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Part Manufacturer Description Datasheet Download Buy Part
RH1034MW-1.2 Linear Technology Micropower Dual Reference
LTC1258CMS8 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.385 V, PDSO8, PLASTIC, MSOP-8, Voltage Reference
LT1019CN-10 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, PDIP, Voltage Reference
LT1019IS-10 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, PDSO, Voltage Reference
LT1021BIN-5 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDIP, Voltage Reference
LT1021CIN-10 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, PDIP, Voltage Reference

motorola diode cross reference Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - diode cross reference

Abstract: diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode pin diode cross reference HSMS-3800
Text: PIN and Schottky Diodes Cross Reference RF/mW Components Surface Mount PIN Diode Selection , HSMP-389F G4 Low Capacitance, High Performance 3 PIN Diode Cross Reference Guide Direct , OBSOLETE NO LONGER IN ALPHA CATALOG 4 PIN Diode Cross Reference Guide, continued Direct Crosses , -05 ALPHA HSMP-3892 SMP1321-15 ALPHA HSMP-3895 5 PIN Diode Cross Reference Guide Direct , GHz) 9 Schottky Diode Cross Reference Guide Direct Crosses Sorted by Part Number Part


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PDF OT-23 HSMP-3800 HSMP-3810 OT-143 HSMP-3802 HSMP-3804 HSMP-4810 HSMP-3812 HSMP-3813 HSMP-3814 diode cross reference diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode pin diode cross reference HSMS-3800
MC34114P

Abstract: mc12073 motorola diode cross reference HANDSET MOTOROLA CT2 MC34018P MC34114 mc2833 HOW MC1496 IS USED AS A FM DETECTION MC145447 Wideband FM Modulator
Text: ANALOG AND INTERFACE INTEGRATED CIRCUITS SELECTOR GUIDE & CROSS REFERENCE MOTOROLA 81 RF , CIRCUITS SELECTOR GUIDE & CROSS REFERENCE Low Battery Indicator MOTOROLA 83 Universal , 7MC­8128Z ANALOG AND INTERFACE INTEGRATED CIRCUITS SELECTOR GUIDE & CROSS REFERENCE MOTOROLA 85 , SELECTOR GUIDE & CROSS REFERENCE MOTOROLA 91 PBX Architecture (continued) MC14LC5540P, DW, FU , INTEGRATED CIRCUITS SELECTOR GUIDE & CROSS REFERENCE MOTOROLA 97 Voice/Data Communication (Digital


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PDF MC13055 MC13155 P/648, D/751B MC3356 MC13156 MC13158 P/738, DW/751D MC34114P mc12073 motorola diode cross reference HANDSET MOTOROLA CT2 MC34018P MC34114 mc2833 HOW MC1496 IS USED AS A FM DETECTION MC145447 Wideband FM Modulator
1994 - UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: . Motorola TVS/Zener Device Data Cross Reference and Index 2-1 CROSS-REFERENCE (continued) Industry , Cross Reference and Index 2-2 Motorola TVS/Zener Device Data CROSS-REFERENCE (continued , 4-17 CF = consult factory representative Motorola TVS/Zener Device Data Cross Reference and , Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for , sheets. A comprehensive Selector Guide and Industry Cross Reference Guide are included to simplify the


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2001 - BUT34 equivalent

Abstract: BU323A equivalent BU108 2N3055 BU100 BU326 MJ3001 equivalent bc 574 transistor TIP34C equivalent BUV22 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34 TM Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER , Peak (1) Free Wheel Diode Forward Current - Continuous Free Wheel Diode Forward Current - Peak Total , Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , 40 A, IB = 4 A) Diode Forward Voltage (IF = 40 A) VCE(sat) Vdc 2.0 3.0 3.5 5.0 VBE(sat


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PDF BUT34 BUT34 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUT34 equivalent BU323A equivalent BU108 2N3055 BU100 BU326 MJ3001 equivalent bc 574 transistor TIP34C equivalent BUV22 equivalent
1999 - MRF212

