The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver

mosfet 1200V 40A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - 95A sensor hall

Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
Text: 1200V Control voltage Input R 4-30VDC 12-30VDC 5-30VDC I2t Protec. Dimensions mm , 600V 1200V Control voltage 4-30VDC 5-30VDC Input R Dimensions mm I2t 312A2s 312A2s , 24-510VAC 24-510VAC 24-510VAC 24-510VAC 24-510VAC Peak voltage 600V 600V 1200V 1200V 1200V 1200V 1200V Control voltage Control current 3-32VDC 3-32VDC 3,5-32VDC 3,5-32VDC 3 , 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V 1200V 1200V 1200V 1200V 1200V 1200V


Original
PDF
2014 - Not Available

Abstract: No abstract text available
Text: Silicon Carbide Power MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB Product Overview , 1200V isolation in a small package outline • High blocking voltage with low RDS(on) • Reduction of heat sink requirements • High current 40A • High temperature 210 C O • RoHS , MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB Electrical Characteristics Symbols V(BR)DSS y r , =210oC IDSS 1.3 VDS= 1200V , VGS=0V, TJ=25oC 0.8 100 VDS= 1200V , VGS=0V, TJ=210oC 10 450


Original
PDF MYXMN1200-40CAB
IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: MTK MODULES 3 1200V 100.000A MTK MODULES 3 1200V 100.000A MTK MODULES 3 1600V 100.000A MTK MODULES , Phase Bridge in a INT-A-Pak package 3 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1400V 3 Phase Bridge in a , 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 , 110A Schottky Common Cathode Diode in a D6120 8-SM package 3 1200V 3 Phase Bridge in a INT-A-Pak


Original
PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
2012 - "VDSS 800V" 40A mosfet

Abstract: APTMC120AM20CT1AG mosfet 1200V 40A 800V 40A mosfet mosfet 40a 200v SiC POWER MOSFET Microsemi MOSFET 1200V
Text: APTMC120AM20CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 20m max @ Tj = 25°C ID = , Tj = 25°C IF = 40A Tj = 175°C IF = 40A , VR = 1200V di/dt = 1000A/µs f = 1MHz, VR = 200V f = 1MHz, VR , Power Supplies · Motor control Features · SiC Power MOSFET - Low RDS(on) - High temperature performance , together All ratings @ Tj = 25°C unless otherwise specified 1. SiC MOSFET characteristics (Per MOSFET , Junction to Case Thermal Resistance Test Conditions VGS = 0V , VDS = 1200V Tj = 25°C VGS = 20V ID = 100A Tj


Original
PDF APTMC120AM20CT1AG "VDSS 800V" 40A mosfet APTMC120AM20CT1AG mosfet 1200V 40A 800V 40A mosfet mosfet 40a 200v SiC POWER MOSFET Microsemi MOSFET 1200V
2013 - Not Available

Abstract: No abstract text available
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS(on) - High temperature performance • • • • • • SiC , specified Q1 to Q4 Absolute maximum ratings (per SiC MOSFET ) IDM VGS RDSon PD Continuous Drain , Symbol VDSS APTMC60TLM55CT3AG Q1 to Q4 Electrical Characteristics (per SiC MOSFET ) Symbol


Original
PDF APTMC60TLM55CT3AG
APTMC120AM55CT1AG

Abstract: 800V 40A mosfet
Text: APTMC120AM55CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 55m max @ Tj = 25°C ID = , Power Supplies · Motor control Features · SiC Power MOSFET - Low RDS(on) - High temperature performance , together All ratings @ Tj = 25°C unless otherwise specified 1. SiC MOSFET characteristics (Per MOSFET , Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 1200V Min Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C VGS = 20V ID = 40A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V Test Conditions VGS =


Original
PDF APTMC120AM55CT1AG APTMC120AM55CT1AG 800V 40A mosfet
2010 - 10-FZ06NBA075SA-P916L33

Abstract: No abstract text available
Text: V23990-P629-F68-PM 1200V 2x 120mΩ 2x 40A Symmetric Booster (IGBT) • Semikron Equivalent CoolMOSTM , Excellent performance for 1200V applications Dual Booster (IGBT) flowBOOST 0: Different applications , symmetric boosters equipped with MOSFET or IGBT switches. The table below lists the power modules we have , -FZ06NBA075SA-P916L33 2x 600V 75A IGBT3 • 600V devices are used to provide 1200V total voltage capability at increased speed and with reduced losses Power Modules Dual Booster ( MOSFET ) All booster modules


