The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC6256ITS8#TRPBF Linear Technology LTC6256 - Dual 6.5MHz, 65µA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC6252CS6#TRPBF Linear Technology LTC6252 - 720MHz, 3.5mA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 6; Temperature Range: 0°C to 70°C
LTC6253ITS8#TRPBF Linear Technology LTC6253 - Dual 720MHz, 3.5mA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC6255CS6#TRPBF Linear Technology LTC6255 - 6.5MHz, 65µA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 6; Temperature Range: 0°C to 70°C
LTC6247HTS8#PBF Linear Technology LTC6247 - Dual 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 8; Temperature Range: -40°C to 125°C
LTC6247ITS8#PBF Linear Technology LTC6247 - Dual 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C

mobile rf power amplifier transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: 8 pin IC 34063 INA-10386 HP RF TRANSISTOR GUIDE 44xx 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM ina series ATF at 2.4 Ghz 305xx AT-320XX
Text: Transmitters Power Amplifier Name Power Amplifier Symbol Function Key Parameters Typical Markets RF up , . 1 Input Protection RF Amplifier Frequency Conversion IF Amplifier Transmitters . 5 Modulator Gain Stages & Driver Power Amplifier T/R Switch AGC Detector Market-to-Part Quick , Cellular & cordless telephones · 900 MHz ISM band Wireless Data RF Tags & RF /ID Wireless modems · Mobile , Wireless Data RF Tags & RF /ID Protects the receiver from damage by high power input signals Loss (dB) -


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PDF 5965-7732E 5968-2348E 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM 8 pin IC 34063 INA-10386 HP RF TRANSISTOR GUIDE 44xx 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM ina series ATF at 2.4 Ghz 305xx AT-320XX
2012 - 4G base station power amplifier

Abstract: No abstract text available
Text: amplifier topology Traditional LDMOS Doherty RF power amplifiers are based on the Class-AB linear mode , more efficient RF power amplifier are favorably compounded because the RF PA is located at the far end , transistor-based RF PA with a broadband Chireix power combiner. NXP is committed to delivering a power amplifier , radio base station transceiver signal chain - the RF power amplifier . Serendipitously, because the RF , Multiplexing OMP Overmolded Plastic PA Power Amplifier PAPR Peak-to-Average Power Ratio RF


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rca 2n3375

Abstract: TA7403 rca power transistor RCA Transistors 2N2876 CD2152 RCA RF POWER TRANSISTOR 40280 40281 RCA TO60 TRANSISTORS
Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave , MHz (typ) —3 dB Bandwidth ■80 dB (typ) AGC range @ 1.75 MHz RF Amplifier RCA-CA3004 $2.25 , = 6 V , VE = - 6 V E ■input offset voltage 1 mV (max) (CA3006) RF Amplifier RCA-CA3028A $ .89 j8 d 0^ DC Amplifier RCA-CA3028B $1.25 (8-|e*d I U-O) ■20 dB (typ) cascode power , $1.25 (d ip ) ■drives audio output transistor directly High-Gain Amplifier / Limiter/Detector


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PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 TA7403 rca power transistor RCA Transistors 2N2876 CD2152 RCA RF POWER TRANSISTOR 40280 40281 RCA TO60 TRANSISTORS
2002 - mobile rf power amplifier transistor

Abstract: DTC TCXO 5.1 channel converter circuit diagram MB15G125 quadrature modulator internal block diagram of mobile phone transistor for RF amplifier and mixer fujitsu power amplifier GHz fujitsu rf power amplifier 49
Text: Pin No. Pin Name I/O Power supply terminal for channel RF . Output terminal for the limiter amplifier . 4 DoRF O VPRF Charge pump power supply terminal for channel RF . 6 GNDDRF , lower power consumption, we will launch new products tailored to the needs of mobile communication , Error Leak Power During Maximum Output Limiter Amplifier RSSI ACP2 -68 dB , Vector Error Leak Power During Maximum Output Limiter Amplifier RSSI ACP2 -68


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PDF MB39A102 23-bit mobile rf power amplifier transistor DTC TCXO 5.1 channel converter circuit diagram MB15G125 quadrature modulator internal block diagram of mobile phone transistor for RF amplifier and mixer fujitsu power amplifier GHz fujitsu rf power amplifier 49
2011 - Not Available

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H4452M1A is a 60-watt RF MOSFET Amplifier Module for , .RA series products ( RF power amplifier modules) and RD series products ( RF power transistors) are designed , .2014 1 PACKAGE CODE: H2M < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance , change without notice. Publication Date :Jan.2014 2 — — < Silicon RF Power Modules


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PDF RA60H4452M1A 440-520MHz RA60H4452M1A 60-watt 520-MHz
Not Available

Abstract: No abstract text available
Text: amplifier and NPN transistor . The differential amplifier output uses an emitter-follower circuit. • RF amplifier The output signal of a grounded emitter circuit is output via an emitter-follower circuit. The RF , . Mixer, IF Amplifier The mixer is an active, double-balanced mixer. The LO and RF outputs can be , power supply and connects to the IF amplifier in the next stage. The IF amplifier consists of a differential amplifier with an emitter-follower output. 2. RF Amplifier The output signal of a


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PDF DS06-70103-1E MB54600 MB546xx 20-pin, FPT-20P-M03) 34-pin,
Challenges and Requirements of Multimode Multiband Power Amplifiers for Mobile Applications