Abstract: motorola diode cross reference 2N6166 2N5590 transistor mrf212 cross sd1485 motorola transistor cross reference SD1400-2 MRF1946A MICROSEMI RF TRANSISTOR
Text: Products are jointly developing an initial stocking order and pricing strategy. A device cross reference , Motorola Direct Cross SD1013 2N5642 SD1019 2N6166 SD1012 2N5590 SD1018 MRF224 SD1143 Motorola Nearest Cross MRF212 SD1272 MRF1946A SD1485 TPV3250B SD1400 , New Powermite PIN Diode The UPP1000 Series has been introduced by Microsemi's Watertown division to fill the need for a surface mount PIN Diode to perform the antenna switching function in both


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PDF UPP1000 MRF212 motorola diode cross reference 2N6166 2N5590 transistor mrf212 cross sd1485 motorola transistor cross reference SD1400-2 MRF1946A MICROSEMI RF TRANSISTOR
2001 - MJ2955 replacement

Abstract: diode T 3512 H BD581 BU108 tip122 pin configuration motorola diode cross reference MJE-3439 free transistor equivalent book 2sc789 2SA756 2SA814 equivalent
Text: Motorola Bipolar Power Transistor Device Data 3­367 BUT33 FREE­WHEEL DIODE CHARACTERISTICS 50 I , MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33 TM Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER , Peak (1) Free Wheel Diode Forward Current - Continuous Free Wheel Diode Forward Current - Peak Total , Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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PDF BUT33 BUT33 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ2955 replacement diode T 3512 H BD581 BU108 tip122 pin configuration motorola diode cross reference MJE-3439 free transistor equivalent book 2sc789 2SA756 2SA814 equivalent
2001 - 2SC1943

Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference transistor 2SA1046 TRANSISTOR 2sb546 c 3198 transistor TRANSISTOR REPLACEMENT GUIDE transistor Electronic ballast mje13007 BD581 TIP142 TRANSISTOR REPLACEMENT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2 Designer's TM Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient , Collector­Emitter Free Wheeling Diode · Fully Characterized and Guaranteed Dynamic VCE(sat) · "6 Sigma" Process , characteristics - are given to facilitate "worst case" design. 3­724 Motorola Bipolar Power Transistor , Adc IB1 = 0 0.4 4A VCC = 300 V 1.4 8 MJE18004D2 Motorola Bipolar Power Transistor Device Data


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PDF MJE18004D2 MJE18004D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SC1943 bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference transistor 2SA1046 TRANSISTOR 2sb546 c 3198 transistor TRANSISTOR REPLACEMENT GUIDE transistor Electronic ballast mje13007 BD581 TIP142 TRANSISTOR REPLACEMENT
2001 - motorola 415 D2PAK

Abstract: transistor cross reference 2N3055 BU108 DIODE 2N4002 2sc15 transistor bdx54c 726 MOTOROLA TRANSISTORS MOTOROLA TRANSISTOR MJL21194 BU326
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2 Designer's TM Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient , Diode · Fully Characterized and Guaranteed Dynamic VCE(sat) · "6 Sigma" Process Providing Tight and , "worst case" design. 3­306 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , , VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C hFE 20 18 32 26 - @ TC = 25°C @ TC = 125°C 10 7 14 9.5 DIODE


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PDF BUL44D2 BUL44D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C motorola 415 D2PAK transistor cross reference 2N3055 BU108 DIODE 2N4002 2sc15 transistor bdx54c 726 MOTOROLA TRANSISTORS MOTOROLA TRANSISTOR MJL21194 BU326
2001 - transistor bc 647

Abstract: 380 darlington to3 ibm motorola 415 D2PAK BU108 BU326 2N5886 Structure DIODE 2N4002 motorola transistor 2N6547 3427 726 MOTOROLA TRANSISTORS
Text: Region Figure 8. Forward Diode Voltage Motorola Bipolar Power Transistor Device Data 3­257 , MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation , Diode · Fully Characterized and Guaranteed Dynamic VCE(sat) · "6 Sigma" Process Providing Tight and , to change without notice. Motorola Bipolar Power Transistor Device Data 3­253 0.118 .070


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PDF BUD44D2 BUD44D2 Fully32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B transistor bc 647 380 darlington to3 ibm motorola 415 D2PAK BU108 BU326 2N5886 Structure DIODE 2N4002 motorola transistor 2N6547 3427 726 MOTOROLA TRANSISTORS
2001 - pin configuration transistor bd140