Original
PDF V23990-P621-F68-PM V23990-P629-F68-PM 10-FZ06NBA075SA-P916L33
2012 - 800V 40A mosfet

Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55m @ Tj = 25°C Application · Uninterruptible Power Supplies Features · SiC Power MOSFET - Low , °C unless otherwise specified Q1 to Q4 Absolute maximum ratings (per SiC MOSFET ) Tc = 25°C Tc = 80 , APTMC60TLM55CT3AG Q1 to Q4 Electrical Characteristics (per SiC MOSFET ) Symbol Characteristic IDSS RDS(on) VGS(th , Leakage Current Test Conditions VGS = 0V VDS = 1200V Min Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150


Original
PDF APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
mosfet 1200V 40A

Abstract: mosfet 1200V 1200v mosfet powerex power Modules fuji semiconductor catalog
Text: converter Boost converter IGBT Device Ratings: · · Voltage - 600V or 1200V Current - up to 200A MOSFET Device Ratings: · · Voltage-60V to 1200V Current - up to 300A at 60V; up to 40A at 1200V Power Device , SENSITRON SEMICONDUCTOR 1998 · SHORT FORM CATALOG - Revision INDUSTRIAL IGBT / MOSFET POWER MODULES Introducing Sensitron's new line of industrial power modules ! · · · · Sensitron is capable of providing power modules that satisfies all electrical / mechanical requirements Sensitron is capable of


OCR Scan
PDF
mosfet 1200V 40A

Abstract: Silicon MOSFET 1000V IGBT Transistor 1200V, 25A mosfet 1500v pnp 1000V 2A igbt testing MOSFET 1200v 3a 125OC pnp 1200V 2A IXFH12N100
Text: MOSFET DC Parameters BVDSS @ 3mA 1600V 1200V 1000V VGE(th) @ 4mA 5-9V 4-8V , 1000V MOSFET (IXFH12N100) and a 1200V DMOS constructed, SCSOA rated IGBT (IXSH35N120A), all three parts , 1200V IGBT and 1000V MOSFET . - , ) MOSFET , IXYS coined the acronym BiMOSFETTM to distinguish this new class of switches. Rated at 1600V, its RDS(on) is less than 10% of an equivalent voltage rated MOSFET yet it has a switching time of


Original
PDF IXBH40N160 IXBH40N160, 200ns. mosfet 1200V 40A Silicon MOSFET 1000V IGBT Transistor 1200V, 25A mosfet 1500v pnp 1000V 2A igbt testing MOSFET 1200v 3a 125OC pnp 1200V 2A IXFH12N100
2014 - Not Available

Abstract: No abstract text available
Text: VR= 1200V DC Forward Current Tc = 125°C VF Diode Forward Voltage IF = 40A Tj = 25 , Reverse Leakage Current 128 224 40 1.6 2.3 IF = 40A , VR = 1200V di/dt =1600A/µs µA A , APTMC120AM25CT3AG VDSS = 1200V RDSon = 25mΩ max @ Tj = 25°C ID = 105A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET - High speed


Original
PDF APTMC120AM25CT3AG
IXAN0016

Abstract: pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet 35N120A mosfet 1500v MOSFET 1200v 3a mosfet 1000v Silicon MOSFET 1000V mosfet 1200V 40A
Text: 1200V IGBT and 1000V MOSFET . IXAN0016 - , very low RDS(on) MOSFET , IXYS coined the acronym BiMOSFETTM to distinguish this new class of switches. Rated at 1600V, its RDS(on) is less than 10% of an equivalent voltage rated MOSFET yet it has a , . IXYS has developed a new 40A , 1600V, homogeneous base IGBT to fulfill this need for a faster and , grown on top of a large, low resistivity silicon substrate. However, at voltages in excess of 1200V


Original
PDF IXAN0016 IXBH40N160 IXBH40N160, 200ns. IXAN0016 pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet 35N120A mosfet 1500v MOSFET 1200v 3a mosfet 1000v Silicon MOSFET 1000V mosfet 1200V 40A
2012 - 800V 40A mosfet

Abstract: mosfet 1200V 40A
Text: Total Capacitance Junction to Case Thermal Resistance IF = 40A Test Conditions VR= 1200V Tj = 25°C Tj = , Unit V µA A V nC pF °C/W APT100MC120JCU2 ­ Rev 0 November, 2012 IF = 40A , VR = 1200V di/dt =1000A , APT100MC120JCU2 ISOTOP® Boost chopper SiC MOSFET + SiC chopper diode Power module K VDSS = 1200V RDSon = 20m max @ Tj = 25°C ID = 102A @ Tc = 25°C Application · AC and DC motor control · Switched Mode Power Supplies · Power Factor Correction · Brake switch Features · SiC Power MOSFET Low RDS


