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Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IN Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1336CN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver

mosfet 4800 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1262-33

Abstract: IXTP44N10T IXTP98N075T IXTQ130N10T ixtp76n075 IXTA60N10T IXTH200N10T IXTP64N055T IXTP152N085T IXTP240N055T
Text: 3040 3040 3040 4800 4800 4800 4800 4800 6600 6600 6600 6600 6600 6600 6900 6900 6900 , IXYS unique Trench MOSFET technology to provide extremely low power dissipation with ultra-low Rds(on , >>> Power MOSFET Discretes RF Power MOSFETs IGBT Discretes IGBT Modules Ultra Fast Rectifiers Silicon , D R I V E R S MOSFET and IGBT Gate Drivers Half Bridge Gate Drivers PWM Controllers FUNCTIONAL , 3040 3040 3040 4800 4800 4800 4800 4800 6600 6600 6600 6600 6600 6600 6900 6900 6900


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PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTP98N075T IXTQ130N10T ixtp76n075 IXTA60N10T IXTH200N10T IXTP64N055T IXTP152N085T IXTP240N055T
mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 20N60 mosfet 7n80 4500 MOS 4800 mosfet mosfet 4800 circuit
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFETTM Power MOSFETs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating , applications. This new class of Power MOSFET uses IXYS' HDMOS II process which im proves the ruggedness of the , high voltage diodes and is tailored to minimize power dissipation and stress in the MOSFET . HDMOS II , MOSFET . It also features enhancements to the MOSFET cell design which significantly improve dv/dt


OCR Scan
PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 20N60 mosfet 7n80 4500 MOS 4800 mosfet mosfet 4800 circuit
4800 8pin mosfet

Abstract: AC-DC Controllers DIH-143 DIH-137 DIH-136 DIH-135 DIH-134 DIH-129 DIH-128 DIH-126
Text: : DIONICS Power MOSFET Photovoltaic Relays are State-of- the-Art solid state relays designed for numerous , continuous currents, depending upon the model number, from 1.0, up to 19.0 amps. All relays feature MOSFET , turn on the MOSFETs and cause the relay to conduct. The MOSFET outputs provide thermal stability , . (2)* 19.00 48.00 + 200 0.08 5000 150 No 6-Pin Package DC Wiring Config. (3 , 150 150 No 8-Pin SIP DIH-139 DC N/O SPST 19.00 48.00 + 200 0.10 5000 150


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PDF MIL-R-28750 DIH-1378 DIH-1380 DIH-126 DIH-127 DIH-128 DIH-129 DIH-136 DIH-149 DIH-169 4800 8pin mosfet AC-DC Controllers DIH-143 DIH-137 DIH-136 DIH-135 DIH-134 DIH-129 DIH-128 DIH-126
mosfet 4800

Abstract: ltp70n06 4800 mosfet 4800 power mosfet mosfet 4800 circuit LTP70N
Text: LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide , . Starting Tj=25, ID=30A, VDD=37.5V Rev.1, Nov. 2010 01 LTP70N06 N-Channel 60V Power MOSFET , 25 4620 VDS=25V, VGS=0V, 4800 pF 300 f=1MHz 100 32 150 22 RL=0.5 250 , Test Condition Integral reverse PN diode in The A V MOSFET IS=70A , VGS = 0V Note , Power MOSFET Typical Characteristics (TJ =25 Noted) Rev.1, Nov. 2010 03 LTP70N06 N-Channel


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PDF LTP70N06 mosfet 4800 ltp70n06 4800 mosfet 4800 power mosfet mosfet 4800 circuit LTP70N
2013 - SJ 76 A DIODE EMI

Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features • Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6643TRPbF


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PDF IRF6643TRPbF SJ 76 A DIODE EMI
2013 - Not Available

Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features ï‚·ï€ Latest MOSFET silicon , ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques , make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier , Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute Maximum Ratings VGS ID @


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PDF IRF6641TRPbF
TO220 Semiconductor Packaging

Abstract: MOSFET HIGH VOLTAGE mosfet 4800 2SK2642-01MR 2SK208 4800 mosfet
Text: C o l l m e r Semiconductor MOS-FET , High Voltage Diodes N-Channel Silicon Power MOS-FET cF-I Series = Low RDS(ON) cF-III Series = Logic Level, High gfs cFAP-IIA = Reduced Turn Off Time cF-II Series = VGS ±30 V, Reduced Turn Off Time cFAP-III = Logic Level, High Avalanche Ruggedness cFAP-IIIBH = , 0.006 9000 1250 250 285 TO3P 2SK3216-01 FAP-IIIBH 100 45.0 80 — 0.026 4800 1140 186 240 TO220 2SK3217-01MR FAP-IIIBH 100 50.0 70 — 0.025 4800 1140 230 265 TO-220F15 2SK3218-01 FAP-IIIBH 150 35.0 80 — 0.048


