The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LTC1177CSW Linear Technology IC BUF OR INV BASED MOSFET DRIVER, PDSO18, 0.300 INCH, PLASTIC, SO-18, MOSFET Driver
LTC4444-5IMS8E#PBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver

mosfet bs250 equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - mosfet bs250

Abstract:
Text: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part , -0.12 BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18 FEATURES D D D D D BENEFITS , -23) Device Marking Front View 1 G "S" TP 0610L xxll 3 BS250 VP0610L "S" VP 0610L xxll , View TP0610T VP0610T BS250 "S" = Siliconix Logo xxll = Date Code ABSOLUTE MAXIMUM RATINGS (TA , BS250 Drain-Source Voltage VDS -60 -60 -60 -60 -45 Gate-Source Voltage VGS


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PDF TP0610L/T, VP0610L/T, BS250 TP0610L TP0610T VP0610L VP0610T O-226AA mosfet bs250 BS250 VP0610T BS250 datasheet equivalent of BS250 AN804 part marking for tp0610t TP0610L TP0610T VP0610L
2009 - mosfet bs250

Abstract:
Text: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part , -0.12 BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18 FEATURES D D D D D BENEFITS , -23) Device Marking Front View 1 G "S" TP 0610L xxll 3 BS250 VP0610L "S" VP 0610L xxll , View TP0610T VP0610T BS250 "S" = Siliconix Logo xxll = Date Code ABSOLUTE MAXIMUM RATINGS (TA , BS250 Drain-Source Voltage VDS -60 -60 -60 -60 -45 Gate-Source Voltage VGS


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PDF TP0610L/T, VP0610L/T, BS250 TP0610L TP0610T VP0610L VP0610T O-226AA mosfet bs250 BS250 VP0610T BS250 mosfet bs250 siliconix VP0610L TP0610T TP0610L 0610L AN804
mosfet cross reference

Abstract:
Text: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 2N6661 IRFF111 VN2210N2 VN0606L TN2106N3-G ZVN0545A VN0550N3-G , BS250 VP2106N3-G IRFS123 TN2510N8-G VN1206L VN1206L-G ZVN3320A TN5325N3-G BS250F


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PDF 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS ZVNL110A cross reference equivalent of BS250 vn10km cross
2004 - equivalent of BS250

Abstract:
Text: Output Low Voltage (VOL) (TTL) output. This means having an equivalent resistance (REQ) greater than 1.5 , equivalent device. 8.2.2 Discrete Components Based Solution An other way to manage the external reset is to , ) or an equivalent device. 9.2.2 Discrete Components Based Solution An other way to manage the RGB , inputs. A simple example of a video filter based on MOSFET transistors is shown in Figure 9. 10/14 , BS250 FB External BS170 R External R Chroma G External G Chroma B External B


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PDF AN1862 ST92X195 ST92x195. equivalent of BS250 equivalent of BS170 mosfet bs250 equivalent EQUIVALENT FOR bs170 CHINA TV MEMORY RESET AN1862 BS170 SMD 9221 ST RGB filter mosfet bs250
1998 - Zener Diode 3v 400mW

Abstract:
Text: switching applications, by using MOSFET bootstrap techniques, they can be used for high-side load control , MOSFET BSN10 Applications


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PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec BC108 transistor
1998 - mosfet cross reference

Abstract:
Text: MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low , . Enhancement Mode MOSFET Arrays N-Channel Plastic DIP (N6, J) Ceramic DIP (N7, NC, P) Device , Mode MOSFET Arrays P-Channel Plastic DIP (N6, J) Ceramic DIP (N7, P) Channels/ Types1 , . 3. For push pull operation, use with VN2222NC quad MOSFET array. 6-7 12-18 Selector Guides , 15 375V · · 10-5 High Voltage Level Translators and MOSFET Drivers The Supertex


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PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
2012 - aslk pro kit

Abstract:
Text: , BS250  81 A.6.1 2N3906 Features, A.6.2 Download Datasheet 81 A.6.3 2N3904 Features, A.6.4 Download Datasheet 81 A.6.5 BS250 Features, A.6.6 Download Datasheet A , Response of Circuit for Digital Controlled Gain Stage Amplifier 68 Equivalent Circuit for , 48 A.8 BS250 P-Channel Enh. Mode Vertical DMOS FET 81 8.2 Input-Output , .14 MOSFET socket 97 D.15 Bipolar Junction Transistor socket 97 D.16 Diode sockets