Original
PDF APT100MC120JCU2 OT-227) 800V 40A mosfet mosfet 1200V 40A
2000 - mosfet 1200V 40A

Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTP20N60A4 HGTD3N60A4S HGTG11N120CND MOSFET 1200v 30a HGTD7N60B3S HGTD7N60A4S
Text: Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through (NPT). Solutions , www.intersil.com/igbt - HGTG20N60C3 - 15 ~ 40A With Intersil IGBTs you won't be faced with the , MOSFET solutions are no longer needed when you can design-in the efficiency of an IGBT. - , available. - HGTG40N60C3 HGT1Y40N60C3D* On the reverse side, you'll find 1200V IGBT Selection , requirements. You provide the challenges, we'll provide the solutions. 1200V IGBT SELECTION GUIDE PACKAGE


Original
PDF LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTP20N60A4 HGTD3N60A4S HGTG11N120CND MOSFET 1200v 30a HGTD7N60B3S HGTD7N60A4S
2013 - Not Available

Abstract: No abstract text available
Text: APTMC120AM55CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 49mΩ max @ Tj = 25 , ; VDS = 1200V Tj = 25°C VGS = 20V ID = 40A Tj = 150°C VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V , €¢ Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET - Low RDS(on) - High , °C unless otherwise specified 1. SiC MOSFET characteristics (Per MOSFET ) Absolute maximum ratings IDM , = 0V VDS = 1000V f = 1MHz Min Typ 1900 160 13 98 VGS= 20V VBus = 800V ID = 40A


Original
PDF APTMC120AM55CT1AG
Not Available

Abstract: No abstract text available
Text: €. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av ) 25A V rrm 1200V trr (typ , 600V to 1200V . TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require , highly decrease power losses in any associated switching IGBT or MOSFET in all “Freewheel Modeâ , diodes. Packaged in ISOTOP®, this 1200V device is particularly intended for use on 3 phase 400V , Peak forward voltage Min Tj = 25°C If =25A, dlp/dt = 200 AJfis If = 40A , dlF/dt = 500 A/jis


OCR Scan
PDF STTA5012T
2014 - Not Available

Abstract: No abstract text available
Text: Current 70 130 40 1.5 2.2 IF = 40A , VR = 1200V di/dt =1000A/µs µA A 1.8 3 186 f , APTMC120TAM17CTPAG VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 147A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET - High , • Low profile • RoHS Compliant APTMC120TAM17CTPAG Absolute maximum ratings (per SiC MOSFET


Original
PDF APTMC120TAM17CTPAG
2008 - tyco igbt module 25A

Abstract: 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
Text: covers a broad power spectrum, ranging from 5A to 450A at 600V and 1200V . Vincotech Fast Power Modules are available in 2 different standard housings for up to 100A at 600V and 1200V and are suitable for switching frequencies of up to 400kHz at 600V and 50kHz at 1200V . fastPACK 0 H 2nd gen W W , ) V23990-P629-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V 30A , ) V23990-P729-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V P723-P729 Current


Original
PDF Vincotech-012-0508 ISO9001 TS16949 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
2013 - Not Available

Abstract: No abstract text available
Text: APTMC120AM20CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 17mΩ max @ Tj = 25 , °C IF = 40A Tj = 175°C IF = 40A , VR = 1200V di/dt = 1000A/µs A 1.8 3 260 f = 1MHz, VR = , €¢ Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET - Low RDS(on) - High , °C unless otherwise specified 1. SiC MOSFET characteristics (Per MOSFET ) IDM VGS RDSon PD Tc = 25 , Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V , VDS = 1200V Tj = 25Â


Original
PDF APTMC120AM20CT1AG
1995 - mosfet 1200V 40A

Abstract: ir igbt 1200V 40A STTA1212D igbt high frequency 1200V morocco p3 transistor IGBT trr TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE STTA12
Text: PRODUCT CHARACTERISTICS 12A VRRM 1200V trr (typ) ns VF (max) V K A IF(AV , performance series of ultra-fast high voltage power diodes from 600V to 1200V . TURBOSWITCH 1200V , any associated switching IGBT or MOSFET in all "Freewheel Mode" operations. They are particularly , 1200V device is particularly intended for use on 3 phase 400V industrial mains. ABSOLUTE MAXIMUM , /µs IF = 40A , dIF/dt = 500 A/µs 2/6 ® Min Typ Max Unit ns TBD V TBD TBD


