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LTC1728HS5-5 Linear Technology IC 3-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, PLASTIC, SOT-23, 5 PIN, Power Management Circuit
LTC2927ITS8 Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#TRMPBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#PBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#TR Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#TRM Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C

motorola rf Power Transistor Datasheets Context Search

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1993 - transistor equivalent table chart

Abstract:
Text: Transistor Removed SUMMARY The large-signal impedance characterization of RF power transistors has , the products referenced may be discontinued. Systemizing RF Power Amplifier Design Prepared by , equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was


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PDF AN282A/D AN282A mid-1960 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 motorola application note an-548A LARGE SIGNAL IMPEDANCES transistor AN282A 2N3948 2N5941
1993 - motorola rf Power Transistor

Abstract:
Text: , open, or 50 ohm termination. Most of the data which appears on Motorola RF power transistor data , Motorola data sheets for RF power transistors, it may help to know how this data is obtained. The , SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF , equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances


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PDF AN282A/D AN282A mid-1960 motorola rf Power Transistor transistor equivalent table chart 2N6256 AN282A 2N5849 motorola transistor equivalent table AN548A 2N3948 AN548 transistor for RF amplifier
1993 - motorola rf Power Transistor

Abstract:
Text: sizes presently being employed on Motorola rf power transistor packages. Recommended maximum torque , ) package presently used by Motorola for a number of rf power transistors represents a major advancement , Packages RF Application © Motorola , Inc. 1993 Reports 1 AN555 Ceramic Cap Transistor Chip , utilize a fine wire thermocouple rigidly secured to the stud of the rf power transistor for which the , Symbol Thermal Parameter P3 = rf power out of the transistor in watts. This value of Pd is used


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PDF AN555/D AN555 motorola rf Power Transistor an555 motorola transistor handbook dow corning silicone compound motorola rf power
2004 - motorola rf Power Transistor

Abstract:
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9002R2/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband , Power 15 35 - 34 18 50 - 15 37 - - -9 - dB % dB dBm MRF9002R2 2 MOTOROLA RF DEVICE DATA , Power versus Frequency MOTOROLA RF DEVICE DATA MRF9002R2 5 TYPICAL CHARACTERISTICS 12 11 10


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor
2002 - J239

Abstract:
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub­Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N­Channel Enhancement­Mode , ) MRF9002R2 2 No Degradation In Output Power MOTOROLA RF DEVICE DATA VGS1 + C7 Z1 RF1 , MRF9002R2 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 19.5 Pout Pout , OUTPUT POWER (dBm , 985 f, FREQUENCY (MHz) Figure 8. Output Power versus Frequency MOTOROLA RF DEVICE DATA


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PDF MRF9002R2/D MRF9002R2 J239 motorola J122 A113 MRF9002R2 motorola rf Power Transistor mosfet j133 J239 mosfet transistor j122 mosfet J104 MOSFET RO4350
2004 - J133 mosfet transistor

Abstract:
Text: TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array , Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to , 985 f, FREQUENCY (MHz) Figure 8. Output Power versus Frequency MOTOROLA RF DEVICE DATA For , RF POWER MOSFET Freescale Semiconductor, Inc. Designed for broadband commercial and , Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion


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PDF MRF9002R2/D MRF9002R2 J133 mosfet transistor transistor j239 ON SEMICONDUCTOR J122 motorola MOSFET 935 985 transistor mosfet j133 MOTOROLA TRANSISTOR 935 MRF9002R2 A113 RO4350
2002 - motorola MOSFET 935

Abstract:
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9002R2/D The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial , Layout MRF9002R2 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 35 33 Pout , OUTPUT POWER , versus Output Power Figure 8. Output Power versus Frequency MOTOROLA RF DEVICE DATA MRF9002R2 5


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola MOSFET 935 J133 mosfet transistor transistor 955 MOTOROLA sps transistor
2001 - J133 mosfet transistor

Abstract:
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9002R2/D The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial , Layout MRF9002R2 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 35 33 Pout , OUTPUT POWER , versus Output Power Figure 8. Output Power versus Frequency MOTOROLA RF DEVICE DATA MRF9002R2 5


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D J133 mosfet transistor transistor 955 MOTOROLA
1994 - motorola transistor

Abstract:
Text: using a 2N2221A Motorola transistor . (2) a mixer converting a 250 MHz RF and a 300 MHz L.O. to a 50 MHz I.F. frequency using both base injection of the RF and L.O. frequencies for a Motorola MM1941 non­AGC transistor . (3) a mixer circuit of the same scheme as the above but using a Motorola 2N3308 AGC transistor , : Conversion gain is defined as From the equivalent circuit IF Power out RF Power in y11e = , MM1941 Motorola silicon NPN transistor in a 250 MHz mixer converting to a 50 MHz output frequency. The


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PDF AN238/D AN238 motorola transistor Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer AN238 high frequency mixer 2N3308
diode 1N4148 SMD PACKAGE DIMENSION