Abstract: TRANSISTOR REPLACEMENT GUIDE BU108 Replacement MOTOROLA BDX54 2sA671 transistor Drive IC 2SC3346 BU100 transistor NSD134 BU326
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2 Designer's TM Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient , Diode · Fully Characterized and Guaranteed Dynamic VCE(sat) · "6 Sigma" Process Providing Tight and , characteristics - are given to facilitate "worst case" design. Motorola Bipolar Power Transistor Device Data , TC = 125°C 10 7 14 9.5 DIODE CHARACTERISTICS Forward Diode Voltage (IEC = 1 Adc) (IEC = 2 Adc) @ TC =


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PDF BUL45D2 BUL45D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C pin configuration transistor bd140 TRANSISTOR REPLACEMENT GUIDE BU108 Replacement MOTOROLA BDX54 2sA671 transistor Drive IC 2SC3346 BU100 transistor NSD134 BU326
2001 - 2SA627

Abstract: BD130 TO126 BDX33D equivalent BU108 TIP-551 2N3025 2SC2536 Transistor 3202 1 A 60 BU100 2SD504
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10007 Darlington transistor is designed for high­voltage , Saturation Voltages Leakage Currents Designer's TM Data Sheet MJ10007* * Motorola Preferred Device , devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola , 250 mAdc) (IC = 5.0 Adc, IB = 250 mAdc, TC = 100_C) Diode Forward Voltage (1) (IF = 5.0 Adc) VBE(sat


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PDF MJ10007 Curr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA627 BD130 TO126 BDX33D equivalent BU108 TIP-551 2N3025 2SC2536 Transistor 3202 1 A 60 BU100 2SD504
2001 - MJ3001 equivalent

Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent BDT65C equivalent bd139 equivalent transistor BU108 MJH11021 equivalent darlington tip31
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10005 Darlington transistor is designed for high­voltage , Relay Drivers Motor Controls Deflection Circuits Designer's TM Data Sheet MJ10005* * Motorola , - are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Bipolar Power Transistor Device Data


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PDF MJ10005 MJ10005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ3001 equivalent bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent BDT65C equivalent bd139 equivalent transistor BU108 MJH11021 equivalent darlington tip31
2001 - mj10016

Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent MJE371 equivalent 2sd526 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent D45H11 equivalent replacement
Text: (Vf) of this diode is comparable to that of typical fast recovery rectifiers. 3­462 Motorola , MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for , 10%. REV 1 Motorola Bipolar Power Transistor Device Data 3­461 , ) Base­Emitter Saturation Voltage (IC = 20 Adc, IB = 1.0 Adc) Diode Forward Voltage (2) (IF = 20 Adc) VCE(sat


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PDF MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent MJE371 equivalent 2sd526 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent D45H11 equivalent replacement
2001 - D45H11 equivalent replacement

Abstract: 2N5036 equivalent BU108 BDW93C equivalent MJ10009 BU100 BU326 2SB557 equivalent BD420 equivalent MJE6044 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10009 Darlington transistor is designed for high­voltage , Inductive Loads Saturation Voltages Leakage Currents Designer's TM Data Sheet MJ10009* * Motorola , "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Bipolar Power Transistor Device Data 3­451


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PDF MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 BDW93C equivalent BU100 BU326 2SB557 equivalent BD420 equivalent MJE6044 equivalent
1997 - d2 transistor

Abstract: motorola transistor cross reference AN1543 Electronic Lamp Ballast Design motorola bipolar transistor GUIDE high power bipolar transistor selection motorola diode cross reference an1543 npn pnp transistor bipolar cross reference AN1577 BUL44D2
Text: . D2 Transistor Simplified Cross Section 2 Motorola Applications Data AN1577 Figure 5 shows , MOTOROLA Order this document by AN1577/D SEMICONDUCTOR APPLICATION NOTE AN1577 Motorola , ­ MOTOROLA ­ Toulouse INTRODUCTION ture are probably the most critical issues the designer has , freewheeling diode and an anti­saturation network. This application note presents the interest of the D2 , Emitter Fingers Cross Section During the saturation phase, the base and collector regions are filled