Original
PDF STTA1212D O220AC mosfet 1200V 40A ir igbt 1200V 40A STTA1212D igbt high frequency 1200V morocco p3 transistor IGBT trr TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE STTA12
mosfet 1200V 25A

Abstract: No abstract text available
Text: CHARACTERISTICS I f(av ) V rrm trr (typ) Vf (max) 25A 1200V 60ns 1.9V PRELIMINARY DATA FEATURES AND BENEFITS , TURBOSW ITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V . TURBOSW ITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast , decrease power losses in any associated switching IGBT or MOSFET in all ''Freewheel ABSOLUTE MAXIMUM , the secondary of SMPS as high voltage rectifier diodes. Packaged in SOD93, this 1200V device is


OCR Scan
PDF
2008 - Solid State Relays

Abstract: gunther relay. 3700 WG A8 6D 03 Z TRIAC 20A 600V WG A5 6D 25
Text: 280 2280 : thyristor 600V 420 : thyristor 800V 480 : thyristor 1200V 660 : thyristor 1600V A4 6 , A8 10 : high commutation triac 1000V A8 12 : alternistor 1200V A0 12 : thyristor 1200V A3 12 : thyristor 1200V A3 16 : thyristor 1600V A0 16 : thyristor 1600V B B WG 19.2 (0.76) 4.0 , 12Dxx : 48 - 480 WG A0 16Dxx : 48 - 660 Output Input General Data Heatsink 1 SSR 40Â °C Vdc , drop max. Vdc WG K1/100 10A 14A 16A 10A WG K2/100 10A 17A 20A 10A Heatsink 1 SSR 40Â °C WG K3/160


Original
PDF K3/160 K2/100 Solid State Relays gunther relay. 3700 WG A8 6D 03 Z TRIAC 20A 600V WG A5 6D 25
1995 - morocco p3

Abstract: mosfet 1200V 40A IGBT Transistor 1200V, 25A mosfet 1200V 25A TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE transistor P1 P 12 transistor marking p3 IGBT Transistor 2.5a TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE STTA2512P
Text: PRODUCT CHARACTERISTICS 25A VRRM 1200V trr (typ) 60ns VF (max) 1.9V K A IF(AV , performance series of ultra-fast high voltage power diodes from 600V to 1200V . TURBOSWITCH 1200V , any associated switching IGBT or MOSFET in all "Freewheel Mode" operations. They are particularly , 1200V device is particularly intended for use on 3 phase 400V industrial mains. ABSOLUTE MAXIMUM , = 40A , dIF/dt = 500 A/µs 2/6 ® Min Typ Max Unit ns TBD V TBD TBD STTA2512P


Original
PDF STTA2512P morocco p3 mosfet 1200V 40A IGBT Transistor 1200V, 25A mosfet 1200V 25A TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE transistor P1 P 12 transistor marking p3 IGBT Transistor 2.5a TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE STTA2512P
Not Available

Abstract: No abstract text available
Text: V rrm 1200V trr (typ) 65ns V f (max) 1.85V STTA9012T(V)1 STTA9012T(V)2 , performance series of ultra-fast high voltage power diodes from 600V to 1200V . TURBOSWITCH 1200V , any associated switching IGBT or MOSFET in all “Freewheel Mode” operations. They are , ®, this 1200V device is particularly intended for use on 3 phase 400V industrial mains. ABSOLUTE , , 1.1 x VFmax Tj = 25'C If =45A, d lF / d t = 360 A/|is If = 40A , d lF / d t = 500 A/|as


OCR Scan
PDF STTA9012T
Diode SGS-Thomson

Abstract: SGS-Thomson mosfet TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
Text: CHARACTERISTICS I f (a v ) PRELIMINARY DATA 12A 1200V ns V rrm trr (typ) Vf (max) V FEATURES , diodes from 600V to 1200V . TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which , they also highly decrease power losses in any associated switching IGBT or MOSFET in all ''Freewheel , 1200V device is particularly intended for use on 3 phase 400V industrial mains. Parameter Repetitive , /jis If = 40A , dlF/dt = 500 A / j is Min Typ Max Unit ns TBD V TBD TBD Parameter Forward recovery


OCR Scan
PDF
Supplyframe Tracking Pixel