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SP160-SM02-T SP160-SM02-T ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±5K Pa to ±40K Pa - Single Tray
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SP110-SM02-M SP110-SM02-M ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±250 Pa to ±2500 Pa - Multi Tray
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SP160-SM02-C SP160-SM02-C ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±5K Pa to ±40K Pa - Cut Tape

mmic AMPLIFIER x-band 10w Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - x-band limiter

Abstract: x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter MA01502D 6 ghz amplifier 10w
Text: RO-P-DS-3002 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 ­12.0 GHz Features 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , Radar Description The MA01502D is a balanced 2-stage low noise amplifier with on-chip, receiver , (Max at Pin= 10W ) IDMAX 40+IDD mA Power Handling (CW up to 30 minutes) PRF 10 W 1. TB = MMIC Base Temperature 20 dBm 13 20 dB 13 20 dB - 2/6


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PDF RO-P-DS-3002 MA01502D MA01502D x-band limiter x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter 6 ghz amplifier 10w
2002 - MMIC X-band amplifier

Abstract: mmic AMPLIFIER x-band 10w x-band power amplifier 6 ghz amplifier 10w MA08509D x-band mmic Gaas Power Amplifier 10W x-Band High Power Amplifier 10W Power Amplifier
Text: V 1.00 MA08509D 10W X-Band Power Amplifier 8.0 ­11.0 GHz Features E E E E 8.0-11.0 GHz GaAs MMIC Amplifier 8.0 to 11.0 GHz Operation 10 Watt CW Saturated Output Power Level , < -30 dBc V1.00 10W X-Band Power Amplifier 2/6 MA08509D Maximum CW Operating , product information. V1.00 10W X-Band Power Amplifier 3/6 MA08509D 50 48 46 44 42 40 , information. V1.00 10W X-Band Power Amplifier 5/6 MA08509D Mechanical Information Chip Size


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PDF MA08509D MA08509D MMIC X-band amplifier mmic AMPLIFIER x-band 10w x-band power amplifier 6 ghz amplifier 10w x-band mmic Gaas Power Amplifier 10W x-Band High Power Amplifier 10W Power Amplifier
2002 - x-band mmic

Abstract: mmic AMPLIFIER x-band 10w x-band power amplifier
Text: RO-P-DS-3006 - A- 10W X-Band Power Amplifier 8.0 ­11.0 GHz MA08509D Features 8.0 , ) Operation Self-Aligned MSAG® MESFET Process 8.0-11.0 GHz GaAs MMIC Amplifier Primary Applications , Maximum 11.0 41.5 Units GHz dBm % dB RO-P-DS-3006 - A- 2/6 10W X-Band Power Amplifier Maximum CW , /6 10W X-Band Power Amplifier 50 48 46 44 42 40 38 36 34 32 30 8 8.5 9 9.5 10 10.5 MA08509D , . RO-P-DS-3006 - A- 4/6 10W X-Band Power Amplifier 40 MA08509D 35 30 25 20 15 10


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PDF RO-P-DS-3006 MA08509D MA08509D x-band mmic mmic AMPLIFIER x-band 10w x-band power amplifier
2002 - x-band limiter

Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
Text: V 1.00 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 ­12.0 GHz Features E E E E 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , Airborne Radar Description The MA01502D is a balanced 2-stage low noise amplifier with on-chip , Current (Max at Pin= 10W ) IDMAX 40+IDD mA Power Handling (CW up to 30 minutes) PRF 10 W 1. TB = MMIC Base Temperature 20 dBm 13 20 dB 13 20 dB V1


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PDF MA01502D MA01502D x-band limiter MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
2002 - x-band limiter

Abstract: x-band mmic LNA x-band MMIC limiter band Limiter MA01503D
Text: RO-P-DS-3003 - - MA01503D X-Band Limiter/Low Noise Amplifier 8.5 ­12.0 GHz Features 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , dBm Drain Current (Max at Pin= 10W ) IDMAX 60+IDD mA Power Handling (CW up to 30 minutes) PRF 10 W 1. TB = MMIC Base Temperature 2/7 RS-O-P-DS-3003 - - X-Band 10W Limiter/ 3 , Radar Description The MA01503D is a balanced 3-stage low noise amplifier with on-chip, receiver


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PDF RO-P-DS-3003 MA01503D MA01503D x-band limiter x-band mmic LNA x-band MMIC limiter band Limiter
2002 - x-band limiter

Abstract: x-band mmic band Limiter MA01503D LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
Text: V 1.00 MA01503D X-Band Limiter/Low Noise Amplifier 8.5 ­12.0 GHz Features 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , dBm Drain Current (Max at Pin= 10W ) IDMAX 60+IDD mA Power Handling (CW up to 30 minutes) PRF 10 W 1. TB = MMIC Base Temperature V1.00 X-Band 10W Limiter/ 3-stage LNA 2/7 , Radar Description The MA01503D is a balanced 3-stage low noise amplifier with on-chip, receiver


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PDF MA01503D MA01503D x-band limiter x-band mmic band Limiter LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
x-band microwave fet

Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: , achieving >10-watts and 40% power-added efficiency. A typical 3-stage HPA (High Power Amplifier ) MMIC , GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP , market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , of the defense market, a number of GaAs MMIC suppliers have exited the defense market. This article , microwave and digital FETS can be fabricated on a single MMIC , with each microwave device independently


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x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: , achieving >10watts with 40% power-added efficiency. A typical 3-stage HPA (High Power Amplifier ) MMIC , MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , layers. Both microwave and digital FETS can be fabricated on a single MMIC , with each microwave device


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2006 - MMIC X-band amplifier

