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Part Manufacturer Description Datasheet Download Buy Part
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver

mosfet 4800 circuit Datasheets Context Search

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mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 20N60 mosfet 7n80 4500 MOS 4800 mosfet mosfet 4800 circuit
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFETTM Power MOSFETs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating , applications. This new class of Power MOSFET uses IXYS' HDMOS II process which im proves the ruggedness of the , high voltage diodes and is tailored to minimize power dissipation and stress in the MOSFET . HDMOS II , MOSFET . It also features enhancements to the MOSFET cell design which significantly improve dv/dt


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PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 20N60 mosfet 7n80 4500 MOS 4800 mosfet mosfet 4800 circuit
1262-33

Abstract: IXTP44N10T IXTP98N075T IXTQ130N10T ixtp76n075 IXTA60N10T IXTH200N10T IXTP64N055T IXTP152N085T IXTP240N055T
Text: . The DCB can be patterned like a printed circuit board, which enables the unique integration , 3040 3040 3040 4800 4800 4800 4800 4800 6600 6600 6600 6600 6600 6600 6900 6900 6900 , IXYS unique Trench MOSFET technology to provide extremely low power dissipation with ultra-low Rds(on , >>> Power MOSFET Discretes RF Power MOSFETs IGBT Discretes IGBT Modules Ultra Fast Rectifiers Silicon , D R I V E R S MOSFET and IGBT Gate Drivers Half Bridge Gate Drivers PWM Controllers FUNCTIONAL


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PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTP98N075T IXTQ130N10T ixtp76n075 IXTA60N10T IXTH200N10T IXTP64N055T IXTP152N085T IXTP240N055T
4800 8pin mosfet

Abstract: AC-DC Controllers DIH-143 DIH-137 DIH-136 DIH-135 DIH-134 DIH-129 DIH-128 DIH-126
Text: : DIONICS Power MOSFET Photovoltaic Relays are State-of- the-Art solid state relays designed for numerous , continuous currents, depending upon the model number, from 1.0, up to 19.0 amps. All relays feature MOSFET , turn-off circuit . The photovoltaic diode array is a series-connected group of photo sensitive diodes which , , which then responds with a self-generated open circuit voltage, Voc, proportio nal to the LED input , turn on the MOSFETs and cause the relay to conduct. The MOSFET outputs provide thermal stability


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PDF MIL-R-28750 DIH-1378 DIH-1380 DIH-126 DIH-127 DIH-128 DIH-129 DIH-136 DIH-149 DIH-169 4800 8pin mosfet AC-DC Controllers DIH-143 DIH-137 DIH-136 DIH-135 DIH-134 DIH-129 DIH-128 DIH-126
2013 - SJ 76 A DIODE EMI

Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features • Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6643TRPbF


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PDF IRF6643TRPbF SJ 76 A DIODE EMI
2013 - Not Available

Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features ï‚·ï€ Latest MOSFET silicon , ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques , make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier , Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute Maximum Ratings VGS ID @


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PDF IRF6641TRPbF
mosfet 4800

Abstract: ltp70n06 4800 mosfet 4800 power mosfet mosfet 4800 circuit LTP70N
Text: N-Channel 60V Power MOSFET Test Circuit and Waveform Rev.1, Nov. 2010 05 LTP70N06 N-Channel 60V , LTP70N06 N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide , . Starting Tj=25, ID=30A, VDD=37.5V Rev.1, Nov. 2010 01 LTP70N06 N-Channel 60V Power MOSFET , 25 4620 VDS=25V, VGS=0V, 4800 pF 300 f=1MHz 100 32 150 22 RL=0.5 250 , Test Condition Integral reverse PN diode in The A V MOSFET IS=70A , VGS = 0V Note


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PDF LTP70N06 mosfet 4800 ltp70n06 4800 mosfet 4800 power mosfet mosfet 4800 circuit LTP70N
2013 - Not Available

Abstract: No abstract text available
Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon , Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area , . These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D , Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6641TRPbF Absolute


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PDF IRF6641TRPbF
2005 - irf6603tr1

Abstract: mosfet 4800 IRF6603
Text: PD - 94364F IRF6603 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) 30V , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current , A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse , Fig 14a. Switching Time Test Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10


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PDF 94364F IRF6603 IRF6603 irf6603tr1 mosfet 4800
2005 - Not Available

