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2006 - MGFS45H2201G

Abstract:
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the , MITSUBISHI GaAs devices: The best solution for realizing the information era. Communication networks, such , Multimedia Network WiMAX Features We provide a variety of solutions to e provide variety variety GaAs , providing a variety of GaAs products designed for satellite communication systems to base stations and cellular handset applications. Noise Figure NF (dB) at 12GHz MAP For SELECTION GaAs FET SERIES


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PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio QVC12 mgfc36v-a MGF1907A MGF4961 mgf4941al mitsubishi mgf
1997 - MGF 1200

Abstract:
Text: MITSUBISHI SEMICONDUCTOR < GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER , ELECTRIC (1/16) Aug. '97 MITSUBISHI SEMICONDUCTOR < GaAs MMIC> MGF7170AC Preliminary , ELECTRIC (2/16) Aug. '97 MITSUBISHI SEMICONDUCTOR < GaAs MMIC> MGF7170AC Preliminary , MITSUBISHI SEMICONDUCTOR < GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER , MITSUBISHI SEMICONDUCTOR < GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER


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PDF MGF7170AC MGF7170AC 28dBm 78GHz -46dBc 28dBm 520mA MGF 1200 mitsubishi mgf
1997 - MGF 1200

Abstract:
Text: MITSUBISHI SEMICONDUCTOR < GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POWER AMPLIFIER , mishap. MITSUBISHI ELECTRIC (1/20) Aug. '97 MITSUBISHI SEMICONDUCTOR < GaAs MMIC , MITSUBISHI SEMICONDUCTOR < GaAs MMIC> MGF7169C Preliminary information UHF BAND GaAs POWER AMPLIFIER , ) MITSUBISHI ELECTRIC (6/20) Aug. '97 MITSUBISHI SEMICONDUCTOR < GaAs MMIC> Preliminary information , evaluation Pin (dBm) MITSUBISHI ELECTRIC (7/20) Aug. '97 MITSUBISHI SEMICONDUCTOR < GaAs MMIC


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PDF MGF7169C MGF7169C 28dBm 91GHz -46dBc 28dBm 520mA 1000pF 600um MGF 1200 mitsubishi mgf RF MMIC MARK CODE AS 2SP53 HPA 1200 mitsubishi microwave RF MMIC MARK CODE -03
Not Available

Abstract:
Text: =0.6mm) MITSUBISHI ELECTRIC (3/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , (4/12) M ar/97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER , .'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Pin vs. Pout, Idt, r|t for , UHF BAND GaAs POWER AMPLIFIER Recommended Mount Pad Unit:mm MITSUBISHI ELECTRIC M ar.'97 (11/12) MITSUBISHI SEMICONDUCTOR Preliminary information MGF7168C UHF BAND GaAs


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PDF MGF7168C MGF7168C 33dBm 1785MHz 1910MHz 1250mA 33dBm 1750MHz 150mA
Not Available

Abstract:
Text: MITSUBISHI SEMICONDUCTOR MGF7168C Technical Note UHF BAND GaAs POWER AMPLIFIER , ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , ) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Input , ELECTRIC (4/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , ) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER Pin vs


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PDF MGF7168C MGF7168C 33dBm 1785MHz 1250mA
Not Available

Abstract:
Text: MITSUBISHI SEMICONDUCTOR < GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER , MITSUBISHI SEMICONDUCTOR < GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER , MITSUBISHI SEMICONDUCTOR < GaAs MMIC> MGF7170AC Preliminary information UHF BAND GaAs POWER , ) 12 16 Fin=1750MHz Vg=2.6V CDMA evaluation Aug. '97 MITSUBISHI SEMICONDUCTOR < GaAs MMIC , Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation Aug. '97 MITSUBISHI SEMICONDUCTOR < GaAs MMIC


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PDF MGF7170AC F7170A
2011 - MGF0805A

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX , notice. Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain stage , 2 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - , < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A


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PDF MGF0805A MGF0805A, 400mA MGF0805A MITSUBISHI example s band
2011 - Not Available