Abstract:
Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 0 P , Output Power (Watts) out Intermodulation , condition. (continued) REV 7 © MOTOROLA RF DEVICE DATA Motorola , Inc. 1997 MRF6402 1


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PDF MRF6402/D MRF6402 MRF6402 diode 1N4148 SMD PACKAGE DIMENSION motorola 1N4148 SMD DIODE gp 317 Transistor t 2 smd motorola motorola rf Power Transistor ic smd 342 bd135 n BD135 BALLAST MOTOROLA 3 w RF POWER TRANSISTOR NPN
2007 - Motorola transistor smd marking codes

Abstract:
Text: intended for wideband applications in the RF front end. The transistor is widely built as LNA, power , Power amplifier Function VCO Wideband transistor Linear mixer Product RF bipolar transistor , . Buffer Function Power amplifier RF bipolar transistor Wideband transistor MMIC Mixer , transistor and RF our latest UTLP package platform, enabling you to create smaller form factors. MMIC , FREQUENCY CHIPSET VCO Tx RF detector power driver amplifier buffer VCO bra504 NXP


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1995 - motorola rf Power Transistor

Abstract:
Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , Resistor Transistor , BD135 Figure 4. 1.80 ­ 1.88 GHz Test Circuit Electrical Schematic MOTOROLA RF , operating condition. (continued) REV 6 © MOTOROLA RF DEVICE DATA Motorola , Inc. 1994 MRF6402 1


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PDF MRF6402/D MRF6402 MRF6402 MRF6402/D* motorola rf Power Transistor motorola 1N4148 1N4148 5Bp smd transistor data BD135 SMD DIODE gp 317
1994 - Y11E

Abstract:
Text: using a 2N2221A Motorola transistor . (2) a mixer converting a 250 MHz RF and a 300 MHz L.O. to a 50 MHz I.F. frequency using both base injection of the RF and L.O. frequencies for a Motorola MM1941 non­AGC transistor . (3) a mixer circuit of the same scheme as the above but using a Motorola 2N3308 AGC transistor , rights of Motorola Inc. or others. RF Application © Motorola , Inc. 1994 Reports 1 AN238 This , out RF Power in Depending upon the frequencies of operation, the mixer conversion gain will vary


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PDF AN238/D AN238 Y11E Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
1994 - Not Available

Abstract:
Text: MOTOROLA RF DEVICE DATA Pout , OUTPUT POWER (WATTS) 20 15 VCC = 26 V 24 V 10 f = 960 MHz , MOTOROLA Order this document by TP3021/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3021 The TP3021 is designed for 24 V common emitter base station amplifiers , Power = 10 Watts Minimum Gain = 10 dB Class AB IQ = 60 mA 10 W, 960 MHz UHF POWER TRANSISTOR , operating condition. REV 6 MOTOROLA RF © Motorola , Inc. 1994 DEVICE DATA TP3021 1 ELECTRICAL


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PDF TP3021/D TP3021 TP3021 MCM145100/D*
1998 - 500 watts amplifier schematic diagram pcb layout

Abstract:
Text: ) R1 C8 G ps , POWER GAIN (dB) 14.5 MOTOROLA RF APPLICATIONS REPORT AN1670 925 MHz , PCB 8 MOTOROLA RF APPLICATIONS REPORT AN1670 33 G ps , POWER GAIN (dB) 32.5 ­5 , ­30 1060 Figure 21. Power Gain, S11 = f (Frequency) MOTOROLA RF APPLICATIONS REPORT In order , feasibility of a complete RF amplifier using Motorola LDMOS transistors in Class AB. The complete design , is the MRF184, a second generation LDMOS transistor from Motorola . The MRF184 is able to deliver 60


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PDF AN1670/D AN1670 500 watts amplifier schematic diagram pcb layout 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR j497 MRF184 SMD Transistor
transistor BD 135

Abstract:
Text: NPN Silicon RF Power Transistor TPV8200B The TPV8200B is designed for output stages in band IV , using a single fixed tuned circuit. Motorola Preferred Device 190 W, 470 ­ 860 MHz RF POWER , a high power transistor and thermal adaptation is very important for good RF performance (see , Band) Figure 8. Intermodulation versus Peak Power (Dual Sound) TPV8200B 4 MOTOROLA RF DEVICE , Pout = 210 W APL 10­90 (%) Figure 11. Gain versus Output Power MOTOROLA RF DEVICE DATA


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PDF TPV8200B/D TPV8200B TPV8200B TPV8200B/D* transistor BD 135 capacitor J336 bd 109 transistor
Not Available

Abstract:
Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common , ) Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 5th â , Type N Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount


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PDF MRF15030/D MRF15030 MRF15030/D*
2001 - Not Available

Abstract:
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9002R2/D The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial , equipment. · Guaranteed Performance at 960 MHz, 26 Volts Output Power ­ 2 Watts Per Transistor Power Gain ­ , MOS devices should be observed. REV 0 MOTOROLA RF DEVICE DATA © Motorola , Inc. 2001 MRF9002R2