Abstract: No abstract text available
Text: migration, power amplifier module (PAM) solutions for handset and mobile devices are now moving away from , ] N. Schlumpf and et al, “A Fast Modulator for Dynamic Supply Linear RF Power Amplifier ,” IEEE , Challenges and Requirements of Multimode Multiband Power Amplifiers for Mobile Applications Nick , considerations relevant to power amplifier design. understanding of system requirements and architectural , ] Index Terms — Multimode, multiband, MMMB, power amplifiers, PA, PAM, amplification, mobile , handset


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2011 - Not Available

Abstract: No abstract text available
Text: power amplifier modules) and RD series products ( RF power transistors) are designed for consumer mobile , < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5 , < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE , electric wave obstacle for equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER


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PDF RA60H3847M1 378-470MHz RA60H3847M1 60-watt 470-MHz
2011 - RA80H1415M1

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module , .RA series products ( RF power amplifier modules) and RD series products ( RF power transistors) are designed , RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 , :Jun.2013 1 < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W


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PDF RA80H1415M1 144-148MHz 136-174MHz RA80H1415M1 80-watt 148-MHz
2011 - Not Available

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5 , MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in , sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF power , the gate voltages and controlling the output power with the input power . RF Input (Pin) 2


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PDF RA60H3847M1 378-470MHz RA60H3847M1 60-watt 470-MHz
2011 - Not Available

Abstract: No abstract text available
Text: RF Power Modules > RA30H1317M RoHS Compliance , DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The , equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of , , please contact one of our sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF power transistors) are designed for consumer mobile communication terminals and were not


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PDF RA30H1317M RA30H1317M 30-watt 175-MHz
2011 - Not Available

Abstract: No abstract text available
Text: RF Power Modules > RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5 , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF power transistors) are designed for consumer mobile communication terminals and were


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PDF RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz
2011 - Not Available

Abstract: No abstract text available
Text: RF Power Modules > RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF power transistors) are designed for consumer mobile communication terminals and were


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PDF RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz
2011 - 400-470MHz

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5 , < Silicon RF Power Modules > RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE , THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not , of our sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF


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PDF RA60H4047M1 400-470MHz RA60H4047M1 60-watt 470-MHz
2011 - Not Available

Abstract: No abstract text available
Text: RF Power Modules > RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for , RF Power Modules > RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE , THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not , of our sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF


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PDF RA20H8087M 806-870MHz RA20H8087M 20-watt 870-MHz
2011 - Not Available

Abstract: No abstract text available
Text: RF Power Modules > RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF power transistors) are designed for consumer mobile communication terminals and were


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PDF RA20H8994M 896-941MHz RA20H8994M 20-watt 941-MHz
2011 - Not Available

Abstract: No abstract text available
Text: RF Power Modules > RA30H0608M RoHS Compliance , DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to 88-MHz range. The , MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in , sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF power , RF Power Modules > RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE


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PDF RA30H0608M RA30H0608M 30-watt 88-MHz
2011 - Not Available

Abstract: No abstract text available
Text: RF Power Modules > RA30H1721M RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1721M is a 30-watt RF MOSFET Amplifier Module for 12.5 , RF Power Modules > RA30H1721M RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE , MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in , sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF power


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PDF RA30H1721M 175-215MHz RA30H1721M 30-watt 215-MHz
2011 - Not Available

Abstract: No abstract text available
Text: MOBILE RADIO DESCRIPTION The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile , ) RF Power Modules > RA55H3340M RoHS Compliance , 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF power transistors) are designed for consumer mobile communication terminals and were


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PDF RA55H3340M 330-400MHz RA55H3340M 55-watt 400-MHz
2011 - rf power amplifier 400MHz

Abstract: RA45H4047M
Text: RF Power Modules > RA45H4047M RoHS Compliance , 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile , THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not , of our sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF , current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain


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PDF RA45H4047M 400-470MHz RA45H4047M 45-watt 470-MHz rf power amplifier 400MHz
1994 - transistor j326

Abstract: AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors
Text: philosophy and the design of a new generation of RF power transistors which, for Land Mobile products , amplifier design would be extremely difficult. High power RF transistors developed for these applications , Sector. They will be rated at 60 watts output power for application in mobile radio­telephones (12 V , base stations and high power mobiles it is not uncommon for the amplifier output stage to have , power of current 800 MHz transistors does present a number of problems: larger transistor die would


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PDF AN1530/D AN1530 transistor j326 AN1530 TRANSISTOR D 1978 MRF898 uhf amplifier design Transistor Inside the RF Power Transistor broad-band Microwave Class-C Transistor Amplifiers Nippon capacitors
2011 - Not Available

Abstract: No abstract text available
Text: MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile , RF Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE , ) RF Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE , . PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are , , please contact one of our sales offices. 2.RA series products ( RF power amplifier modules) and RD


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PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz
2011 - Not Available

Abstract: No abstract text available
Text: RF Power Modules > RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5 , RF Power Modules > RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE , MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in , sales offices. 2.RA series products ( RF power amplifier modules) and RD series products ( RF power


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PDF RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz
2011 - 13w marking code

Abstract: Code 13w marking code 13W MOSFET Power Amplifier Module 900Mhz rf MARKING "13W"
Text: RF Power Modules > RA13H8891MA RoHS Compliance , DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to 915-MHz range. The , MOBILE RADIO 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage , .RA series products ( RF power amplifier modules) and RD series products ( RF power transistors) are designed , RF Power Modules > RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For


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PDF RA13H8891MA RA13H8891MA 13-watt 915-MHz 13w marking code Code 13w marking code 13W MOSFET Power Amplifier Module 900Mhz rf MARKING "13W"
2011 - Not Available

Abstract: No abstract text available
Text: . For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5 , RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE , < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE , equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications , sheets, please contact one of our sales offices. 2.RA series products ( RF power amplifier modules) and


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PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz
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