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1999 - mosfet equivalent

Abstract:
Text: DEPLETION EDGE n- 40 VOLTS n+ DRAIN FIGURE 1. CROSS-SECTION VIEW OF MOSFET SHOWING EQUIVALENT MOS , accounts for the dual nature. Buried in today's power MOSFET devices is the equivalent of a depletion layer , CURRENT FORCING FUNCTION IDEALIZED POWER MOSFET WAVEFORMS RO Equivalent Circuit v(t) -VG , Transconductance - Drain Load Resistance IG - Constant Current Amplitude POWER MOSFET EQUIVALENT CIRCUIT , FIGURE A-1. POWER MOSFET EQUIVALENT CIRCUIT State 1: Mos Off, JFET Off 101 As before, both


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2006 - electrolytic capacitor filter

Abstract:
Text: modulation (PWM), current-mode, step-up converter controller. It drives an external n-channel MOSFET to , equivalent series inductance of COUT, can be found by solving the following equation: I I VOUT LOAD , output capacitor and loads while the MOSFET is off. The average diode current is the load current, I , RCOMP = The power MOSFET must be chosen based on threshold voltage (VT), on resistance (RDSON), maximum voltage and current ratings, and gate charge. The RMS current through the MOSFET is given by the


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PDF EVAL-ADP1621 ADP1621 SSA33L CDRH104R-2R5NC MSS1038-252NL GRM31CR60J476M GRM32DR71C106KA01 VJ0603Y104MXQ GRM188R61A105K electrolytic capacitor filter GRM31CR60J476M RB10 mosfet equivalent M400 IRF7470 equivalent IRF7470 equivalent smd mosfet CRCW0603150
2006 - trkp l s z2

Abstract:
Text: Evaluation Board Schematic and Layout . 12 MOSFET Selection , of the high-side MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage , the output capacitors is greater than the following current: For the low-side (synchronous) MOSFET , the MOSFET total gate charge. The high-side (switching) MOSFET has to be able to handle conduction loss and switching loss. The high-side MOSFET switching loss is approximated by the equation PT =


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PDF EVAL-ADP1822 ADP1822 ADP1822 ADP1822-EVAL EB06388-0-11/06 trkp l s z2 J3DH GRM32NR61A226KE19 trkp l s BZX84C5V6 BAT54 GRM188R61E105KA12 IRFR3709Z#PBF IRFR3711Z
2004 - ccfl driver schematic

Abstract:
Text: full bridge topology using the STS3C3F30L that integrates a complementary pair of power MOSFET , integrates a complementary pair of power MOSFET transistors. Such devices are manufactured considering the , complementary pair of power MOSFET transistors integrated into STS3C3F30L are: 1) Vsd 30 V (P-channel); 2 , external resistor and capacitor. Such frequency will be also the switching frequency of the power MOSFET , generates the four outputs of the driver that are connected to the gates of the power MOSFET transistors


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PDF AN1899 STS3C3F30L STS3C3F30L ccfl driver schematic schematic diagram dc-ac sine wave inverter 12v to 220v step up transformer Power INVERTER schematic circuit schematic diagram dc-ac inverter 12v schematic of fluorescent lamps 12v to 220v inverter schematic diagram inverter 12v 220v schematic diagram schematic diagram dc-ac inverter inductive load 40 ccfl driver schematic
1999 - 3s0680rf

Abstract:
Text: Vi IDS ID1 ICR + VDS - CR D1 Figure 3. Equivalent Circuit at MOSFET Turn-Off , . At turn-off, the snubber capacitor much larger that the MOSFET output equivalent capacitor (Coss , , the MOSFET turns on and current ßows. The equivalent circuit in this interval is shown above. Input , that combined the control IC and the MOSFET , both used in the switching mode power supply, into one , the equipped MOSFET . The 5 types in the KA3S series, 800V (6A, 8A) and 650V (7A, 9A, 12A), developed


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PDF AN4102 3s0680rf 3s0680rf DIAGRAM 3S0680R 3s0680rf circuit diagram eer3543 3S0680R B 220v ac to 5v dc 100w smps 3S0680 full bridge smps resonance snubber diode d2sb series
2002 - jfet cascode

Abstract:
Text: accounts for the dual nature. Buried in today's power MOSFET devices is the equivalent of a depletion layer , n- 40 VOLTS n+ DRAIN FIGURE 1. CROSS-SECTION VIEW OF MOSFET SHOWING EQUIVALENT MOS , FORCING FUNCTION IDEALIZED POWER MOSFET WAVEFORMS RO Equivalent Circuit v(t) -VG The , MOSFET EQUIVALENT CIRCUIT State 1: MOS Off, JFET Off In a power-MOSFET device, no drain current will , Capacitance POWER MOSFET EQUIVALENT CIRCUIT State 1: Mos Off, JFET Off 101 As before, both current