Abstract: No abstract text available
Text: Compatible l Compatible with existing Surface Mount Techniques l HEXFET® Power MOSFET VDSS , MT Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the , ––– 26 39 nC 2 Ù MOSFET symbol A D G TJ = 25°C, IF = 9.6A di/dt = , 20V + V - DD IAS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS , < 1µs Duty Factor < 0.1% 50KΩ 12V .2µF Fig 14a. Switching Time Test Circuit .3µF


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PDF 94365C IRF6604 IRF6604
2005 - Not Available

Abstract: No abstract text available
Text: PD - 94364F IRF6603 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) 30V , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current , Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG BOTTOM , Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID Current Sampling


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PDF 94364F IRF6603 IRF6603
2004 - IRF6603

Abstract: IRF6603TR1
Text: PD - 94364E IRF6603 HEXFET® Power MOSFET VDSS Application Specific MOSFETs l Ideal , Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Charge ­­­ 60 90 nC 2 Ã MOSFET symbol A D G S e TJ = 25°C, IF = 20A , Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ , . Switching Time Test Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID VGS


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PDF 94364E IRF6603 IRF6603 IRF6603TR1
2004 - IRF6602

Abstract: IRF6602TR1
Text: PD-94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 77 nC 2 Ã Conditions MOSFET symbol A D showing the integral reverse G S , Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ , Pulse Width < 1µs Duty Factor < 0.1% 50K 12V .2µF Fig 14a. Switching Time Test Circuit


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PDF PD-94363C IRF6602/IRF6602TR1 IRF6602 IRF6602TR1
2004 - Not Available

Abstract: No abstract text available
Text: PD - 94366E IRF6601/IRF6601TR1 HEXFET® Power MOSFET l l l l l l l VDSS RDS(on , MT Description The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the , junction diode. TJ = 25°C, IS = 21A, VGS = 0V A ––– Conditions MOSFET symbol ––â , Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS VGS 20V , Factor < 0.1% 50KΩ 12V .2µF Fig 14a. Switching Time Test Circuit .3µF D.U.T. + V


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PDF 94366E IRF6601/IRF6601TR1 IRF6601
2005 - IRF6601TR1

Abstract: mosfet 4800 IRF6601
Text: PD - 94366F IRF6601/IRF6601TR1 HEXFET® Power MOSFET l l l l l l l VDSS RDS(on , Description The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , MOSFET symbol ­­­ 0.83 V Reverse Recovery Time ­­­ 60 90 ns Reverse Recovery , . Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS , Duty Factor < 0.1% 50K 12V .2µF Fig 14a. Switching Time Test Circuit .3µF D.U.T. +


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PDF 94366F IRF6601/IRF6601TR1 IRF6601 IRF6601TR1 mosfet 4800
2005 - MQ 132

Abstract: IRF6602 IRF6602TR1 mosfet 4800
Text: PD - 94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 77 nC 2 Ã Conditions MOSFET symbol A D showing the integral reverse G S , 200 A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single , 12V .2µF Fig 14a. Switching Time Test Circuit .3µF D.U.T. + V - DS VDS 90


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PDF 94363C IRF6602/IRF6602TR1 IRF6602 MQ 132 IRF6602TR1 mosfet 4800
2005 - Not Available

Abstract: No abstract text available
Text: PD - 94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET VDSS l Application Specific MOSFETs l , combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to , 380 1.2 62 77 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ã S p-n , . Unclamped Inductive Test Circuit 50 V(BR)DSS tp 0 25 50 75 100 125 150 Starting Tj, Junction , Duty Factor < 0.1% 50K 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS 90


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PDF 94363C IRF6602/IRF6602TR1 IRF6602
2005 - IRF6604

Abstract: IRF6604TR1
Text: Compatible l Compatible with existing Surface Mount Techniques l HEXFET® Power MOSFET VDSS , Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Conditions MOSFET symbol A V ns nC D showing the integral reverse G S p-n junction , Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG BOTTOM DRIVER L , . VGS Pulse Width < 1µs Duty Factor < 0.1% 50K 12V .2µF Fig 14a. Switching Time Test Circuit


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PDF 94365E IRF6604 IRF6604 IRF6604TR1
2004 - 24v 12v 20A regulator