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX , :Channel-case Specifications are subject to change without notice. 1 Typ. mA mS < High-power GaAs , DRAWING < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A S-parameters( Ta=25deg.C , VDS=10(V),IDS=400(mA) ) < High-power GaAs FET (small


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PDF MGF0805A MGF0805A, 400mA
2011 - mitsubishi 4a fet

Abstract:
Text: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 ­ , ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more , Publication Date : Apr., 2011 1 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 , =25deg.C Publication Date : Apr., 2011 2 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2


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PDF MGFS52BN2122A MGFS52BN2122A 17GHz mitsubishi 4a fet
2007 - CR10

Abstract:
Text: PRELIMINARY MITSUBISHI SEMICONDUCTOR < GaAs FET> Notice: This is not a final specification , : Channel-case MITSUBISHI ELECTRIC (1/4) Spe. 2007 PRELIMINARY MITSUBISHI SEMICONDUCTOR < GaAs FET , )EVM(%) 13 PRELIMINARY MITSUBISHI SEMICONDUCTOR < GaAs FET> Notice: This is not a final , ELECTRIC (3/4) Sep. 2007 PRELIMINARY MITSUBISHI SEMICONDUCTOR < GaAs FET> Notice: This is not , BAND 50W INTERNALLY MATCHED GaAs FET Requests Regarding Safety Designs Mitsubishi Electric


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PDF MGFC47B3436B MGFC47B3436B 37dBm CR10 GaAs FET 15A
Not Available

Abstract:
Text: MITSUBISHI SEM ICO ND UC TO R < GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POW ER AM , malfunction or mishap. M IT S U B IS H I E L E C T R IC Aug. '97 MITSUBISHI SEM ICO ND UC TO R < GaAs , IS H I E L E C T R IC Aug '97 MITSUBISHI SEM ICO NDUCTO R < GaAs MMIC> Preliminary , Harmonics M IT S U B IS H I E L E C T R IC Aug. '97 MITSUBISHI SEM ICO ND UC TO R < GaAs MMIC , B IS H I E L E C T R IC Aug. '97 MITSUBISHI SEM ICO ND UC TO R < GaAs MMIC> Preliminary


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PDF MGF7169C 600um MGF7169C GF7169C
2011 - Not Available

Abstract:
Text: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 â , breakdown voltage VGSO Mitsubishi Electric Corporation puts the maximum effort into making , :Channel-case 1 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND , band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W Pout , Id


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PDF MGFS52BN2122A MGFS52BN2122A 17GHz
2009 - bt 1696

Abstract:
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched , change without notice. 1 Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR < GaAs FET , PATTERN 2 Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR < GaAs FET> MGF0805A L & , . / 2009 MITSUBISHI SEMICONDUCTOR < GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched , . / 2009 MITSUBISHI SEMICONDUCTOR < GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched


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PDF MGF0805A MGF0805A, bt 1696 transistor z14 smd transistor z15 smd z14 smd Z25 SMD MGF0805A BT 1610 circuit smd z13 fet smd transistor SMD Z27
2011 - Not Available

Abstract:
Text: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use , +175 Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products , :Channel-case 1 < C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W MGFC45B3436B TYPICAL CHARACTERISTICS < C band internally matched power GaAs FET > MGFC45B3436B 3.4 â


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PDF MGFC45B3436B MGFC45B3436B -45dBc 12ohm
1997 - mitsubishi mgf

Abstract:
Text: MITSUBISHI SEMICONDUCTOR MGF7168C Technical Note UHF BAND GaAs POWER AMPLIFIER , ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER , MITSUBISHI ELECTRIC (2/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs , =0.6mm) MITSUBISHI ELECTRIC (3/12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs , /12) Mar.'97 MITSUBISHI SEMICONDUCTOR MGF7168C UHF BAND GaAs POWER AMPLIFIER


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PDF MGF7168C MGF7168C 33dBm 1785MHz 1910MHz 1250mA mitsubishi mgf 33dBm DCS1800 DCS1900 PCS1900
1715G

