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POWEREST Texas Instruments Power Estimation Tool (PET)
MPS48-EP300 GE Critical Power MPS48 DC Power System
MPS48-3R<00 GE Critical Power MPS48 DC Power System
GCP841A_0I6R_USB_S Controller (150043558) GE Critical Power Global Power System Galaxy Pulsar Edge Controller
AXB050X43-SRZ GE Critical Power Austin Lynx 24V:Non-isolated Power Module
CCH75K3 GE Critical Power CCH Series, 75 Watt Swithing Power Supply

motorola rf Power Transistor Datasheets Context Search

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1993 - transistor equivalent table chart

Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
Text: Transistor Removed SUMMARY The large-signal impedance characterization of RF power transistors has , the products referenced may be discontinued. Systemizing RF Power Amplifier Design Prepared by , equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was


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PDF AN282A/D AN282A mid-1960 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
1993 - motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A AN548A transistor equivalent table 2N5849 motorola 2N3948 transistor for RF amplifier 2N5849
Text: , open, or 50 ohm termination. Most of the data which appears on Motorola RF power transistor data , Motorola data sheets for RF power transistors, it may help to know how this data is obtained. The , SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF , equivalent circuit for the transistor . Early attempts to adapt these techniques to power amplifier design , state power amplifier design through the use of large signal transistor input and output impedances


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PDF AN282A/D AN282A mid-1960 motorola rf Power Transistor transistor equivalent table chart 2N6256 AN282A AN548A transistor equivalent table 2N5849 motorola 2N3948 transistor for RF amplifier 2N5849
1993 - motorola rf Power Transistor

Abstract: an555 motorola transistor handbook motorola rf power dow corning silicone compound
Text: sizes presently being employed on Motorola rf power transistor packages. Recommended maximum torque , ) package presently used by Motorola for a number of rf power transistors represents a major advancement , Packages RF Application © Motorola , Inc. 1993 Reports 1 AN555 Ceramic Cap Transistor Chip , utilize a fine wire thermocouple rigidly secured to the stud of the rf power transistor for which the , Symbol Thermal Parameter P3 = rf power out of the transistor in watts. This value of Pd is used


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PDF AN555/D AN555 motorola rf Power Transistor an555 motorola transistor handbook motorola rf power dow corning silicone compound
2004 - motorola rf Power Transistor

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9002R2/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband , Power 15 35 - 34 18 50 - 15 37 - - -9 - dB % dB dBm MRF9002R2 2 MOTOROLA RF DEVICE DATA , Power versus Frequency MOTOROLA RF DEVICE DATA MRF9002R2 5 TYPICAL CHARACTERISTICS 12 11 10


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor
2002 - J239

Abstract: motorola J122 J104 MOSFET j122 mosfet A113 motorola rf Power Transistor mosfet j133 RO4350 MRF9002R2 J239 mosfet transistor
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub­Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N­Channel Enhancement­Mode , ) MRF9002R2 2 No Degradation In Output Power MOTOROLA RF DEVICE DATA VGS1 + C7 Z1 RF1 , MRF9002R2 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 19.5 Pout Pout , OUTPUT POWER (dBm , 985 f, FREQUENCY (MHz) Figure 8. Output Power versus Frequency MOTOROLA RF DEVICE DATA


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PDF MRF9002R2/D MRF9002R2 J239 motorola J122 J104 MOSFET j122 mosfet A113 motorola rf Power Transistor mosfet j133 RO4350 MRF9002R2 J239 mosfet transistor
2004 - J133 mosfet transistor

Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor RO4350 MRF9002R2 A113 mosfet j133 MOTOROLA TRANSISTOR 935
Text: TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array , Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to , 985 f, FREQUENCY (MHz) Figure 8. Output Power versus Frequency MOTOROLA RF DEVICE DATA For , RF POWER MOSFET Freescale Semiconductor, Inc. Designed for broadband commercial and , Watts Per Transistor Power Gain - 18 dB Efficiency - 50% · Designed for Maximum Gain and Insertion


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PDF MRF9002R2/D MRF9002R2 J133 mosfet transistor transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor RO4350 MRF9002R2 A113 mosfet j133 MOTOROLA TRANSISTOR 935
2002 - motorola MOSFET 935

Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9002R2/D The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial , Layout MRF9002R2 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 35 33 Pout , OUTPUT POWER , versus Output Power Figure 8. Output Power versus Frequency MOTOROLA RF DEVICE DATA MRF9002R2 5


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola MOSFET 935 J133 mosfet transistor transistor 955 MOTOROLA sps transistor
2001 - J133 mosfet transistor

Abstract: transistor 955 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9002R2/D The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial , Layout MRF9002R2 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 35 33 Pout , OUTPUT POWER , versus Output Power Figure 8. Output Power versus Frequency MOTOROLA RF DEVICE DATA MRF9002R2 5


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D J133 mosfet transistor transistor 955 MOTOROLA
1994 - motorola transistor

Abstract: Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer 2N3308 AN238 RF Transistor Selection
Text: using a 2N2221A Motorola transistor . (2) a mixer converting a 250 MHz RF and a 300 MHz L.O. to a 50 MHz I.F. frequency using both base injection of the RF and L.O. frequencies for a Motorola MM1941 non­AGC transistor . (3) a mixer circuit of the same scheme as the above but using a Motorola 2N3308 AGC transistor , : Conversion gain is defined as From the equivalent circuit IF Power out RF Power in y11e = , MM1941 Motorola silicon NPN transistor in a 250 MHz mixer converting to a 50 MHz output frequency. The


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PDF AN238/D AN238 motorola transistor Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer 2N3308 AN238 RF Transistor Selection
diode 1N4148 SMD PACKAGE DIMENSION

Abstract: motorola 1N4148 Transistor t 2 smd motorola SMD DIODE gp 317 transistor 431 ab BALLAST MOTOROLA power transistor bd135 1N4148 BD135 MRF6402
Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 0 P , Output Power (Watts) out Intermodulation , condition. (continued) REV 7 © MOTOROLA RF DEVICE DATA Motorola , Inc. 1997 MRF6402 1


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PDF MRF6402/D MRF6402 MRF6402 diode 1N4148 SMD PACKAGE DIMENSION motorola 1N4148 Transistor t 2 smd motorola SMD DIODE gp 317 transistor 431 ab BALLAST MOTOROLA power transistor bd135 1N4148 BD135
2007 - Motorola transistor smd marking codes

Abstract: toshiba smd marking code transistor BFG591 Application Notes transistor smd marking CODE Wb diode varicap BB 112 walkie-talkie transceiver diagram 113 marking code transistor ROHM smd transistor marking A3 sot23 3pin sot323 transistor marking MOTOROLA BFG135 amplifier
Text: intended for wideband applications in the RF front end. The transistor is widely built as LNA, power , Power amplifier Function VCO Wideband transistor Linear mixer Product RF bipolar transistor , . Buffer Function Power amplifier RF bipolar transistor Wideband transistor MMIC Mixer , transistor and RF our latest UTLP package platform, enabling you to create smaller form factors. MMIC , FREQUENCY CHIPSET VCO Tx RF detector power driver amplifier buffer VCO bra504 NXP


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1995 - motorola rf Power Transistor

Abstract: motorola 1N4148 1N4148 BD135 MRF6402 5Bp smd transistor data SMD DIODE gp 317
Text: MOTOROLA Order this document by MRF6402/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The MRF6402 is designed for 1.8 GHz Personal Communications , W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON · Specified 26 V, 1.88 GHz Characteristics Output , Resistor Transistor , BD135 Figure 4. 1.80 ­ 1.88 GHz Test Circuit Electrical Schematic MOTOROLA RF , operating condition. (continued) REV 6 © MOTOROLA RF DEVICE DATA Motorola , Inc. 1994 MRF6402 1


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PDF MRF6402/D MRF6402 MRF6402 MRF6402/D* motorola rf Power Transistor motorola 1N4148 1N4148 BD135 5Bp smd transistor data SMD DIODE gp 317
1994 - Y11E

Abstract: Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
Text: using a 2N2221A Motorola transistor . (2) a mixer converting a 250 MHz RF and a 300 MHz L.O. to a 50 MHz I.F. frequency using both base injection of the RF and L.O. frequencies for a Motorola MM1941 non­AGC transistor . (3) a mixer circuit of the same scheme as the above but using a Motorola 2N3308 AGC transistor , rights of Motorola Inc. or others. RF Application © Motorola , Inc. 1994 Reports 1 AN238 This , out RF Power in Depending upon the frequencies of operation, the mixer conversion gain will vary