Abstract: IRF6607 IRF6607TR1
Text: PD - 94574B IRF6607 HEXFET® Power MOSFET l VDSS RDS(on) max Qg(typ.) l , Description The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , Charge ­­­ 54 81 nC 2 Ã Conditions MOSFET symbol A V D showing the , Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ , Time Test Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID VGS


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PDF 94574B IRF6607 IRF6607 24v 12v 20A regulator IRF6607TR1
2005 - mosfet 4800 circuit

Abstract: No abstract text available
Text: existing Surface Mount Techniques l IRF6603 Qg(typ.) 48nC PD - 94364F Power MOSFET VDSS 30V , combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to , MOSFET symbol showing the integral reverse G S D Ã p-n junction diode. TJ = 25°C, IS = 20A, VGS = , . Unclamped Inductive Test Circuit V(BR)DSS tp 40 20 0 25 50 75 100 125 150 Starting Tj, Junction , < 1µs Duty Factor < 0.1% 50K 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS


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PDF IRF6603 94364F IRF6603 20-Jun-2012 mosfet 4800 circuit
2005 - DirectFET

Abstract: marking code V6 73 DIODE
Text: 94365E Power MOSFET 11.5m@VGS = 7.0V 13m@VGS = 4.5V MQ Applicable DirectFET Outline and , IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , 92 1.2 47 39 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ã S p-n , Test Circuit V(BR)DSS tp 20 0 25 50 75 100 125 150 Starting Tj, Junction Temperature ( ° C , < 0.1% 50K 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS 90% VDS


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PDF IRF6604 94365E IRF6604 20-Jun-2012 DirectFET marking code V6 73 DIODE
2005 - AN-1035

Abstract: No abstract text available
Text: IRF6601/IRF6601TR1 l l l l l l l PD - 94366F HEXFET® Power MOSFET Application Specific , The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , MOSFET symbol showing the integral reverse G S D Ã p-n junction diode. TJ = 25°C, IS = 21A, VGS = , Test Circuit 40 V(BR)DSS tp 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C , % 50K 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS 90% VDS VGS 3mA


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PDF IRF6601/IRF6601TR1 94366F IRF6601 AN-1035
2011 - Not Available

Abstract: No abstract text available
Text: PD - 96332B IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical , MC Description The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon , Form Quantity Tape and Reel 4800 Tape and Reel 1000 Absolute Maximum Ratings Max , €“ ––– -1.2 V ––– ––– 43 62 65 93 ns nC A Conditions MOSFET , Test Circuit Qgd Qgs2 Qgs1 Fig 15b. Gate Charge Waveform V(BR)DSS tp 15V DRIVER L


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PDF 96332B IRF9395MPbF IRF9395MTRPbF
2007 - IRF6616

Abstract: IRF6616TR1
Text: PD - 96100 IRF6616PbF IRF6616TRPbF DirectFET Power MOSFET RoHS compliant containing no , MP Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the , Conditions A MOSFET symbol showing the 1.0 V integral reverse p-n junction diode. TJ = 25 , Current Sampling Resistors Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform V(BR , 0.01 Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit LD


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PDF IRF6616PbF IRF6616TRPbF IRF6616 IRF6616TR1
2013 - Not Available

Abstract: No abstract text available
Text: IRL6297SDPbF DirectFET® Dual N-Channel Power MOSFET ‚ Typical values (unless otherwise , MC Description The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon , Package Type IRL6297SDPbF DirectFET Small Can Standard Pack Form Quantity Tape and Reel 4800 , R G = 2.0 Ω See Fig.17 VGS = 0V VDS = 10V ƒ = 1.0MHz Conditions MOSFET symbol 25 A , VCC DUT 0 20K 1K Vgs(th) S Qgodr Fig 15a. Gate Charge Test Circuit Qgd


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PDF IRL6297SDPbF J-STD-020Dâ
irf9395

Abstract: No abstract text available
Text: PD - 96332A IRF9395MPbF IRF9395MTRPbF DirectFET™ dual P-Channel Power MOSFET ‚ Typical , MC Description The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon , Pack Form Quantity Tape and Reel 4800 Tape and Reel 1000 Absolute Maximum Ratings Max , Conditions MOSFET symbol D showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = , 15a. Gate Charge Test Circuit Qgd Qgs2 Qgs1 Fig 15b. Gate Charge Waveform V(BR)DSS tp


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PDF 6332A IRF9395MPbF IRF9395MTRPbF irf9395
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