Abstract: No abstract text available
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features     ï , suitable for eutectic attachment. Ordering Information RFHA5966A RFHA5966AS2 X Band 10W High Power Amplifier GaAs MMIC 2-Piece Sample Bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET , performance X-Band Gallium Arsenide Monolithic Amplifier . It has a 41dBm PSAT at 9.5GHz and is well suited


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PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier
2006 - RF Power Amplifier 125KHz

Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Text: RFHA5966AX Band 10W High Power Amplifier GaAs MMIC RFHA5966A X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF Testing 100% Output Power Testing ESCAN , RFHA5966AS2 X Band 10W High Power Amplifier GaAs MMIC 2-Piece Sample Bag Optimum Technology Matching , stage, high efficiency, high performance X-Band Gallium Arsenide Monolithic Amplifier . It has a 41dBm


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PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
2007 - FMA3012

Abstract: 22-A114 x-Band High Power Amplifier x-band mmic
Text: FMA3012 X-BAND 10W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: · · · Advance Product Information v0.1 16.5dB Gain 10W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3012 is a high performance X-Band Gallium Arsenide monolithic amplifier . It is suitable for use in communication, instrumentation and electronic warfare applications. The die is fabricated using the Filtronic 0.5µm process. RF Output VG1


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PDF FMA3012 FMA3012 22-A114. MIL-STD-1686 MILHDBK-263. 22-A114 x-Band High Power Amplifier x-band mmic
2005 - GAAS FET AMPLIFIER x-band 10w

Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added , 1 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Power , GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Power Amplifier Measurements (cont , 3 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Power


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PDF 03-Aug-07 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 XP1006 GAAS FET AMPLIFIER x-band 10w XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006-BD-000V
2005 - P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added , 1 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Power , . ©2008 Mimix Broadband, Inc. Page 2 of 8 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - , MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Power Amplifier Measurements (cont


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PDF 11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
2004 - FMM5061VF

Abstract: x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier , internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF FMM5061VF FMM5061VF x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
2005 - EMM5068VU

Abstract: x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
Text: ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES High Output Power: Pout , =50 Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that , 1 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs , /EMM5068VU Preliminary X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD , Output Pow er [dBm ] 3 31 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT


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PDF ES/EMM5068VU EMM5068VU x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
X-band amplifier

Abstract: 462 008 0004 00 AF
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier , internally matched, for , -111A(C=100pF, R=1.5kΩ) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , [mA] P1dB 36 EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER , -Tone Total Output Pow er [dBm ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN


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PDF EMM5068X EMM5068X X-band amplifier 462 008 0004 00 AF
2006 - EMM5068X

Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier , internally matched, for , -111A(C=100pF, R=1.5k) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD=6V, IDD(DC)=1500m A , ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF EMM5068X EMM5068X X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
2005 - Not Available

Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added , to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - , U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 , to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 -


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PDF 01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 XP1006
directional coupler chip 8 GHz

Abstract: x-band limiter electromagnetic pulse generator x-band mmic lna 5310 MMIC limiter band Limiter circulator monolithic "electromagnetic pulse" electromagnetic pulse
Text: military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are , power limiter/LNA MMIC is shown in Figure 1. Figure 2 shows the photograph of the twostage balanced , the commercially available M/A-COM limiter/LNA MMIC [1]. This limiter/LNA has an operating bandwidth , Limiter Coupler 50- High Power LNA Lange Coupler 50 Single-Ended Amplifier Out , . MA01502D, a commercially available C/X-band integrated LNA/Limiter. MMIC size: 4.6 ×3.1 mm. and they were


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2004 - FMM5061VF

Abstract: FMM5061 x-Band High Power Amplifier ED-4701
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier , internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB 36 FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF FMM5061VF FMM5061VF FMM5061 x-Band High Power Amplifier ED-4701
2005 - XP1006-BD

Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features · X-Band 10W Power Amplifier · 21.0 dB , 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Power Amplifier Measurements (Pulsed Mode F=10 kHz , 8.5-11.0 GHz GaAs MMIC Power Amplifier Power Amplifier Measurements (cont.) Output power (Vd=8V, Vgg =-5V , 8.5-11.0 GHz GaAs MMIC Power Amplifier Mechanical Drawing 4.290 (0.169) 1.354 0.470 (0.053) (0.018) 0.170 , Tech Asia's X-Band, 10-Watt Power Amplifier MMIC " and "Epoxy Die Attach Considerations for HPA MMICs


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PDF XP1006-BD MIL-STD-883 01-Sep-10 XP1006 XP1006-BD X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
2005 - P1006

Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W , =4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large , U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 , accept their obligation to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier , . 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Power Amplifier Measurements


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PDF 01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006-BD
2004 - Not Available

Abstract: No abstract text available
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier , internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , mA dB dB 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT , FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage


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PDF FMM5061VF FMM5061VF
2005 - power transistor gaas x-band

Abstract: mmic AMPLIFIER x-band 10w
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Features X-Band 10W , =4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large , U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Power , accept their obligation to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier , their obligation to be compliant with U.S. Export Laws. 8.5-11.0 GHz GaAs MMIC Power Amplifier June


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PDF 05-Jun-05 P1006 MIL-STD-883 XP1006 power transistor gaas x-band mmic AMPLIFIER x-band 10w
2005 - power transistor gaas x-band

Abstract: x-band transistor
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 30-Sep-05 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added , =4940 Y=4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC power amplifier , without notice. ©2005 Mimix Broadband, Inc. Page 1 of 6 8.5-11.0 GHz GaAs MMIC Power Amplifier , 2 of 6 8.5-11.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 30-Sep-05 P1006 Power


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PDF 30-Sep-05 P1006 MIL-STD-883 XP1006 power transistor gaas x-band x-band transistor
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