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PDF 2SJ314-01L 2SJ314-01S ESJC30-08 CS57-04A CS54-08A CS52-12A CS52-14A CS56-24 TO220 Semiconductor Packaging MOSFET HIGH VOLTAGE mosfet 4800 2SK2642-01MR 2SK208 4800 mosfet
2013 - Not Available

Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute


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PDF IRF6641TRPbF
7F MARKING

Abstract: APM4800 J-STD-020A ANPEC
Text: Information S N-Channel MOSFET APM 4800 P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e , APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 · 30V/8A , RDS(ON)=15m(typ.) @ VGS=10V RDS(ON)=22m(typ.) @ VGS=4.5V · S · · 2 7 D 3 6 D G Reliable and Rugged D S Low RDS(ON) 8 S Super High Dense Cell Design for , d lin g C o d e Tem p. R ange P ackage C ode APM 4800 K : APM 4800 XXXXX X X X X X - D a


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PDF APM4800 7F MARKING APM4800 J-STD-020A ANPEC
2010 - mosfet 4800

Abstract: Dual N-Channel MOSFET dual mosfet 3X3 package esd protect mosfet 4800 mosfet n-channel mosfet transistor TSM7900D tdFN PACKAGE thermal resistance
Text: TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition: 1. Source 1 2 , N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit , 5 sec. 1/6 Version: B07 TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected Electrical , ) - 3700 4800 - 2000 2600 Dynamic b Total Gate Charge Gate-Source Charge , Version: B07 TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta


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PDF TSM7900D TSM7900DCQ mosfet 4800 Dual N-Channel MOSFET dual mosfet 3X3 package esd protect mosfet 4800 mosfet n-channel mosfet transistor TSM7900D tdFN PACKAGE thermal resistance
2007 - 4800 power mosfet

Abstract: TSM7900D
Text: TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY VDS (V) RDS(on , MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit , Version: A07 TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected Electrical Specifications Parameter , 3700 4800 - 2000 2600 pF c Switching Turn-On Delay Time Turn-On Rise Time , TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless


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PDF TSM7900D TSM7900DCQ 4800 power mosfet TSM7900D
2014 - Not Available

Abstract: No abstract text available
Text: TSM090N08PQ56 75V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1 , total Br + Cl) and <1000ppm antimony compounds. N-Channel MOSFET Absolute Maximum Ratings (Tc , 62 o C/W C/W Version: A14 TSM090N08PQ56 75V N-Channel MOSFET Electrical , - Ciss - 4800 - Coss - 650 - Crss - 340 - td(on) - , N-Channel MOSFET Electrical Characteristics Curves Output Characteristics Gate Threshold Voltage


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PDF TSM090N08PQ56 PDFN56 TSM090N08PQ56 900ppm 1500ppm 1000ppm
2008 - 4800 N-channel mosfet

Abstract: MOSFET TSSOP-8 dual n-channel esd protect mosfet mosfet 4800 4800 mosfet MOSFET TSSOP-8 TSM6968SD TSM6968SDCA y parameter of mosfet
Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on , TSSOP-8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless , N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter , 135 - td(on) - 140 200 tr - 210 250 td(off) - 3700 4800 , TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless


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PDF TSM6968SD TSM6968SDCA 4800 N-channel mosfet MOSFET TSSOP-8 dual n-channel esd protect mosfet mosfet 4800 4800 mosfet MOSFET TSSOP-8 TSM6968SD y parameter of mosfet
2008 - Not Available

Abstract: No abstract text available
Text: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) SOT , Process Technology ● High Density Cell Design for Ultra Low On-resistance Dual N-Channel MOSFET , sec. 1/6 Version: B07 TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected Electrical , ) - 3700 4800 - 2000 2600 Dynamic b Total Gate Charge Gate-Source Charge , . 2/6 nS Version: B07 TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected Electrical


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PDF TSM6988D OT-26 TSM6988DCX6
2008 - mosfet 4800

Abstract: esd protect mosfet p channel mosfet 10a 20v 12v 10A mosfet 4800 mosfet FULLY PROTECTED MOSFET n-channel mosfet transistor P channel MOSFET 10A 4800 power mosfet
Text: TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY Pin Definition: 1 , Halogen Free Packing N-Channel MOSFET 3Kpcs / 7" Reel 3Kpcs / 7" Reel 10Kpcs / 13" Reel 10Kpcs , : D08 TSM802 20V N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless , 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 Dynamic b , independent of operating temperature. 2/6 nS Version: D08 TSM802 20V N-Channel MOSFET w/ESD


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PDF TSM802 TSM802CQ mosfet 4800 esd protect mosfet p channel mosfet 10a 20v 12v 10A mosfet 4800 mosfet FULLY PROTECTED MOSFET n-channel mosfet transistor P channel MOSFET 10A 4800 power mosfet
Not Available

Abstract: No abstract text available
Text: TSM7401 20V N-Channel MOSFET w/ESD Protected SOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m , € Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter , : C07 TSM7401 20V N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless , 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 Dynamic , MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output


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PDF TSM7401 TSM7401CS
2007 - mosfet 4800