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2001 - jfet cascode

Abstract:
Text: . STEP CURRENT FORCING FUNCTION IDEALIZED POWER MOSFET WAVEFORMS RO Equivalent Circuit v(t , . POWER MOSFET EQUIVALENT CIRCUIT State 1: MOS Off, JFET Off In a power-MOSFET device, no drain , - Constant Current Amplitude FIGURE A-1. POWER MOSFET EQUIVALENT CIRCUIT State 1: Mos Off , Power MOSFET Switching Waveforms: A New Insight Application Note [ /Title (AN72 60) /Subject (Power MOSFET Switch ing Waveforms: A New Insight ) /Autho r () /Keywords (Intersil


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2004 - step down transformer 30v schematic

Abstract:
Text: full bridge topology using the STS3C3F30L that integrates a complementary pair of power MOSFET , integrates a complementary pair of power MOSFET transistors. Such devices are manufactured considering the , complementary pair of power MOSFET transistors integrated into STS3C3F30L are: 1) Vsd 30 V (P-channel); 2 , external resistor and capacitor. Such frequency will be also the switching frequency of the power MOSFET , generates the four outputs of the driver that are connected to the gates of the power MOSFET transistors


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PDF AN1899 STS3C3F30L STS3C3F30L step down transformer 30v schematic ccfl driver schematic schematic diagram dc-ac inverter inductive load schematic 12v to 220v inverter 12v to 220v step up transformer 12v to 220v inverter schematic diagram inverter 12v 220v schematic diagram power MOSFET INVERTER 220v 12vdc INVERTER TRANSFORMER 101 full bridge inverter
2000 - BUZ MOSFET

Abstract:
Text: [ /PageMode /UseOutlines /DOCVIEW pdfmark Ordering Nomenclature Guide POWER MOSFET PRODUCTS BUZ TYPES BUZ XXX EQUIVALENT EUROPEAN PART NUMBER PART TYPE EITHER 2 OR 3 DIGITS HP, HRF TYPES HP or HRF XXXX T INTERSIL PREFIX TAPE AND REEL DESIGNATOR EQUIVALENT COMPETITIVE PART , of Intersil Corporation IRF TYPES IR XX XXX EQUIVALENT IR PART PACKAGE DESIGNATION: FA , XX X XX XXX DEVICE TYPE RF: Standard MOSFET RL: Current Limited MOSFET PACKAGE


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PDF O-263, O-252, OT-223 O-252 O-220 TS-001 O-220) O-247 BUZ MOSFET power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 mosfet p-channel 10A irf TO-205A IRF MOSFET driver TS-001-5 irf n-channel TO-252 MOSFET
2006 - kamaya resistors

Abstract:
Text: X7R ceramic capacitors (0603) TDK C1608X7R1H103K or equivalent 2 10µF ±20%, 25V X5R ceramic capacitors (1210) Taiyo Yuden TMK325BJ106MM or equivalent C16 1 3 1µF ±10%, 25V X7R ceramic capacitors (1206) TDK C3216X7R1E105K or equivalent 27pF ±5%, 50V C0G ceramic capacitor (0402) TDK C1005C0G1H270K or equivalent C17 1 2 47µF ±20%, 6.3V X5R ceramic capacitors (1812) Taiyo Yuden JMK432BJ476MM or equivalent 2200pF ±10%, 50V X7R ceramic capacitor (0402) TDK C1005X7R1H222K or equivalent


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PDF MAX8538 600kHz. 600kHz 28-Pin MAX8538 kamaya resistors TDK 0402 1uF 25V capacitor 14K 510 mosfet RC snubber MOSFET SNUBBER MAX8538EVKIT JMK432BJ476MM C3216X7R1E105K C1608X7R1H103K
1994 - HIP4081 amplifier circuit diagram class D

Abstract:
Text: it to the equivalent gate-source capacitance of the MOSFET . After this initial "dump" of charge, the , equal to the equivalent MOSFET gate capacitance is used, the upper bias supply (labeled "bootstrap , the equivalent MOSFET gatesource capacitance is usually sufficient. Provided that sufficient time , , flyback diodes must be placed around the loads to protect the MOSFET switches. GND Many , HIP4081A. Two identical sub-circuits within the IC delay the commutation of the power MOSFET gate turn-on


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PDF AN9405 HIP4081A, HIP4081A HIP408X HIP408X 10VDC 80VDC HIP4080A/81A HIP4081 amplifier circuit diagram class D irf520 mosfet power mosfet ic 12 volts for audio amplifier application note gate driver with bootstrap capacitor CD4069 stepper motor hip4081 50 amp H-bridge Mosfet IRF520R
2015 - mosfet equivalent

Abstract:
Text: manufacturers for semiconductor switches (IGBT, MOSFET , Thyristor, driver) and diodes on Si and SiC , H-bridge / MOSFET or high-speed IGBT / Low inductive design / High switching frequency / Clip-in PCB mounting Part-No Comments V23990-P622-F74-PM 600 30 90 MOSFET fsw< 400 kHz improved , < 100 kHz V23990-P628-F64-PM 900 26 120 MOSFET CoolMOS™ fsw < 400 kHz , V23990-P629-F44-PM 1200 25 IGBT2 Q NEW Facts / High efficient H-bridge / MOSFET or high-speed IGBT