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D
1994 - transistor j326

Abstract:
Text: philosophy and the design of a new generation of RF power transistors which, for Land Mobile products , performance characteristics of two RF devices, soon to be introduced by Motorola Semiconductor Products , power of current 800 MHz transistors does present a number of problems: larger transistor die would , amplifier design would be extremely difficult. High power RF transistors developed for these applications , in a RF transistor . This is to some degree offset by a larger die size but doubling the output


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PDF AN1530/D AN1530 transistor j326 AN1530 broad-band Microwave Class-C Transistor Amplifiers Inside the RF Power Transistor MRF898 Nippon capacitors TRANSISTOR D 1978 uhf amplifier design Transistor
1993 - MRF237

Abstract:
Text: Motorola MRF237 was selected for the driver stage. This common emitter (TO-39) RF power transistor , .: Thermal Rating of RF Power Transistors, AN790. Motorola Semiconductor Products, Inc. RF Application , EFFECTIVE VHF AMPLIFIER FOR LAND MOBILE RADIOS Prepared by: Ken Dufour Motorola Power Products Division , bandwidth and outstanding ruggedness to load mismatch, achieved by use of the new MRF1946A power transistor . It uses a die geometry intended for RF power devices operating in the UHF region. The emitter


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PDF AN955/D AN955 MRF1946A MRF237 Transistor MRF237 MRF transistor MRF1946 equivalent VK200 mrf237 High frequency MRF transistor Motorola transistors MRF MRF transistor 237 MRF high power transistor
CAPACITOR chip murata mtbf

Abstract:
Text: NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large­signal, common , ) Intermodulation Distortion - ­ 30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , POWER (WATTS) 10.3 Figure 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL , MOTOROLA RF DEVICE DATA ­ 35 ­ 40 28 60 50 Pout , OUTPUT POWER (dBm) ­ 30 Gain IMD , Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor , NPN


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PDF MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ IrL 1540 N electrolytic capacitor BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ
1999 - MRF858S

Abstract:
Text: MOTOROLA Order this document by MRF858S/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large­signal, common emitter, class , 800 ­ 960 MHz. CLASS A 800 ­ 960 MHz 3.6 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR · , Rated Output Power CASE 319A­02, STYLE 2 · Will Withstand RF Input Overdrive of 0.85 W CW · Gold , . REV 3 © MOTOROLA RF DEVICE DATA Motorola , Inc. 1998 MRF858S 1 ELECTRICAL CHARACTERISTICS -


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PDF MRF858S/D MRF858S MRF858S transistor C14 358E-06 BD136 MMBT2222ALT1 motorola to-59
motorola sps transistor

Abstract:
Text: MOTOROLA Order this document by MRA0510­50H/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA0510-50H Designed primarily for wideband, large­signal output and driver , ), Class AB 7.0 dB, 500 ­ 1000 MHz 50 W BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network , . (continued) REV 1 © MOTOROLA RF DEVICE DATA Motorola , Inc. 1997 MRA0510­50H 1 ELECTRICAL , f, FREQUENCY (MHz) 900 1000 Figure 2. Output Impedance versus Frequency MOTOROLA RF


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PDF MRA0510 50H/D MRA0510-50H motorola sps transistor MOTOROLA POWER TRANSISTOR 14 905 motorola BALLAST MOTOROLA motorola rf Power Transistor MRA0510-50H
CW 7805

Abstract:
Text: MOTOROLA Order this document by TP3006/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3006 The TP3006 is designed for cellular radio base station , . 5 W, 870 ­ 960 MHz RF POWER TRANSISTOR NPN SILICON · Class AB Operation · Specified 26 Volts , REV 6 © MOTOROLA RF DEVICE DATA Motorola , Inc. 1994 TP3006 1 ELECTRICAL CHARACTERISTICS - , Output Impedances TP3006 2 MOTOROLA RF DEVICE DATA T2 T1 C5 +VCC + C4 C9


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PDF TP3006/D TP3006 TP3006 TP3006/D* CW 7805 CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd SMD DIODE gp 317 smd-transistor DATA BOOK
539 MOTOROLA transistor

Abstract:
Text: 12 MOTOROLA RF /IF DEVICE DATA MC13146 Table 1. VCO Transistor S-Parameters 3.6 Vdc; 50 Q Load , Order this document by MC13146/D (M) MOTOROLA ' MC13146 LOW POWER DC - 1.8 GHz , . RECOMMENDED OPERATING CONDITIONS Characteristic Power Supply Voltage (TA = 25°C) VCC VEE RF Frequency Range , RF /IF DEVICE DATA MC13146 Figure 1. Test Circuit RF In Tuning Volts MOTOROLA RF /IF DEVICE , o- 12 Collector Collector 4 MOTOROLA RF /IF DEVICE DATA MC13146 PIN FUNCTION


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PDF MC13146/D MC13146 MC13146 MC13145) MC33410 MC33411A/B) 539 MOTOROLA transistor
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