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PDF AN1577/D AN1577 d2 transistor motorola transistor cross reference AN1543 Electronic Lamp Ballast Design motorola bipolar transistor GUIDE high power bipolar transistor selection motorola diode cross reference an1543 npn pnp transistor bipolar cross reference AN1577 BUL44D2
motorola transistor cross reference

Abstract: transistor aaa zero bias diode saturable core oscillator motorola diode cross reference an873/D
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1577/D AN1577 Motorola , MOTOROLA ­ Toulouse INTRODUCTION ARCHIVE INFORMATION Standard Bipolar Transistors Structure: B E , Figure 1. Standard Bipolar Transistor, Two Emitter Fingers Cross Section During the saturation phase , extracted (Figure 2). Motorola Data © Motorola , Applications Inc. 1997 1 ARCHIVE INFORMATION , of two extra devices (D2): a freewheeling diode and an anti­saturation network. This application note


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PDF AN1577/D AN1577 AN1577/D motorola transistor cross reference transistor aaa zero bias diode saturable core oscillator motorola diode cross reference an873/D
2000 - inverter PURE SINE WAVE schematic diagram

Abstract: inverter PURE SINE WAVE schematic PURE SINE WAVE inverter schematic diagram Schematic Diagram 3 phase generator brush 3 phase inverter schematic diagram pic ac motor pure sine inverter schematic diagram dc motor speed pi control using pwm and opamp pure sine wave power inverter schematic "power factor correction" schematic PIC PURE SINE WAVE power inverter schematic diagram
Text: particular "zero cross window." AN1857 14 MOTOROLA Application Note System Hardware +5V_D , 26 MOTOROLA Application Note Power Stage comparator is set by a reference from the dc bus , 16 Order this document by AN1857/D Motorola Semiconductor Application Note AN1857 A 3 , Motorola Microcontroller Division Austin, Texas Software Written By: Radim Visinka, Petr Lidak, Pavel , overall performance. This application note describes such a system based on the Motorola MC68HC908MR32


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PDF AN1857/D AN1857 MC68HC908MR32 inverter PURE SINE WAVE schematic diagram inverter PURE SINE WAVE schematic PURE SINE WAVE inverter schematic diagram Schematic Diagram 3 phase generator brush 3 phase inverter schematic diagram pic ac motor pure sine inverter schematic diagram dc motor speed pi control using pwm and opamp pure sine wave power inverter schematic "power factor correction" schematic PIC PURE SINE WAVE power inverter schematic diagram
2001 - 3904 Transistor

Abstract: BU108 driver ignition coil ignition coil drivers ignition control 2N3055/TRANSISTOR REPLACEMENT GUIDE 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint BU326
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Darlington Transistors The MJE5740 , MJE5741* MJE5742* * Motorola Preferred Device POWER DARLINGTON TRANSISTORS 8 AMPERES 300, 350, 400 , %. (continued) Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 3­640 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , ) Base­Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C) Diode Forward Voltage (2) (IF = 5 Adc


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PDF MJE5740, MJE5740 MJE5741* MJE5742* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 3904 Transistor BU108 driver ignition coil ignition coil drivers ignition control 2N3055/TRANSISTOR REPLACEMENT GUIDE 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint BU326
1998 - UC3843 spice model

Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
Text: . 10 Device Cross Reference , device-type headings, and a Device Cross Reference listing them by featured devices. Documents new to this , Bulletin produced by Motorola Asia-Pacific Group. includes cross references to a selection from , Applications Documents Index Device Cross Reference , Documents Device Cross Reference This quick-reference list indicates where specific components are


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PDF BR101/D ECL300, UC3843 spice model project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
2001 - 2SD418

Abstract: k 3436 transistor TIP33C equivalent IR647 TIP121 transistor BU108 buv18a 2SC1086 BD827 2N3055 transistor equivalent to220
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 SWITCHMODE Series NPN Silicon Power Darlington , "worst case" design. REV 4 Motorola Bipolar Power Transistor Device Data 3­433 , 10 Adc, IB = 400 mAdc, TC = 100_C) Diode Forward Voltage (1) (IF = 10 Adc) VBE(sat) Vdc - - - - , diode can eliminate the need for an external diode to clamp inductive loads. (1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode Is comparable to that of typical fast recovery


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PDF MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 k 3436 transistor TIP33C equivalent IR647 TIP121 transistor BU108 buv18a 2SC1086 BD827 2N3055 transistor equivalent to220
1997 - IGBT SCHEMATIC