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difference between IGBT and MOSFET IN inverter

Abstract:
Text: propose an in-circuit comparison with equivalent MOSFET solution. N- N+ x The continuous , coefficient for conduction voltage drop is smaller than equivalent voltage rated MOSFET devices, leading to , A New SMPS Non Punch Thru IGBT Replaces MOSFET in SMPS High Frequency Application Richard , applications. This paper shows the feature of this device in a critic al comparison with equivalent products , IGBT seems to meet this requirement providing higher or equivalent current capabilities with smaller


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PDF IRG4PC50W, IRGP50B60WD1 IRFPS40N60K AN-941 difference between IGBT and MOSFET IN inverter 2kw pfc smps igbt IRG4PC50W EQUIVALENT 2kw mosfet AN-941 48V SMPS smps 1500 w design IGBT 600V 5A cost 48V SMPS circuit
6E10

Abstract:
Text: the driver output resistance and the MOSFET 's internal effective gate equivalent series resistance (ESR) Rg. The Analysis Figure 1 shows the LS MOSFET in the off state and its equivalent circuit , limiting the shoot-through or cross conduction current. Through mathematical analysis, MOSFET designers , Right MOSFET Shoot-through can be understood by examining the factors that control the induced , situation is encountered in the synchronous buck topology during the time interval when the top MOSFET is


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PDF AN-7019 AN00007019 6E10 12V19 4E-08 4e08 6E-08 AN-7019
2006 - 180uf 200 v capacitor

Abstract:
Text: to an external EVALUATION BOARD INPUT CAPACITOR INPUT TERMINAL HIGH-SIDE MOSFET OUTPUT INDUCTOR LOW-SIDE MOSFET OUTPUT CAPACITOR OUTPUT CAPACITOR (MLCC) OUTPUT TERMINAL 06360-017 , . RDSON_LOW is the conduction resistor of the low-side MOSFET . IL is the output current. IL is the output , MOSFET causes a negative voltage to appear on its drain, Generally, KCR can be set at 20% to 40%. Thus, the inductance of L can be set at 0.63 H to 1.2 H. where I is the instantaneous MOSFET current and


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PDF EVAL-ADP1821 ADP1821 VJ0603Y223KXXA VJ0603Y104MXQ VJ0603Y2R2KXXA VJ0603Y102KXXA VJ0603Y182KXXA VJ0603Y180KXXA BZX84C5V6 180uf 200 v capacitor 680uF 4v CRCW06033001F M200 IRFR3711Z capacitor 180uf 200 v BZX84C5V6 BAT54 VJ0603Y102KXXA
1997 - static characteristics of mosfet and igbt

Abstract:
Text: equivalent circuits and ON-resistance for both power MOSFET and IGBT. As can be seen from the semiconductor , ) Output Characteristic Curve Range ID = f (VDS) for the MOSFET d) Electrical Equivalent Circuit for the MOSFET e) Output Characteristic Curve Range ID = f (VDS) for the IGBT f) Electrical Equivalent Circuit , bipolar transistor (assuming the same chip dimensions), a power MOSFET with a reverse voltage of VDS = , development of the conductivity-modulated MOSFET (IGBT), the BIMOS switch, and the MOS-GTO. The IGBT The


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1997 - 6013CBZ

Abstract:
Text: MBR1535CT or equivalent . Q1 - Intersil MOSFET ; RFP25N05. FIGURE 11. DC-DC CONVERTER APPLICATION CIRCUIT , FN4325.1 Features · Drives N-Channel MOSFET The HIP6013 provides complete control and protection , drive an N-Channel MOSFET in a standard buck topology. The HIP6013 integrates all of the control , inhibiting PWM operation. The HIP6013 monitors the current by using the rDS(ON) of the upper MOSFET which , Current Sensing Element - Uses MOSFET 's rDS(on) · Small Converter Size - Constant Frequency Operation


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PDF HIP6013 FN4325 HIP6013 6013CBZ 43251 593D HIP6013CB HIP6013CBZ
936a diode

Abstract:
Text: Cdv/dt induced turn-on of the synchronous MOSFET deteriorates performance in synchronous buck , Figure 1(b), by replacing the n freewheeling diode with a MOSFET , the standard buck regulator is , buck circuit. Typically a Schottky diode is paralleled with MOSFET Q2 but is omitted from this paper , buck regulator waveforms are illustrated in Figure 2(a). The control MOSFET Q1 is used to regulate , continues to flow through either the synchronous MOSFET Q2 or its body diode. Figure 2. (a) Ideal


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PDF IRF7805/IRF7807 936a diode
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