Abstract:
Text: MITSUBISHI SEMICONDUCTOR < GaAs MMIC> Technical Note Specifications are subject to change , ) MITSUBISHI SEMICONDUCTOR < GaAs MMIC> Preliminary information MGF7170AC UHF BAND G aAs POWER AMPLIFIER , . '97 M ITS U B ISH I ELECTRIC (2/16) MITSUBISHI SEMICONDUCTOR < GaAs MMIC> Preliminary , ELECTRIC (3/16) MITSUBISHI SEMICONDUCTOR < GaAs MMIC> Preliminary information MGF7170AC UHF BAND , =2.6V CDMA evaluation Aug '97 M ITS U B ISH I E LEC TR IC (4/16) MITSUBISHI SEMICONDUCTOR < GaAs MMIC


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PDF MGF7170AC MGF7170A 28dBm -46dB 10sec 1715G 17-15G
2009 - smd z13

Abstract:
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched , MITSUBISHI SEMICONDUCTOR < GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Outline Drawing , MITSUBISHI SEMICONDUCTOR < GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] S-parameters , Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR < GaAs FET> MGF0805A L & S Band GaAs FET , Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR < GaAs FET> MGF0805A L & S Band GaAs FET


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PDF MGF0805A MGF0805A, smd z13 of bt 1696 Z12 SMD
2006 - EVM12

Abstract:
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs , ) Mar. 2006 MITSUBISHI SEMICONDUCTOR < GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY , (2/6) Mar. 2006 ID(A) ID(A) MITSUBISHI SEMICONDUCTOR < GaAs FET> MGFC45B3436B 3.4 - , 0.907 60 MITSUBISHI ELECTRIC (3/6) Mar. 2006 MITSUBISHI SEMICONDUCTOR < GaAs FET , ELECTRIC ( 4 / 6) Mar. 2006 MITSUBISHI SEMICONDUCTOR < GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND


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PDF MGFC45B3436B MGFC45B3436B -45dBc EVM12
2011 - Not Available

Abstract:
Text: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 ­ 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in , 175 -65 to +175 *1 : Tc=25C Mitsubishi Electric Corporation puts the maximum effort into making , < C band internally matched power GaAs FET > MGFC45B3436B 3.4 ­ 3.6 GHz BAND / 30W MGFC45B3436B TYPICAL CHARACTERISTICS Publication Date : Apr., 2011 2 < C band internally matched power GaAs FET


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PDF MGFC45B3436B MGFC45B3436B -45dBc 12ohm
2011 - Not Available

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed , < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL CHARACTERISTICS < High-power GaAs FET (small signal gain stage , < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non -


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PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA
2011 - s band

Abstract:
Text: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 ­ 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 , -20 -10 10 175 -65 to +175 Unit V V W C C *1 : Tc=25C Mitsubishi Electric Corporation puts , GaAs FET > MGFL48V1920 1.9 ­ 2.0 GHz BAND / 60W MGFL45V1920 TYPICAL CHARACTERISTICS Pout , PAE , =25deg.C 2-tone test , f=5MHz Publication Date : Apr., 2011 2 < L/S band internally matched power GaAs


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PDF MGFL48V1920 MGFL48V1920 20ohm s band
2011 - s band

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for , . Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND , ., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD , < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non -


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PDF MGF0952P MGF0952P 15GHz 25dBm 15GHz 700mA s band
2011 - Not Available

Abstract:
Text: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 , circuit designs! Absolute maximum ratings Symbol Mitsubishi Electric Corporation puts the maximum , C/W delta Vf method *2 :Channel-case 1 < L/S band internally matched power GaAs FET , =5MHz < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W


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PDF MGFL48V1920 MGFL48V1920 20ohm
1997 - mgf0911A

Abstract:
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is OUTLINE DRAWING designed for use in UHF band , :Pin=25dBm Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S , VDS(V) Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S , 10.1 9.8 9.4 June/2004 MITSUBISHI SEMICONDUCTOR < GaAs FET> MGF0911A L, S BAND POWER GaAs


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PDF MGF0911A MGF0911A, 41dBm GF-21 June/2004 mgf0911A S 1149 212
2011 - 12W SMD

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for , , limits are subject to change. Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal , CHARACTERISTICS Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage , Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND


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PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA 12W SMD
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