Abstract: motorola scr cross reference BJT npn motorola power BJT PNP mosfet base induction heat circuit MGW20N60D BJT characteristics BJT isolated Base Drive circuit GATE ASSISTED TURN-OFF THYRISTORS Drive Base BJT
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1541/D AN1541 Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc , of these attributes. © MOTOROLA Motorola , Inc. 1995 The IGBT is, in fact, a spin­off from , COMPETITOR 1989 2.0 1ST GENERATION MOTOROLA 1993 1.5 3RD GENERATION COMPETITOR 1993 1.0 0.5 0 0 HIGH SPEED SERIES 0.1 0.2 2ND GENERATION MOTOROLA DEMONSTRATED LOW


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PDF AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference BJT npn motorola power BJT PNP mosfet base induction heat circuit MGW20N60D BJT characteristics BJT isolated Base Drive circuit GATE ASSISTED TURN-OFF THYRISTORS Drive Base BJT
2000 - inverter PURE SINE WAVE schematic diagram

Abstract: PURE SINE WAVE inverter schematic diagram inverter PURE SINE WAVE schematic transistor D401 dc to ac inverter schematic diagram 3 phase sine wave pwm c source code dc motor speed pi control using pwm and opamp motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP Schematic Diagram 3 phase generator brush 3 phase inverter schematic diagram pic ac motor
Text: particular "zero cross window." AN1857 14 MOTOROLA For More Information On This Product, Go to , Freescale Semiconductor, Inc. 16 Order this document by AN1857/D Motorola Semiconductor , Based on the MC68HC908MR32 By: Bill Lucas and Ken Berringer Motorola Microcontroller Division Austin , application note describes such a system based on the Motorola MC68HC908MR32 (MR32) motor control specific , -phase induction motor is presented. © Motorola , Inc., 2000 AN1857 For More Information On This Product


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PDF AN1857/D AN1857 MC68HC908MR32 inverter PURE SINE WAVE schematic diagram PURE SINE WAVE inverter schematic diagram inverter PURE SINE WAVE schematic transistor D401 dc to ac inverter schematic diagram 3 phase sine wave pwm c source code dc motor speed pi control using pwm and opamp motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP Schematic Diagram 3 phase generator brush 3 phase inverter schematic diagram pic ac motor
2001 - 2sC144

Abstract: lc 3101 ST BDW83C BUX98A BU326 BU108 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient , which Minimizes the Spread · Integrated Collector­Emitter Free Wheeling Diode Matched with the Power , . Specifications and information herein are subject to change without notice. Motorola Bipolar Power Transistor , ) 4.7 9.3 2.6 5.4 9.7 18 V IC = 0.5 Adc IB1 = 50 mA VCC = 300 V 6.4 12.3 DIODE CHARACTERISTICS Forward


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PDF MJE18604D2 MJE18604D2 Spr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sC144 lc 3101 ST BDW83C BUX98A BU326 BU108 BU100
2001 - BU108

Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient , Antisaturation Network Easy to Use Thanks to the Integrated Collector/Emitter Diode POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS The MOTOROLA "Sig Sixma" philosophy provides tight and reproductible , to change without notice. 3­712 Motorola Bipolar Power Transistor Device Data


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PDF MJE18002D2 MJE18002D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
2001 - bu806 REPLACEMENT

Abstract: BU108 k 3569 2SD211 BU326 2SC1419 2SC1943 TL MJE2955T NSP2100 BU806
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Power Transistor This Darlington , Voltage: VCE(sat) = 1.5 V (max) · Packaged in JEDEC TO­220AB · Damper Diode VF is specified. VF = 2.0 V , Collector Current - Continuous - Peak Emitter­Collector Diode Current Base Current IB 2.0 Total Device , Seconds 275 REV 1 Motorola Bipolar Power Transistor Device Data 3­249 , ) VCE(sat) VBE(sat) VF - - - - - - 1.5 2.4 2.0 Vdc Vdc Vdc Emitter­Collector Diode Forward Voltage


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PDF 220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT BU108 k 3569 2SD211 BU326 2SC1419 2SC1943 TL MJE2955T NSP2100 BU806
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