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PDF AN238/D AN238 Y11E Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
1994 - Not Available

Abstract: No abstract text available
Text: MOTOROLA RF DEVICE DATA Pout , OUTPUT POWER (WATTS) 20 15 VCC = 26 V 24 V 10 f = 960 MHz , MOTOROLA Order this document by TP3021/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3021 The TP3021 is designed for 24 V common emitter base station amplifiers , Power = 10 Watts Minimum Gain = 10 dB Class AB IQ = 60 mA 10 W, 960 MHz UHF POWER TRANSISTOR , operating condition. REV 6 MOTOROLA RF © Motorola , Inc. 1994 DEVICE DATA TP3021 1 ELECTRICAL


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PDF TP3021/D TP3021 TP3021 MCM145100/D*
1998 - 500 watts amplifier schematic diagram pcb layout

Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor smd transistor JJ m30 smd TRANSISTOR PCB Rogers RO4003 substrate SMD Transistor transistor RF 98 smd MRF184
Text: ) R1 C8 G ps , POWER GAIN (dB) 14.5 MOTOROLA RF APPLICATIONS REPORT AN1670 925 MHz , PCB 8 MOTOROLA RF APPLICATIONS REPORT AN1670 33 G ps , POWER GAIN (dB) 32.5 ­5 , ­30 1060 Figure 21. Power Gain, S11 = f (Frequency) MOTOROLA RF APPLICATIONS REPORT In order , feasibility of a complete RF amplifier using Motorola LDMOS transistors in Class AB. The complete design , is the MRF184, a second generation LDMOS transistor from Motorola . The MRF184 is able to deliver 60


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PDF AN1670/D AN1670 500 watts amplifier schematic diagram pcb layout 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor smd transistor JJ m30 smd TRANSISTOR PCB Rogers RO4003 substrate SMD Transistor transistor RF 98 smd MRF184
transistor BD 135

Abstract: capacitor J336 TPV8200B bd 109 transistor
Text: NPN Silicon RF Power Transistor TPV8200B The TPV8200B is designed for output stages in band IV , using a single fixed tuned circuit. Motorola Preferred Device 190 W, 470 ­ 860 MHz RF POWER , a high power transistor and thermal adaptation is very important for good RF performance (see , Band) Figure 8. Intermodulation versus Peak Power (Dual Sound) TPV8200B 4 MOTOROLA RF DEVICE , Pout = 210 W APL 10­90 (%) Figure 11. Gain versus Output Power MOTOROLA RF DEVICE DATA


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PDF TPV8200B/D TPV8200B TPV8200B TPV8200B/D* transistor BD 135 capacitor J336 bd 109 transistor
Not Available

Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common , ) Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 5th â , Type N Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount


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PDF MRF15030/D MRF15030 MRF15030/D*
2001 - Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9002R2/D The RF Sub­Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N­CHANNEL BROADBAND RF POWER MOSFET N­Channel Enhancement­Mode Lateral MOSFET Designed for broadband commercial , equipment. · Guaranteed Performance at 960 MHz, 26 Volts Output Power ­ 2 Watts Per Transistor Power Gain ­ , MOS devices should be observed. REV 0 MOTOROLA RF DEVICE DATA © Motorola , Inc. 2001 MRF9002R2


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PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D
1994 - transistor j326

Abstract: AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors
Text: philosophy and the design of a new generation of RF power transistors which, for Land Mobile products , performance characteristics of two RF devices, soon to be introduced by Motorola Semiconductor Products , power of current 800 MHz transistors does present a number of problems: larger transistor die would , amplifier design would be extremely difficult. High power RF transistors developed for these applications , in a RF transistor . This is to some degree offset by a larger die size but doubling the output


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PDF AN1530/D AN1530 transistor j326 AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors
1993 - MRF237

Abstract: Transistor MRF237 MRF transistor MRF1946 equivalent VK200 mrf237 High frequency MRF transistor Motorola transistors MRF MRF1946A MRF transistor 237 MRF high power transistor
Text: Motorola MRF237 was selected for the driver stage. This common emitter (TO-39) RF power transistor , .: Thermal Rating of RF Power Transistors, AN790. Motorola Semiconductor Products, Inc. RF Application , EFFECTIVE VHF AMPLIFIER FOR LAND MOBILE RADIOS Prepared by: Ken Dufour Motorola Power Products Division , bandwidth and outstanding ruggedness to load mismatch, achieved by use of the new MRF1946A power transistor . It uses a die geometry intended for RF power devices operating in the UHF region. The emitter