Abstract: TSM7401CS 27BSC TSM7401 TSM7401CSRL
Text: TSM7401 20V N-Channel MOSFET w/ESD Protected SOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m , " Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter , : C07 TSM7401 20V N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless , 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 Dynamic , independent of operating temperature. 2/6 nS Version: C07 TSM7401 20V N-Channel MOSFET w/ESD


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PDF TSM7401 TSM7401CS mosfet 4800 27BSC TSM7401 TSM7401CSRL
2007 - TSM6988D

Abstract: N-Channel mosfet sot-26
Text: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS (V) RDS(on)(m) SOT , Process Technology High Density Cell Design for Ultra Low On-resistance Dual N-Channel MOSFET , Dual N-Channel MOSFET w/ESD Protected Electrical Specifications Parameter Conditions Symbol , ) - 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 , N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted


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PDF TSM6988D OT-26 TSM6988DCX6 TSM6988D N-Channel mosfet sot-26
Not Available

Abstract: No abstract text available
Text: TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY Pin Definition: 1 , for Halogen Free Packing N-Channel MOSFET 3Kpcs / 7” Reel 3Kpcs / 7” Reel 10Kpcs / 13â , @ ID=10A / VGS=10V 1/6 Version: D08 TSM802 20V N-Channel MOSFET w/ESD Protected Electrical , ) - 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 , essentially independent of operating temperature. 2/6 nS Version: D08 TSM802 20V N-Channel MOSFET


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PDF TSM802 TSM802CQ
2007 - FULLY PROTECTED MOSFET

Abstract: MOSFET TSSOP-8 dual n-channel 4800 power mosfet mosfet 4800 TSM6968SD TSM6968SDCA Dual N-Channel MOSFET 4800 mosfet
Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on , TSSOP-8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless , N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter , 135 - td(on) - 140 200 tr - 210 250 td(off) - 3700 4800 , TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless


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PDF TSM6968SD TSM6968SDCA FULLY PROTECTED MOSFET MOSFET TSSOP-8 dual n-channel 4800 power mosfet mosfet 4800 TSM6968SD Dual N-Channel MOSFET 4800 mosfet
Not Available

Abstract: No abstract text available
Text: TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on , TSSOP-8 3Kpcs / 13” Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless , N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter , 3700 4800 - 2000 2600 Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain , Version: E07 TSM6968SD 20V Dual N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta


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PDF TSM6968SD TSM6968SDCA
2008 - diode D07-15

Abstract: 4800 N-channel mosfet mosfet 4800 MOSFET TSSOP-8 dual n-channel esd protect mosfet 4800 mosfet MOSFET TSSOP-8 FULLY PROTECTED MOSFET TSM6968D TSM6968DCA
Text: TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on , -8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted , on FR4 Board, t 5 sec. 1/6 Version: D07 TSM6968D 20V Dual N-Channel MOSFET w/ESD , ) - 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 , N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted


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PDF TSM6968D TSM6968DCA diode D07-15 4800 N-channel mosfet mosfet 4800 MOSFET TSSOP-8 dual n-channel esd protect mosfet 4800 mosfet MOSFET TSSOP-8 FULLY PROTECTED MOSFET TSM6968D
2007 - Not Available

Abstract: No abstract text available
Text: TSM3460 20V N-Channel MOSFET w/ESD Protected SOT-26 PRODUCT SUMMARY VDS (V) RDS(on)(mÎ , € Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter , Version: B07 TSM3460 20V N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless , tr - 210 250 td(off) - 3700 4800 - 2000 2600 Dynamic b , independent of operating temperature. 2/6 nS Version: B07 TSM3460 20V N-Channel MOSFET w/ESD


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PDF TSM3460 OT-26 TSM3460CX6
2007 - 4800 power mosfet

Abstract: TSM6968D TSM6968DCA 4800 mosfet mosfet 4800
Text: TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on , -8 3Kpcs / 13" Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted , FR4 Board, t 5 sec. 1/6 Version: B07 TSM6968D 20V Dual N-Channel MOSFET w/ESD Protected , 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 Dynamic , independent of operating temperature. 2/6 nS Version: B07 TSM6968D 20V Dual N-Channel MOSFET w


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PDF TSM6968D TSM6968DCA 4800 power mosfet TSM6968D 4800 mosfet mosfet 4800
2008 - 4800 mosfet

Abstract: esd protect mosfet sot 26 Dual N-Channel MOSFET f 0472 N-Channel MOSFET TSM6988D mosfet 4800
Text: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS (V) RDS(on)(m) SOT , No. Package Packing TSM6988DCX6 RF SOT-26 3Kpcs / 7" Reel Dual N-Channel MOSFET , Version: B07 TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected Electrical Specifications Parameter , ) - 140 200 tr - 210 250 td(off) - 3700 4800 - 2000 2600 , N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted


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PDF TSM6988D OT-26 TSM6988DCX6 4800 mosfet esd protect mosfet sot 26 Dual N-Channel MOSFET f 0472 N-Channel MOSFET TSM6988D mosfet 4800
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