lg < 0.25 piH; Tj = 120 °C. *dV[)/dt is calculated from Ij/Cg. Mullard , Transient thermal Impedance. Mullard November 1985 BTV70D SERIES _A GTO (cont.) M1444 Fig


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PDF BTV70D O-238AA. 1000R 1200R M85-1648/RC Gate Turn-Off Thyristors diode lt 445 gto 10A GTO switching test gate turn-off M1444 alg 05 M8516 GTO switching circuit TO-238AA
BTY48

Abstract: Silicon Controlled Rectifier "Silicon Controlled Rectifier" BTY46 BTY45 BTY44 BTY43 BTY41 BTY42 BTY47
Text: _, Mullard - MAY 1961 (1) 1 H^^; 1 Paie CI BTY4 ! SILICON CONTROLLED RECTIFIER Series 50 , FORWARD AND REVERSE CHARACTERISTICS MAY 1961 (1) ■«T^V I Mullard I Page C2 SILICON CONTROLLED , CONDUCTION ANGLE AS PARAMETER MAY 1961 (1) I Mullard I Page C3 BTY4I Series SILICON CONTROLLED , PARAMETER MAY 1961 (1) I Mullard I Page C4 SILICON CONTROLLED RECTIFIER BTY4I Series 14 12 10 , ) I Mullard I Page Ci SILICON CONTROLLED RECTIFIER BTY4I Series 100 80 60 BTY4I


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PDF BTY48 BTY48 Silicon Controlled Rectifier "Silicon Controlled Rectifier" BTY46 BTY45 BTY44 BTY43 BTY41 BTY42 BTY47
HALF WAVE RECTIFIER CIRCUITS

Abstract: FULL WAVE RECTIFIER CIRCUITS HALF WAVE RECTIFIER ey84
Text: ANODE CURRENT PLOTTED AGAINST ANODE VOLTAGE ISSUE 3 I Mullard I EY84 1157-3 HALF-WAVE RECTIFIER EY84 , 400 ,(r.m4v) BOUNDARY OF OPERATION WITH CAPACITOR OR CHOKE INPUT FILTER - I Mullard | - ISSUE 3 L , »} MINIMUM SERIES ANODE RESISTANCE PLOTTED AGAINST OPEN CIRCUIT SECONDARY VOLTAGE ,r=v Mullard V EY84 , REGULATION CURVES ISSUE 3 I Mullard I EY84 1157-7 EY84 HALF-WAVE RECTIFIER Indirectly heated half-wave rectifier primarily intended for operation at high altitudes. ISSUE 3 I Mullard | L^J EY84 960-8


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