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PDF AN955/D AN955 MRF1946A MRF237 Transistor MRF237 MRF transistor MRF1946 equivalent VK200 mrf237 High frequency MRF transistor Motorola transistors MRF MRF transistor 237 MRF high power transistor
CAPACITOR chip murata mtbf

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Text: NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large­signal, common , ) Intermodulation Distortion - ­ 30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , POWER (WATTS) 10.3 Figure 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL , MOTOROLA RF DEVICE DATA ­ 35 ­ 40 28 60 50 Pout , OUTPUT POWER (dBm) ­ 30 Gain IMD , Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor , NPN


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PDF MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
1999 - MRF858S

Abstract: transistor C14 BD136 MMBT2222ALT1 358E-06 motorola to-59
Text: MOTOROLA Order this document by MRF858S/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large­signal, common emitter, class , 800 ­ 960 MHz. CLASS A 800 ­ 960 MHz 3.6 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR · , Rated Output Power CASE 319A­02, STYLE 2 · Will Withstand RF Input Overdrive of 0.85 W CW · Gold , . REV 3 © MOTOROLA RF DEVICE DATA Motorola , Inc. 1998 MRF858S 1 ELECTRICAL CHARACTERISTICS -


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PDF MRF858S/D MRF858S MRF858S transistor C14 BD136 MMBT2222ALT1 358E-06 motorola to-59
motorola sps transistor

Abstract: MOTOROLA POWER TRANSISTOR 14 905 motorola BALLAST MOTOROLA MRA0510-50H motorola rf Power Transistor
Text: MOTOROLA Order this document by MRA0510­50H/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA0510-50H Designed primarily for wideband, large­signal output and driver , ), Class AB 7.0 dB, 500 ­ 1000 MHz 50 W BROADBAND UHF POWER TRANSISTOR · Built­In Matching Network , . (continued) REV 1 © MOTOROLA RF DEVICE DATA Motorola , Inc. 1997 MRA0510­50H 1 ELECTRICAL , f, FREQUENCY (MHz) 900 1000 Figure 2. Output Impedance versus Frequency MOTOROLA RF


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PDF MRA0510 50H/D MRA0510-50H motorola sps transistor MOTOROLA POWER TRANSISTOR 14 905 motorola BALLAST MOTOROLA MRA0510-50H motorola rf Power Transistor
CW 7805

Abstract: CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd smd-transistor DATA BOOK SMD DIODE gp 317
Text: MOTOROLA Order this document by TP3006/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3006 The TP3006 is designed for cellular radio base station , . 5 W, 870 ­ 960 MHz RF POWER TRANSISTOR NPN SILICON · Class AB Operation · Specified 26 Volts , REV 6 © MOTOROLA RF DEVICE DATA Motorola , Inc. 1994 TP3006 1 ELECTRICAL CHARACTERISTICS - , Output Impedances TP3006 2 MOTOROLA RF DEVICE DATA T2 T1 C5 +VCC + C4 C9


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PDF TP3006/D TP3006 TP3006 TP3006/D* CW 7805 CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd smd-transistor DATA BOOK SMD DIODE gp 317
539 MOTOROLA transistor

Abstract: No abstract text available
Text: 12 MOTOROLA RF /IF DEVICE DATA MC13146 Table 1. VCO Transistor S-Parameters 3.6 Vdc; 50 Q Load , Order this document by MC13146/D (M) MOTOROLA ' MC13146 LOW POWER DC - 1.8 GHz , . RECOMMENDED OPERATING CONDITIONS Characteristic Power Supply Voltage (TA = 25°C) VCC VEE RF Frequency Range , RF /IF DEVICE DATA MC13146 Figure 1. Test Circuit RF In Tuning Volts MOTOROLA RF /IF DEVICE , o- 12 Collector Collector 4 MOTOROLA RF /IF DEVICE DATA MC13146 PIN FUNCTION


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PDF MC13146/D MC13146 MC13146 MC13145) MC33410 MC33411A/B) 539 MOTOROLA transistor
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